TO
-9
BT169G-L
SCR
Rev. 2 — 10 November 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)
plastic package.
2
1.2 Features and benefits
Planar passivated for voltage
ruggedness and reliability
Very sensitive gate
1.3 Applications
Ignition circuits
Low power latching circuits
Protection / shut-down circuits: lighting
ballasts
Protection / shut-down circuits:
Switched Mode Power Supplies
1.4 Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
Quick reference data
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
non-repetitive peak on-state current half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; see
Figure 4;
see
Figure 5
RMS on-state current
half sine wave; T
lead
≤
83 °C;
see
Figure 1;
see
Figure 2
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
see
Figure 7
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
see
Figure 8
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
600
8
Unit
V
V
A
I
T(RMS)
-
-
0.8
A
Static characteristics
I
GT
I
H
I
L
gate trigger current
holding current
latching current
15
-
-
-
0.4
2
50
1
4
µA
mA
mA
NXP Semiconductors
BT169G-L
SCR
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
G
K
anode
gate
cathode
A
G
sym037
Simplified outline
Graphic symbol
K
321
SOT54 (TO-92)
3. Ordering information
Table 3.
Ordering information
Package
Name
BT169G-L
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
4. Limiting values
Table 4.
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
half sine wave; T
lead
≤
83 °C; see
Figure 3
half sine wave; T
lead
≤
83 °C; see
Figure 1;
see
Figure 2
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
see
Figure 4;
see
Figure 5
t
p
= 10 ms; sine-wave pulse
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Max
600
600
0.5
0.8
9
8
0.32
50
1
5
2
0.1
150
125
Unit
V
V
A
A
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
BT169G-L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 10 November 2011
2 of 12
NXP Semiconductors
BT169G-L
SCR
2
I
T(RMS)
(A)
1.5
001aab449
1
I
T(RMS)
(A)
0.8
001aab450
(1)
0.6
1
0.4
0.5
0.2
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
150
T
lead
(°C)
Fig 1.
RMS on-state current as a function of surge
duration for sinusoidal currents
0.8
Fig 2.
RMS on-state current as a function of lead
temperature; maximum values
001aab446
77
T
lead(max)
(°C)
89
P
tot
(W)
0.6
2.2
2.8
0.4
4
a=
1.57
1.9
101
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
I
T(AV)
(A)
113
α
0.2
0
0
0.1
0.2
0.3
0.4
125
0.6
Fig 3.
Total power dissipation as a function of average on-state current; maximum values
BT169G-L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 10 November 2011
3 of 12
NXP Semiconductors
BT169G-L
SCR
10
I
TSM
(A)
8
001aab499
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
001aab497
10
3
I
TSM
(A)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
1
10
−5
10
−4
10
−3
t
p
(s)
10
−2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT169G-L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 10 November 2011
4 of 12
NXP Semiconductors
BT169G-L
SCR
5. Thermal characteristics
Table 5.
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
Conditions
see
Figure 6
printed circuit board mounted: lead
length = 4 mm
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
10
2
Z
th(j-lead)
(K/W)
10
001aab451
1
P
δ
=
t
p
T
10
−1
t
p
T
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to lead as a function of pulse width
BT169G-L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 10 November 2011
5 of 12
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