ASG101
DC-3000 MHz
SiGe HBT Amplifier
Features
·SiGe
Technology
·22
dB Gain at 900 MHz
·+18
dBm P1dB
·+31
dBm Output IP3
·3.0
dB Noise Figure
·Single
+4.5 V Supply
·SOT-89
Surface Mount Package
Description
The ASG101 is designed for high linearity, high
gain, and low noise over a wide range of fre-
quency, being suitable for use in both receiver
and transmitter of wireless and wireline telecom-
munication systems. The product is manufactured
using a state-of-the-art SiGe HBT process of the
company's own, making it cost-effective and
highly reliable. The amplifiers are available in
a low cost SOT-89 package completing stringent
DC and RF tests.
Package Style: SOT-89
Specifications
1)
Parameters
Frequency Range
Gain
Input VSWR
Output VSWR
Output IP3
2)
Units
MHz
dB
-
-
dBm
dB
dBm
mA
V
4)
Min.
Typ.
250 - 2500
22
1.5
1.5
Max.
Applications
·CDMA,
GSM, W-CDMA, PCS
·PA
Driver Amplifier
·Gain
Block
28
31
3.0
18
33
·CATV
Amplifier
·IF
Amplifier
Noise Figure
Output P1dB
Supply Current
Supply Voltage
Thermal Resistance, R
th
40
55
4.5
99.6
75
°C/W
1) Measurement conditions are as follows: T = 25°C, V
s
= 4.5 V, Freq. = 900 MHz, 50 ohm system.
2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line.
3) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
4) The thermal resistance was determined at a DC power of 0.243 W (V
CC
=4.5 V, I
C
=54 mA) with RF signal and a lead temperature
of 90.3
°C.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Supply Voltage
Input RF Power (continuous)
Rating
-40 to
+
85°C
-40 to
+
150°C
6V
+6 dB above Input P1dB
Remarks
More Information
Website: www.asb.co.kr
E-mail: sales@asb.co.kr
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB Inc., 4th Fl. Venture Town
Bldg., 367-17 Goijeong-Dong,
Seo-Gu, Daejon 302-716, Korea
Application Note
Application circuit for 900 MHz
Application circuit for 2 GHz
Ordering Information
Part Number
ASG101
EB-ASG101-900
EB-ASG101-2000
Description
High linearity medium power amplifier
(Available in tape and reel)
Fully assembled evaluation kit (900 MHz)
Fully assembled evaluation kit (2000 MHz)
1/6
www.ASB.co.kr
March. 2004
ASG101
Outline Drawing
(Unit: mm)
3
a
2
2
1
Pin Description
Function
Input
Ground
Output
Pin No.
1
2
3
Land Pattern
Mounting Configuration
(Unit: mm)
Note: 1. The number and size of ground via holes in a circuit board is critical for thermal
and RF grounding considerations.
2. We recommend that the ground via holes be placed on the bottom of lead pin 2
for better RF and thermal performance, as shown in the drawing at the left side.
2/6
www.ASB.co.kr
March. 2004
ASG101
Application Circuit: 900 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11
Magnitude S22
Output P1dB
Output IP3
2)
1)
1)
Schematic
Vs=4.5V
C4=
C5= C6=
100 pF 1000 pF 1
µF
900 MHz
22 dB
-16 dB
-19 dB
18 dBm
31 dBm
3.0 dB
4.5 V
55 mA
R1=10 kΩ
RF IN
C1=6 pF
L1=22 nH
RF OUT
50
Ω
5.5 mm
L2=10nH
C2=5.6 pF
ASG101
50
Ω
4.5 mm
C3=100pF
Noise Figure
Supply Voltage
Current
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
28
Board Layout (FR4, 40x40 mm
2
, 0.8T)
Frequency = 900MHz
26
24
22
20
18
16
-60
-40
-20
0
20
40
60
80
100
S-parameters
0
-5
-10
-15
-20
-25
-30
-35
600
700
800
900
1000
1100
1200
0
+ 85
Β
C
+ 25
Β
C
- 40
Β
C
S12 (dB)
-5
-10
-15
-20
-25
-30
-35
600
700
800
900
1000
1100
1200
+85
Β
C
+25
Β
C
-40
Β
C
S11 (dB)
Frequency (MHz)
Frequency (MHz)
3/6
www.ASB.co.kr
March. 2004
ASG101
Application Circuit: 2000 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11
Magnitude S22
Output P1dB
Output IP3
2)
1)
1)
Schematic
2000 MHz
15 dB
-20 dB
-17 dB
18 dBm
31 dBm
4.0 dB
4.5 V
55 mA
L2=22nH
RF IN
C1=2 pF
R1=10 kΩ
RF OUT
L1=22 nH
Vs=4.5V
C4=
C5= C6=
100 pF 1000 pF 1
µF
Noise Figure
Supply Voltage
Current
50
Ω
5.5 mm
C2=1.5 pF
ASG101
50
Ω
4.5 mm
C3=100pF
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
20
Board Layout (FR4, 40x40 mm
2
, 0.8T)
18
Frequency = 2GHz
16
14
12
10
-60
-40
-20
0
20
40
60
80
100
S-parameters
0
-5
-10
-15
0
-5
-10
-15
+ 85
Β
C
+ 25
Β
C
- 40
Β
C
S11 (dB)
-20
-25
-30
-35
-40
-45
1600
S12 (dB)
2400
-20
-25
-30
-35
-40
-45
1600
+ 85
Β
C
+ 25
Β
C
- 40
Β
C
1700
1800
1900
2000
2100
2200
2300
1700
1800
1900
2000
2100
2200
2300
2400
Frequency (MHz)
Frequency (MHz)
5/6
www.ASB.co.kr
March. 2004
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