v03.1203
MICROWAVE CORPORATION
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Features
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
8
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Functional Diagram
General Description
The HMC413QS16G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
1.6 and 2.2 GHz. The amplifier is packaged in a
low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external compo-
nents, the amplifier provides 23 dB of gain, +29.5
dBm of saturated power at 42% PAE from a +5.0V
supply voltage. The amplifier can also operate
with a 3.6V supply. Vpd can be used for full power
down or RF output power/current control.
Electrical Specifications,
T
A
= +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Parameter
Frequency
Min.
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 1.7 GHz
1.7 - 2.2 GHz
1.6 - 1.7 GHz
1.7 - 2.2 GHz
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
1.6 - 2.2 GHz
Vpd= 0V/3.6V
Vpd= 3.6V
tON, tOFF
32
33
32
20
21
18
19
18
17
Typ.
21
22
21
20
0.025
10
8
23
24
25.5
26.5
35
36
35
5.5
0.002/220
7
80
36
37
36
23
24
0.035
Max.
Min.
19
20
19
18
Typ.
22
23
22
21
0.025
10
9
26
27
28.5
29.5
39
40
39
5.5
0.002/270
7
80
0.035
Max.
dB
dB
dB
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
mA
ns
Vs= 5.0V
Units
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
8 - 166
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v03.1203
MICROWAVE CORPORATION
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Gain vs. Temperature, Vs= 3.6V
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
Gain vs. Temperature, Vs= 5.0V
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
8
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss, Vs= 3.6V
0
-2
-4
Return Loss, Vs= 5.0V
0
-2
-4
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
S11
S22
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
S11
S22
2.1 2.2 2.3 2.4 2.5
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
P1dB vs. Temperature, Vs= 5.0V
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
P1dB (dBm)
+25 C
+85 C
-40 C
P1dB (dBm)
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 16
AMPLIFIERS - SMT
GAIN (dB)
GAIN (dB)
MICROWAVE CORPORATION
v03.1203
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
8
AMPLIFIERS - SMT
Psat vs. Temperature, Vs= 3.6V
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
Psat vs. Temperature, Vs= 5.0V
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9
Psat (dBm)
+25 C
+85 C
-40 C
Psat (dBm)
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression@ 1.9 GHz, Vs= 3.6V
46
Power Compression@ 1.9 GHz, Vs= 5.0V
46
Pout (dBm), GAIN (dB), PAE (%)
38
34
30
26
22
18
14
10
6
2
-12
-10
-8
Pout (dBm), GAIN (dB), PAE (%)
42
Pout (dBm)
Gain (dB)
PAE (%)
42
38
34
30
26
22
18
14
10
6
Pout (dBm)
Gain (dB)
PAE (%)
-6
-4
-2
0
2
4
6
8
10
2
-12 -10 -8
-6
-4
-2
0
2
4
6
8
10
12 14
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1.3 1.4 1.5 1.6 1.7 1.8 1.9
Output IP3 vs. Temperature, Vs= 5.0V
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1.3 1.4 1.5 1.6 1.7 1.8 1.9
OIP3 (dBm)
+25 C
+85 C
-40 C
OIP3 (dBm)
+25 C
+85 C
-40 C
2
2.1 2.2 2.3 2.4 2.5
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
8 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.1203
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
-10
+25 C
+85 C
-40 C
Power Down Isolation, Vs= 3.6V
0
-10
8
ISOLATION (dB)
ISOLATION (dB)
-20
-30
-40
-50
-60
1.3 1.4 1.5 1.6 1.7 1.8 1.9
-30
-40
-50
-60
-70
1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
2.1 2.2 2.3 2.4 2.5
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V
10
9
8
Noise Figure vs. Temperature, Vs= 5.0V
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
1.5
1.6
1.7
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
7
6
5
4
3
2
1
+25 C
+85 C
-40 C
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
0
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain & Power vs.
Supply Voltage @ 1.9 GHz
30
29
28
27
Gain
Gain, Power & Quiescent Supply
Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
32
30
28
26
24
22
20
P1dB
Psat
26
25
24
23
22
21
20
2.75
3.25
3.75
4.25
4.75
GAIN (dB), P1dB (dBm), Psat (dBm)
34
18
16
14
5.25
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
1.5
Gain
P1dB
Psat
Icq
330
310
290
270
250
230
210
190
170
150
130
110
90
70
50
30
3.5
GAIN (dB)
1.75
2
2.25
2.5
2.75
3
3.25
Vcc SUPPLY VOLTAGE (Vdc)
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 16
AMPLIFIERS - SMT
Icq (mA)
-20
P1dB, Psat (dBm)
MICROWAVE CORPORATION
v03.1203
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd1, Vpd2)
RF Input Power (RFin)(Vs = +5.0 Vdc,
Vpd = +3.6 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+4.0 Vdc
+20 dBm
150 °C
1.56 W
42 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
8 - 170
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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