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HM62W8511HC: 产品描述4M High Speed SRAM (512-kword x 8-bit); 文件大小70KB，共14页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HM62W8511HC概述

4M High Speed SRAM (512-kword x 8-bit)

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HM62W8511HC Series

4M High Speed SRAM (512-kword

8-bit)

ADE-203-1201 (Z)

Preliminary

Rev. 0.0

Sep. 20, 2000

Description

The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword

8-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed, high density memory and

wide bit width configuration, such as cache and buffer memory in system. The HM62W8511HC is packaged

in 400-mil 36-pin SOJ for high density surface mounting.

Features

•

Single supply : 3.3 V

0.3 V

•

Access time : 10 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current : 115 mA (max)

•

TTL standby current : 40 mA (max)

•

CMOS standby current : 5 mA (max)

: 1 mA (max) (L-version)

•

Data retension current : 0.6 mA (max) (L-version)

•

Data retension voltage : 2 V (min) (L-version)

•

Center V

and V

type pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your nearest

Hitachi’s Sales Dept. regarding specification.

HM62W8511HC相似产品对比

	HM62W8511HC	HM62W8511HCJP-10	HM62W8511HCLJP-10
描述	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)
零件包装代码	-	SOJ	SOJ
包装说明	-	SOJ, SOJ36,.44	SOJ, SOJ36,.44
针数	-	36	36
Reach Compliance Code	-	unknown	unknow
ECCN代码	-	3A991.B.2.A	3A991.B.2.A
最长访问时间	-	10 ns	10 ns
I/O 类型	-	COMMON	COMMON
JESD-30 代码	-	R-PDSO-J36	R-PDSO-J36
长度	-	23.25 mm	23.25 mm
内存密度	-	4194304 bit	4194304 bi
内存集成电路类型	-	CACHE SRAM	CACHE SRAM
内存宽度	-	8	8
功能数量	-	1	1
端子数量	-	36	36
字数	-	524288 words	524288 words
字数代码	-	512000	512000
工作模式	-	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	-	70 °C	70 °C
组织	-	512KX8	512KX8
输出特性	-	3-STATE	3-STATE
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	-	SOJ	SOJ
封装等效代码	-	SOJ36,.44	SOJ36,.44
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE
并行/串行	-	PARALLEL	PARALLEL
电源	-	3.3 V	3.3 V
认证状态	-	Not Qualified	Not Qualified
座面最大高度	-	3.76 mm	3.76 mm
最大待机电流	-	0.005 A	0.001 A
最小待机电流	-	2 V	2 V
最大压摆率	-	0.115 mA	0.115 mA
最大供电电压 (Vsup)	-	3.6 V	3.6 V
最小供电电压 (Vsup)	-	3 V	3 V
标称供电电压 (Vsup)	-	3.3 V	3.3 V
表面贴装	-	YES	YES
技术	-	CMOS	CMOS
温度等级	-	COMMERCIAL	COMMERCIAL
端子形式	-	J BEND	J BEND
端子节距	-	1.27 mm	1.27 mm
端子位置	-	DUAL	DUAL
宽度	-	10.16 mm	10.16 mm
Base Number Matches	-	1	1

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