HM62W8512BI Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-1086A (Z)
Rev. 1.0
Jul. 13, 1999
Description
The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword
×
8-bit. HM62W8512BI Series
has realized higher density, higher performance and low power consumption by employing Hi-CMOS process
technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable
for battery backup systems. It is packaged in standard 32-pin TSOP II.
Features
•
Single 3.3 V supply: 3.3 V
±
0.3V
•
Access time: 70/85 ns (max)
•
Power dissipation
Active: 16.5 mW/MHz (typ)
Standby: 3.3
µW
(typ)
•
Completely static memory. No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly LV-TTL compatible: All inputs and outputs
•
Battery backup operation
•
Operating temperature: –40 to +85˚C
Ordering Information
Type No.
HM62W8512BLTTI-7
HM62W8512BLTTI-8
Access time
70 ns
85 ns
Package
400-mil 32-pin plastic TSOP II (TTP-32D)
HM62W8512BI Series
Function Table
WE
×
H
H
L
L
CS
H
L
L
L
L
OE
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note:
×:
H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
–40 to +85
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. –3.0 V for pulse half-width
≤
30 ns
2. Maximum voltage is 4.6 V
Recommended DC Operating Conditions
(Ta = –40 to +85°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
3.0
0
2.4
–0.3
*1
Typ
3.3
0
—
—
Max
3.6
0
V
CC
+ 0.3
0.6
Unit
V
V
V
V
1. –3.0 V for pulse half-width
≤
30 ns
4
HM62W8512BI Series
DC Characteristics
(Ta = –40 to +85°C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Parameter
Input leakage current
Output leakage current
Operating power
supply current: DC
Operating power supply current
Symbol
|I
LI
|
|I
LO
|
I
CC
I
CC1
Min
—
—
—
—
Typ*
1
—
—
—
—
Max
1
1
10
45
Unit Test conditions
µA
µA
mA
mA
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
IH
or
WE
= V
IL
, V
I/O
= V
SS
to V
CC
CS
= V
IL
,
others = V
IH
/V
IL
, I
I/O
= 0 mA
Min cycle, duty = 100%
CS
= V
IL
, others = V
IH
/V
IL
I
I/O
= 0 mA
Cycle time = 1
µs,
duty = 100%
I
I/O
= 0 mA,
CS
≤
0.2 V
V
IH
≥
V
CC
– 0.2 V,
V
IL
≤
0.2 V
CS
= V
IH
Vin
≥
0 V,
CS
≥
V
CC
– 0.2 V
I
OL
= 2.0 mA
I
OL
= 100
µA
I
OH
= –100
µA
I
OH
= –2.0 mA
Operating power
supply current
I
CC2
—
5
10
mA
Standby power supply
current: DC
Standby power supply
current (1): DC
Output low voltage
I
SB
I
SB1
V
OL
—
—
—
—
0.1
1*
2
—
—
0.3
40*
2
0.4
0.2
—
—
mA
µA
V
V
V
V
Output high voltage
V
OH
V
CC
– 0.2 —
2.4
—
Note:
1. Typical values are at V
CC
= 3.3 V, Ta = +25°C and specified loading, and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance*
1
Input/output capacitance*
1
Note:
Symbol
Cin
C
I/O
Typ
—
—
Max
8
10
Unit
pF
pF
Test conditions
Vin = 0 V
V
I/O
= 0 V
1. This parameter is sampled and not 100% tested.
5
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