HM62W8512B Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-904E (Z)
Rev. 4.0
Oct. 20, 1999
Description
The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.35 µ m Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high
density mounting. The HM62W8512B is suitable for battery backup system.
Features
•
Single 3.3 V supply: 3.3 V ± 0.3 V
•
Access time: 55/70 ns (max)
•
Power dissipation
Active: 16.5 mW/MHz (typ)
Standby: 3.3 µW (typ)
•
Completely static memory. No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly LV-TTL compatible: All inputs and outputs
•
Battery backup operation
HM62W8512B Series
Ordering Information
Type No.
HM62W8512BLFP-5
HM62W8512BLFP-7
Access time
55 ns
70 ns
Package
525-mil 32-pin plastic SOP (FP-32D)
HM62W8512BLFP-5SL 55 ns
HM62W8512BLFP-7SL 70 ns
HM62W8512BLFP-5UL 55 ns
HM62W8512BLFP-7UL 70 ns
HM62W8512BLTT-5
HM62W8512BLTT-7
HM62W8512BLTT-5SL
HM62W8512BLTT-7SL
55 ns
70 ns
55 ns
70 ns
400-mil 32-pin plastic TSOP II (TTP-32D)
HM62W8512BLTT-5UL 55 ns
HM62W8512BLTT-7UL 70 ns
HM62W8512BLRR-5
HM62W8512BLRR-7
55 ns
70 ns
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
HM62W8512BLRR-5SL 55 ns
HM62W8512BLRR-7SL 70 ns
HM62W8512BLRR-5UL 55 ns
HM62W8512BLRR-7UL 70 ns
2
HM62W8512B Series
Function Table
WE
×
H
H
L
L
CS
H
L
L
L
L
OE
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note:
×:
H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
–20 to +70
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. –3.0 V for pulse half-width
≤
30 ns
2. Maximum voltage is 4.6 V
Recommended DC Operating Conditions
(Ta = –20 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
3.0
0
2.0
–0.3*
1
Typ
3.3
0
—
—
Max
3.6
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
1. –3.0 V for pulse half-width
≤
30 ns
5
嵌入式系统
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