MICROWAVE CORPORATION
v01.0801
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Features
Integrated LO Amplifier: 0dBm Drive
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 40 dB
Small Size: 0.8mm x 1.1mm
Typical Applications
The HMC258 is ideal for:
• Microwave Pt to Pt Radios
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC258 chip is a compact sub-harmonically
pumped (x2) single ended MMIC mixer with an
integrated LO amplifier which can be used as an
upconverter or downconverter. The chip utilizes a
GaAs MESFET technology that results in a small
overall chip area of 0.9mm
2
. The 2LO to RF isola-
tion is excellent eliminating the need for additional
filtering. The LO amplifier is a single bias (+5V)
two stage design with only 0dBm drive require-
ment. A less stringent oscillator design is made
possible by the low LO drive and sub-harmonic
nature of the chip. All data is with the chip in a 50
ohm test fixture connected via 0.025mm (1 mil)
diameter wire bonds of minimal length <0.31 mm
(<12 mils).
5
MIXERS - CHIP
Electrical Specifications,
T
A
= +25° C, LO Drive = 0 dBm
Parameter
Min.
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
2LO to RF Isolation
2LO to IF Isolation
IP3 (Input)
1 dB Compression (Input)
Supply Current (Idd)
30
30
0
-5
IF = 1 GHz
Vdd = +5.0V
Typ.
14 - 21
7 - 10.5
DC - 3
10
10
40
40 ~ 50
7
0
50
13.5
13.5
34
38
0
-4
Max.
Min.
IF = 1 GHz
Vdd = +5.0V
Typ.
17 - 20
8.5 - 10
DC - 3
9.5
9.5
40
40 ~ 50
7
1
50
12
12
Max.
GHz
GHz
GHz
dB
dB
dB
dB
dBm
dBm
mA
Units
5 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0801
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Conversion Gain vs.
Temperature @ LO = 0 dBm
0
-55 C
+25 C
Isolation @ LO = 0 dBm
0
LO/RF
-10
CONVERSION GAIN (dB)
-5
ISOLATION (dB)
-20
-30
-40
-50
LO/IF
RF/IF
2LO/RF
-10
-15
+85 C
-20
2LO/IF
-25
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
-60
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
5
0
+2 dBm
0 dBm
+4 dBm
0
-5
CONVERSION GAIN (dB)
-5
RETURN LOSS (dB)
-10
LO
-15
-20
RF
-25
IF
-30
-35
-10
-15
-4 dBm
-20
-2 dBm
-25
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
-40
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
IF Bandwidth @ LO = 0 dBm
0
Upconverter Performance
Conversion Gain vs. LO Drive
0
0 dBm
+4 dBm
IF CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
-5
-5
+2 dBm
-10
-10
-15
-15
-20
-20
-4 dBm
-2 dBm
-25
0
1
2
3
4
5
6
IF FREQUENCY (GHz)
-25
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 39
MIXERS - CHIP
Conversion Gain vs. LO Drive
Return Loss @ LO = 0 dBm
v01.0801
MICROWAVE CORPORATION
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Input IP3 vs. LO Drive
20
Input IP3 vs. Temperature @ LO = 0 dBm
20
THIRD ORDER INTERCEPT (dBm)
+2 dBm
15
10
5
0
-2 dBm
-5
-10
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
0 dBm
THIRD ORDER INTERCEPT (dBm)
-55 C
15
10
5
0
+85 C
-5
-10
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
+25 C
5
MIXERS - CHIP
SECOND ORDER INTERCEPT (dBm)
Input IP2 vs. LO Drive
60
55
50
45
0 dBm
40
35
30
25
20
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
-2 dBm
+2 dBm
Input IP2 vs. Temperature @ LO = 0 dBm
60
SECOND ORDER INTERCEPT (dBm)
55
-55 C
50
45
+25 C
40
35
+85 C
30
25
20
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
MxN Spurious Outputs
@ LO Drive = 0 dBm
nLO
mRF
-3
±5
±4
±3
±2
±1
0
P1dB vs. Temperature @ LO = 0 dBm
6
4
+25C
-55 C
P1dB (dBm)
-2
-1
0
1
2
3
-44
-57
-18
-52
-9
-26
X
-52
-56
-30
+20
-46
-49
-2
2
0
-2
+85 C
-4
13
14
15
16
17
18
19
20
21
22
23
RF FREQUENCY (GHz)
RF = 18 GHz @ -10 dBm
LO = 8.5 GHz @ 0 dBm
All values in dBc below the IF power level
5 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v01.0801
MICROWAVE CORPORATION
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Absolute Maximum Ratings
RF / IF Input (Vdd = +5V)
LO Drive (Vdd = +5V)
Vdd
Storage Temperature
Operating Temperature
+13 dBm
+13 dBm
+10 Vdc
-65 to +150 °C
-55 to +85 °C
NOTE: A 100pF single layer chip bypass capacitor
is recommended on the Vdd port no further than
0.762mm (30 mils) from the HMC258
5
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BOND PADS ARE .004” SQUARE.
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 41
MIXERS - CHIP
Outline Drawing
v01.0801
MICROWAVE CORPORATION
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
MIC Assembly Techniques
5
MIXERS - CHIP
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates
are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick
alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that
the surface of the die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat
spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize
bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor
(mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 Mils)
from the chip is recommended. The photo in figure 3 shows a typical assembly for the
HMC258 MMIC chip.
Figure 3:
Typical HMC258 Assembly
5 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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