PD-94155A
IRF5M4905
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRF5M4905
R
DS(on)
0.03
I
D
-35A*
55V, P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
TO-254AA
Description
Fifth Generation HEXFET power MOSFETs from IR HiRel
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon unit area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits.
Features
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= -10V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For Footnotes refer to the page 2.
1
2016-06-29
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
-35*
-35*
-140
125
1.0
± 20
490
-35
12.5
-2.2
-55 to + 150
°C
W
W/°C
V
mJ
A
mJ
V/ns
A
I
D
@ V
GS
= -10V, T
C
= 100°C Continuous Drain Current
Units
IRF5M4905
Electrical Characteristics @ T
j
= 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-55
––– –––
––– -0.053 –––
–––
-2.0
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
3570
1310
505
0.03
-4.0
–––
-25
-250
-100
100
195
45
75
35
165
95
130
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -10V, I
D
= -35A
V
S
µA
nA
nC
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -25V, I
D
= -35A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -35A
V
DS
= -44V
V
GS
= -10V
V
DD
= -28V
I
D
= -35A
R
G
= 2.5
V
GS
= -10V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
ns
nH
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-35*
-140
-1.6
120
365
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= -35A, V
GS
= 0V
T
J
= 25°C, I
F
= -35A, V
DD
≤
- 30V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case -to-Sink
Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
1.0
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -25V, starting T
J
= 25°C, L = 0.8mH, Peak I
L
= -35A, V
GS
= -10V,R
G
= 25
V
I
SD
-35A, di/dt
-230A/µs, V
DD
-55V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%.
2
2016-06-29
IRF5M4905
1000
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
1000
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
100
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
10
-4.5V
10
-4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -35A
-I
D
, Drain-to-Source Current (A)
100
T
J
= 25
°
C
T
J
= 150
°
C
1.5
1.0
10
0.5
1
4.0
V DS= -25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
7000
6000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= -35A
V
DS
=-44V
V
DS
=-28V
V
DS
=-11V
16
C, Capacitance (pF)
5000
4000
3000
2000
1000
0
Ciss
12
Coss
8
Crss
4
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2016-06-29
IRF5M4905
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
-I D, Drain-to-Source Current (A)
100
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
-VDS , Drain-toSource Voltage (V)
1
ms
1
0ms
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
V
SD
,Source-to-Drain Voltage (V)
100
Fig 7.
Typical Source-Drain Diode Forward Voltage
60
Fig 8.
Maximum Safe Operating Area
1250
LIMITED BY PACKAGE
50
40
E
AS
, Single Pulse Avalanche Energy (mJ)
1000
ID
TOP
-15.7A
-22A
BOTTOM -35A
-I
D
, Drain Current (A)
750
30
500
20
10
250
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-06-29
IRF5M4905
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 14a.
Switching Time Test Circuit
5
Fig 14b.
Switching Time Waveforms
2016-06-29
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