NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1.3 W
•
Tolerance series: approx.
±5%
•
Working voltage range:
nom. 3.6 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
•
Stabilization purposes.
DESCRIPTION
BZV85 series
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx.
±5%
tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
handbook, halfpage
k
a
MAM241
The diodes are type branded.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 10 ms; half sinewave;
T
j
= 25
°C
prior to surge
P
tot
total power dissipation
T
amb
= 25
°C;
lead length 10 mm;
note 1
note 2
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.4
MAX.
1
UNIT
V
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
CONDITIONS
−
see Table
“Per type”
see Table
“Per type”
−
−
−
−65
−
1
1.3
60
+200
200
W
W
W
°C
°C
MIN.
MAX.
500
UNIT
mA
1999 May 11
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 4 mm; see Fig.2
lead length10 mm; note 1
BZV85 series
VALUE
110
175
UNIT
K/W
K/W
handbook, full pagewidth
10
3
MBG929
Rth j-tp
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
0
1
10
−2
tp
T
δ
=
tp
T
10
−1
1
10
10
2
10
3
tp (ms)
10
4
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
1999 May 11
5
GD32 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
