v01.0700
MICROWAVE CORPORATION
HMC195
GaAs MMIC SOT26 T/R
SWITCH, DC - 2.5 GHz
Features
Low Insertion Loss: 0.4 dB
Ultra Small Package: SOT26
High Input IP3: +62 dBm
Positive Control: 0/+3V to 0/+8V
Typical Applications
The HMC195 is ideal for:
• MMDS & WirelessLAN
• PCMCIA Wireless Cards
• Portable Wireless
Functional Diagram
General Description
The HMC195 is a low-cost SPDT switch in a
6-lead SOT26 package for use in transmit or
receive applications which require very low dis-
tortion at high signal power levels. The device
can control signals from DC to 2.5 GHz and
is especially suited for 900 MHz and 1.8 - 2.2
GHz applications with less than 1 dB loss. The
design provides exceptional intermodulation per-
formance; a +62 dBm third order intercept at
8 Volt bias. RF1 and RF2 are reflective shorts
when “Off”. On-chip circuitry allows single posi-
tive supply operation at very low DC current with
control inputs compatible with CMOS and most
TTL logic families.
14
SWITCHES - SMT
Electrical Specifications,
T
A
= +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 1.0 GHz
0.5 - 2.5 GHz
DC - 2.5 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
10
24
ns
ns
22
19
15
20
12
9
30
29
58
55
Min.
Typ.
0.4
0.6
1.1
25
23
18
26
15
11
36
35
62
59
Max.
0.7
0.9
1.4
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Insertion Loss
Isolation
Return Loss
Input Power for 1dB Compression
Input Third Order Intercept
Switching Characteristics
0/8V Control
14 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v01.0700
MICROWAVE CORPORATION
HMC195
GaAs MMIC SOT26 T/R
SWITCH, DC - 2.5 GHz
GaAs MMIC
Insertion Loss
0
SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Isolation
0
-40C
-0.5
INSERTION LOSS (dB)
-10
-1
+85C
-1.5
+25C
ISOLATION (dB)
-20
-40C, +25C, +85C
-2
-2.5
-3
0
1
2
3
FREQUENCY (GHz)
-30
-40
0
1
2
3
FREQUENCY (GHz)
Return Loss
0
14
+25C
RETURN LOSS (dB)
-10
-20
-30
+85C
-40
0
1
2
3
FREQUENCY (GHz)
Input 0.1 and 1.0 dB
Compression vs. Control Voltage
INPUT POWER FOR 0.1 AND 1dB COMPRESSION
40
1 dB at 1900 MHz
Input Third Order
Intercept Point vs. Control Voltage
INPUT THIRD ORDER INTERCEPT (dBm)
65
60
900 MHz
35
1 dB at 900 MHz
0.1 dB at 900 MHz
55
50
45
1900 MHz
30
0.1 dB at 1900 MHz
25
40
35
2
4
6
Control Input (Vdc)
8
10
20
2
4
6
Control Input (Vdc)
8
10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 4
SWITCHES - SMT
MICROWAVE CORPORATION
v01.0700
HMC195
GaAs MMIC SOT26 T/R
SWITCH, DC - 2.5 GHz
Compression vs. Bias Voltage
Carrier at 900 MHz
Control
Input
(Vdc)
+3
+5
+8
Input Power
for 0.1 dB
Compression
(dBm)
23
29
34
Input Power
for 1.0 dB
Compression
(dBm)
27
33
36
Carrier at 1900 MHz
Input Power
for 0.1 dB
Compression
(dBm)
22
29
33
Input Power
for 1.0 dB
Compression
(dBm)
26
32
35
Caution: Do not operate in 1dB compression at power levels
above +33 dBm and do not “hot switch” power levels greater
than +23dBm (Vctl = +5Vdc).
DC blocks are required at ports RFC, RF1 and RF2.
Distortion vs. Bias Voltage
1 Watt Carrier at
900 MHz
Control
Input
Third
Order
Intercept
(dBm)
40
44
49
62
Second
Order
Intercept
(dBm)
87
88
90
90
1 Watt Carrier at
1900 MHz
Third
Order
Intercept
(dBm)
39
41
43
59
Second
Order
Intercept
(dBm)
79
85
91
99
14
SWITCHES - SMT
(Vdc)
+3
+4
+5
+8
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc.
Control Input*
A
(Vdc)
0
+3
0
+5
0
+8
B
(Vdc)
+3
0
+5
0
+8
0
Control Current
Ia
(uA)
-25
25
-120
120
-200
200
Ib
(uA)
25
-25
120
-120
200
-200
Signal Path State
RF to
RF1
ON
OFF
ON
OFF
ON
OFF
RF to
RF2
OFF
ON
OFF
ON
OFF
ON
14 - 50
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0700
HMC195
GaAs MMIC SOT26 T/R
SWITCH, DC - 2.5 GHz
Absolute Maximum Ratings
Max. Input Power
V
CTL
= 0/+8V
0.05 GHz
0.5 - 2.5 GHz
+27 dBm
+34 dBm
-0.2 to +12 Vdc
-65 to +150 °C
-40 to +85 °C
Control Voltage Range (A & B)
Storage Temperature
Operating Temperature
Outline Drawing
14
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 5
SWITCHES - SMT
MICROWAVE CORPORATION
v01.0700
HMC195
GaAs MMIC SOT26 T/R
SWITCH, DC - 2.5 GHz
Typical Application Circuit
14
Notes:
SWITCHES - SMT
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
14 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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