HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5551 is designed for general purpose applications
requiring high Breakdown Voltages.
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature ............................................................................................. -55 + 150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
250
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=100uA
IC=1.0mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HMBT5551
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
125 C
25 C
100
75 C
o
o
o
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 2/3
Saturation Voltage & Collector Current
100000
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage (mV)
10000
hFE
1000
75 C
100
125 C
o
o
10
hFE @ V
CE
=5V
25 C
o
1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
Capacitance & Reverse-Biased Voltage
100
25 C
o
Saturation Voltage (mV)
75 C
125 C
o
o
Capacitance (pF)
V
BE(sat)
@ I
C
=10I
B
10
Cob
100
0.1
1
10
100
1000
1
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
10000
Safe Operating Area
Cutoff Frequency (MHz)
..
.
1000
Collecotr Current-I
C
(mA)
PT=1s
100
V
CE
=10V
100
PT=1ms
PT=100ms
10
10
1
10
100
1
1
10
100
1000
Collector Current (mA)
Forward Biased Voltage-V
CE
(V)
HMBT5551
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 3/3
A
L
Marking:
3
B S
1
V
G
2
G 1
Rank Code
Control Code
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
C
D
H
K
J
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102
0.1204
0.0472
0.0630
0.0335
0.0512
0.0118
0.0197
0.0669
0.0910
0.0005
0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT5551
HSMC Product Specification
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
