TM
HIP0061
60V, 3.5A, 3-Transistor Common Source
ESD Protected Power MOSFET Array
Description
The HIP0061 is a power MOSFET array that consists of
three matched N-Channel enhancement mode MOS transis-
tors connected in a common source configuration. The
advanced Intersil PASIC2 process technology used in this
product utilizes efficient geometries that provides outstand-
ing device performance and ruggedness.
The HIP0061 is designed to integrate three power devices in
one chip thus providing board layout area and heat sink sav-
ings for applications such as Motor Controls, Lamps,
Solenoids and Resistive Loads.
December 1997
Features
• Three 3.5A Power MOS N-Channel Transistors
• Output Voltage to 60V
• r
DS(ON)
. . . . . 0.225Ω Max Per Transistor at V
GS
= 10V
• Pulsed Current . . . . . . . . . . . . . . . .10A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation
Applications
• Automotive
• Appliance
• Industrial Control
• Robotics
• Relay, Solenoid, Lamp Drivers
Symbol
DRAIN1
2
GATE2
3
DRAIN2
5
DRAIN3
7
Ordering Information
PART NUMBER
HIP0061AS1
TEMP.
RANGE (
o
C)
-40 to 125
PACKAGE
7 Ld Staggered
Vertical SIP
7 Ld Gullwing SIP
PKG.
NO.
Z7.05C
GATE1
1
GATE3
6
4
SOURCE, TAB
HIP0061AS2
-40 to 125
Z7.05B
Pinouts
HIP0061AS1
(SIP - VERTICAL)
TOP VIEW
7
6
5
4
3
2
1
DRAIN3
GATE3
DRAIN2
SOURCE
GATE2
DRAIN1
GATE 1
TAB
TAB
TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4
TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4
HIP0061AS2
(SIP - GULLWING)
TOP VIEW
7
6
5
4
3
2
1
DRAIN3
GATE3
DRAIN2
SOURCE
GATE2
DRAIN1
GATE 1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
FN3982.3
1
HIP0061
Absolute Maximum Ratings
T
A
= 25
o
C
Thermal Information
Thermal Resistance (Typical, Note 4)
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
SIP-Vertical Package . . . . . . . . . . . . .
55
3
SIP-Gullwing Package . . . . . . . . . . . .
55
3
Maximum Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . 150
o
C
Maximum Storage Temperature Range, T
STG
. . . . -55
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
o
C
Drain to Source Voltage, V
DS
(Over Operating Junction and Case Temperature Range). . . . 60V
Drain to Gate Voltage, V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate to Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . .-15, +20V
Pulsed Drain Current, I
DM
, Each Output,
All Outputs on at V
GS
= 10V (Notes 1, 2) . . . . . . . . . . . . . . . . 10A
Continuous Source to Drain Diode Current, I
SD
at V
GS
= 10V (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A
Continuous Drain Current, I
DS
, Each Output,
All Outputs on at V
GS
= 10V (Note 2) . . . . . . . . . . . . . . . . . . 3.5A
Single Pulse Avalanche Energy, E
AS
(Note 3). . . . . . . . . . . . 100mJ
Die Characteristics
Back Side Potential . . . . . . . . . . . . . . . . . . . . . . . . . V- (Source, Tab)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 125
o
C
Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
DD
= 25V, Start T
J
= 25
o
C, L = 15mH, R
GS
= 50Ω, I
PEAK
= 3.5A. See Figures 1, 2, 12, and 13.
4.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETERS
Drain to Source Breakdown Voltage
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 100µA, V
GS
= 0V
T
C
= -40
o
C to
125
o
C
T
C
= 25
o
C
MIN
60
-
1.8
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
V
DS
= 50V, V
GS
= 10V, I
D
= 2A
See Figures 16, 17
-
-
-
TYP
-
70
2.3
-
-
-
-
0.215
0.365
0.275
0.465
95
2.5
10
25
18
12
8.0
0.7
3.5
MAX
-
-
2.7
1
10
100
-100
0.265
0.425
0.320
0.5
-
-
-
-
-
-
9.5
1.0
4.0
UNITS
V
V
V
µA
µA
nA
nA
Ω
Ω
Ω
Ω
%
S
ns
ns
ns
ns
nC
nC
nC
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 60V
V
GS
= 0V
V
DS
= 0V, V
GS
= 20V
V
DS
= 0V, V
GS
= -15V
V
GS
= 10V, I
D
= 3.5A
V
GS
= 10V, I
D
= 3.5A
V
GS
= 5V, I
D
= 2A
V
GS
= 5V, I
D
= 2A
Forward Gate Current, Drain Short
Circuited to Source
Reverse Gate Current, Drain Short
Circuited to Source
Drain to Source On Resistance (Note 5)
I
GSSF
I
GSSR
r
DS(ON)
Drain to Source On Resistance Matching
Forward Transconductance (Note 5)
Turn-On Delay Time (Note 6)
Rise Time (Note 6)
Turn-Off Delay Time (Note 6)
Fall Time (Note 6)
Total Gate Charge (Note 6)
Gate-Source Charge (Note 6)
Gate-Drain Charge (Note 6)
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 3.5A
V
DS
= 10V, I
D
= 1A
V
DD
= 30V, R
L
= 15Ω,
V
GS
= +10V, I
D
= 2A, R
G
= 50Ω
See Figure 14
2
HIP0061
Electrical Specifications
PARAMETERS
Short-Circuit Input Capacitance,
Common Source
Short-Circuit Output Capacitance,
Common Source
Short-Circuit Reverse Transfer
Capacitance, Common Source
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
MIN
-
-
-
TYP
142
107
24
MAX
-
-
-
UNITS
pF
pF
pF
Source-Drain Diode Ratings and Specifications
PARAMETERS
Diode Forward Voltage (Note 5)
Reverse Recovery Time
NOTES:
5. Pulse test: Pulse width
≤
300µs, duty cycle
≤
2%.
6. Independent of operating temperature.
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 2A, V
GS
= 0V
I
SD
= 2A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
0.9
50
MAX
1.1
-
UNITS
V
ns
Typical Performance Curves
10
10µs
I
D
, DRAIN CURRENT (A)
10
10µs
100µs
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 105
o
C
T
J
= MAX RATED
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10ms
100ms
DC
1ms
I
D
, DRAIN CURRENT (A)
100µs
10ms
100ms
DC
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
1
10
0.1
100
0.1
V
DS
, DRAIN VOLTAGE (V)
FIGURE 1A. 25
o
C SAFE-OPERATING AREA CURVE
FIGURE 1B. 105
o
C SAFE-OPERATING AREA CURVE
3
HIP0061
Typical Performance Curves
(Continued)
50
I
AS
, AVALANCHE CURRENT (A)
10
I
D
, DRAIN CURRENT (A)
10µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 125
o
C
T
J
= MAX RATED
1
100µs
10ms
100ms
DC
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
10
5
STARTING T
J
= 125
o
C
STARTING T
J
= 25
o
C
0.1
100
1
0.001
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1.0
FIGURE 1C. 125
o
C SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
10.0
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
20
V
GS
= 5V
I
D
, DRAIN CURRENT (A)
15
V
DS
= 15V
-40
o
C
25
o
C
125
o
C
I
D
, DRAIN CURRENT (A)
7.5
5.0
V
GS
= 4V
2.5
PULSE DURATION = 300µs, T
C
= 25
o
C
0
0
2
4
6
8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
5
0
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 3. TYPICAL SATURATION CHARACTERISTICS
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
r
DS(ON)
, NORMALIZED ON RESISTANCE
2.5
PULSE DURATION = 300µs, V
GS
= 10V, I
D
= 3.5A
2.0
NORMALIZED BV
DSS
1.2
I
D
= 100µA
1.1
1.5
1.0
1.0
0.5
0.9
0
-75
-25
25
75
125
175
T
J
, JUNCTION TEMPERATURE (
o
C)
0.8
-75
-25
25
75
125
T
J
, JUNCTION TEMPERATURE (
o
C)
175
FIGURE 5. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERA-
TURE
FIGURE 6. NORMALIZED BV
DSS
vs JUNCTION TEMPERATURE
4
HIP0061
Typical Performance Curves
(Continued)
2.0
V
GS
, GATE-SOURCE VOLTAGE (V)
V
GS
= V
DS
, I
D
= 250µA
V
GS(TH)
, NORMALIZED
1.5
12
V
DS
= 50V
V
DS
= 30V
8
V
DS
= 20V
1.0
4
0.5
0
-75
I
D
= 2.0A, T
C
= 25
o
C
0
0
2
4
6
Q, GATE CHARGE (nC)
8
10
-25
25
75
125
175
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 7. NORMALIZED V
GS(TH)
vs JUNCTION TEMPERA-
TURE
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
750
V
GS
= 0V, f = 1MHz, T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
5
C, CAPACITANCE (pF)
600
4
450
C
ISS
C
OSS
C
RSS
3
V
GS
= 10V
V
GS
= 5V
300
2
150
1
0
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 9. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
5
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