Datasheet> 器件分类 > 存储> 存储> CAT28F020HI-90

文档预览

CAT28F020HI-90: 产品描述IC 256K X 8 FLASH 12V PROM, 90 ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32, Programmable ROM; 产品类别存储存储; 文件大小116KB，共16页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn; 标准

下载文档详细参数选型对比全文预览

CAT28F020HI-90概述

IC 256K X 8 FLASH 12V PROM, 90 ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32, Programmable ROM

CAT28F020HI-90规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	ON Semiconductor(安森美)
零件包装代码	TSOP
包装说明	TSOP1, TSSOP32,.8,20
针数	32
Reach Compliance Code	unknown
最长访问时间	90 ns
命令用户界面	YES
数据轮询	NO
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G32
JESD-609代码	e3
长度	18.4 mm
内存密度	2097152 bit
内存集成电路类型	FLASH
内存宽度	8
功能数量	1
端子数量	32
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX8
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装等效代码	TSSOP32,.8,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
电源	5 V
编程电压	12 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.0001 A
最大压摆率	0.03 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.75 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	MATTE TIN
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
切换位	NO
类型	NOR TYPE
宽度	8 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

CAT28F020

Licensed Intel

2 Megabit CMOS Flash Memory

second source

FEATURES

Commercial, industrial and automotive

Fast read access time: 90/120 ns

Low power CMOS dissipation:

temperature ranges

Stop timer for program/erase

On-chip address and data latches

JEDEC standard pinouts:

– Active: 30 mA max (CMOS/TTL levels)

– Standby: 1 mA max (TTL levels)

– Standby: 100

A max (CMOS levels)

High speed programming:

– 10

s per byte

– 4 seconds typical chip program

– 32-pin DIP

– 32-pin PLCC

– 32-pin TSOP (8 x 20)

100,000 program/erase cycles

10 year data retention

Electronic signature

0.5 seconds typical chip-erase

12.0V

5% programming and erase voltage

DESCRIPTION

The CAT28F020 is a high speed 256K x 8-bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after-sale

code updates. Electrical erasure of the full memory

contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard

EPROM and E

PROM devices. Programming and

Erase are performed through an operation and verify

algorithm. The instructions are input via the I/O bus,

using a two write cycle scheme. Address and Data are

latched to free the I/O bus and address bus during the

write operation.

The CAT28F020 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, 32-pin PLCC or 32-pin

TSOP packages.

BLOCK DIAGRAM

I/O0–I/O7

I/O BUFFERS

ERASE VOLTAGE

SWITCH

COMMAND

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

DATA

LATCH

SENSE

AMP

ADDRESS LATCH

Y-GATING

Y-DECODER

2,097,152 BIT

MEMORY

ARRAY

5115 FHD F02

A0–A17

X-DECODER

VOLTAGE VERIFY

SWITCH

Characteristics subject to change without notice

Doc. No. MD-1029, Rev. F

CAT28F020HI-90相似产品对比

	CAT28F020HI-90	CAT28F020GI-12	CAT28F020LI-12	CAT28F020HI-12	CAT28F020HRI-12	CAT28F020GI-90	CAT28F020LI-90	CAT28F020HRI-90
描述	IC 256K X 8 FLASH 12V PROM, 90 ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32, Programmable ROM	256KX8 FLASH 12V PROM, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	IC 256K X 8 FLASH 12V PROM, 120 ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM	IC 256K X 8 FLASH 12V PROM, 120 ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32, Programmable ROM	256KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32	256KX8 FLASH 12V PROM, 90ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	256KX8 FLASH 12V PROM, 90ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32	256KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	TSOP	QFJ	DIP	TSOP	TSOP	QFJ	DIP	TSOP
包装说明	TSOP1, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6	DIP,	TSOP1, TSSOP32,.8,20	8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32	QCCJ, LDCC32,.5X.6	DIP,	TSOP1-R, TSSOP32,.8,20
针数	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	compliant	unknown	unknown	compliant
最长访问时间	90 ns	120 ns	120 ns	120 ns	120 ns	90 ns	90 ns	90 ns
JESD-30 代码	R-PDSO-G32	R-PQCC-J32	R-PDIP-T32	R-PDSO-G32	R-PDSO-G32	R-PQCC-J32	R-PDIP-T32	R-PDSO-G32
长度	18.4 mm	13.97 mm	42.03 mm	18.4 mm	18.4 mm	13.97 mm	42.03 mm	18.4 mm
内存密度	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	QCCJ	DIP	TSOP1	TSOP1-R	QCCJ	DIP	TSOP1-R
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	IN-LINE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
编程电压	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	3.55 mm	5.08 mm	1.2 mm	1.2 mm	3.55 mm	5.08 mm	1.2 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V	4.75 V	4.75 V	4.75 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	NO	YES	YES	YES	NO	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	J BEND	THROUGH-HOLE	GULL WING	GULL WING	J BEND	THROUGH-HOLE	GULL WING
端子节距	0.5 mm	1.27 mm	2.54 mm	0.5 mm	0.5 mm	1.27 mm	2.54 mm	0.5 mm
端子位置	DUAL	QUAD	DUAL	DUAL	DUAL	QUAD	DUAL	DUAL
宽度	8 mm	11.43 mm	15.24 mm	8 mm	8 mm	11.43 mm	15.24 mm	8 mm
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	-	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
命令用户界面	YES	YES	-	YES	YES	YES	-	YES
数据轮询	NO	NO	-	NO	NO	NO	-	NO
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles
JESD-609代码	e3	e3	e3	e3	e3	-	e3	e3
封装等效代码	TSSOP32,.8,20	LDCC32,.5X.6	-	TSSOP32,.8,20	TSSOP32,.8,20	LDCC32,.5X.6	-	TSSOP32,.8,20
电源	5 V	5 V	-	5 V	5 V	5 V	-	5 V
最大待机电流	0.0001 A	0.0001 A	-	0.0001 A	0.0001 A	0.0001 A	-	0.0001 A
最大压摆率	0.03 mA	0.03 mA	-	0.03 mA	0.03 mA	0.03 mA	-	0.03 mA
端子面层	MATTE TIN	TIN	TIN	TIN	MATTE TIN	-	TIN	MATTE TIN
切换位	NO	NO	-	NO	NO	NO	-	NO
类型	NOR TYPE	NOR TYPE	-	NOR TYPE	NOR TYPE	NOR TYPE	-	NOR TYPE
Base Number Matches	1	1	1	1	1	1	1	-
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-

CAT28F020HI-90

CAT28F020HI-90概述

CAT28F020HI-90规格参数

文档预览

CAT28F020HI-90相似产品对比

推荐资源