HM62W16255HI Series
4M High Speed SRAM (256-kword
×
16-bit)
ADE-203-1038B (Z)
Rev. 2.0
Jan. 20, 2000
Description
The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword
×
16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII.
Features
•
Single 3.3 V supply: 3.3 V
±
0.3V
•
Access time: 15 ns (max)
•
Completely static memory
No clock or timing strobe required
•
Equal access and cycle times
•
Directly TTL compatible
All inputs and outputs
•
Operating current: 160 mA (max)
•
TTL standby current: 50 mA (max)
•
CMOS standby current: 5 mA (max)
•
Center V
CC
and V
SS
type pinout
•
Temperature range: –40 to 85°C
HM62W16255HI Series
Ordering Information
Type No.
HM62W16255HJPI-15
HM62W16255HTTI-15
Access time
15 ns
15 ns
Package
400-mil 44-pin plastic SOJ (CP-44D)
400-mil 44-pin plastic TSOPII (TTP-44DE)
Pin Arrangement
HM62W16255HJPI Series
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
V
CC
V
SS
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
V
SS
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
HM62W16255HTTI Series
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
(Top View)
(Top View)
2
HM62W16255HI Series
Pin Description
Pin name
A0 to A17
I/O1 to I/O16
CS
OE
WE
UB
LB
V
CC
V
SS
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Upper byte select
Lower byte select
Power supply
Ground
No connection
Block Diagram
A1
A17
A7
A11
A16
A2
A6
A5
(MSB)
(LSB)
V
CC
Row
decoder
Memory matrix
256 rows
×
8 columns
×
128 blocks
×
16 bit
(4,194,304 bits)
V
SS
CS
I/O1
.
.
.
I/O8
I/O9
.
.
.
I/O16
WE
CS
LB
UB
Column I/O
Input
data
control
Column decoder
CS
A10 A8 A9 A12 A13 A14 A0 A15 A3 A4
OE
CS
3
HM62W16255HI Series
Operation Table
CS
H
L
L
L
L
L
L
L
L
L
Note:
OE
×
H
L
L
L
L
×
×
×
×
WE
×
H
H
H
H
H
L
L
L
L
×:
H or L
LB
×
×
L
L
H
H
L
L
H
H
UB
×
×
L
H
L
H
L
H
L
H
Mode
Standby
Output disable
Read
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Lower byte read I
CC
Upper byte read I
CC
—
Write
I
CC
I
CC
Lower byte write I
CC
Upper byte write I
CC
—
I
CC
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
–40 to +85
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
8 ns
4
HM62W16255HI Series
Recommended DC Operating Conditions
(Ta = –40 to +85°C)
Parameter
Supply voltage
Symbol
V
CC
*
3
V
SS
*
4
Input voltage
V
IH
V
IL
Notes: 1.
2.
3.
4.
Min
3.0
0
2.2
–0.5*
1
Typ
3.3
0
—
—
Max
3.6
0
V
CC
+ 0.5*
2
0.8
Unit
V
V
V
V
V
IL
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
8 ns
The supply voltage with all V
CC
pins must be on the same level.
The supply voltage with all V
SS
pins must be on the same level.
DC Characteristics
(Ta = –40 to +85°C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Parameter
Input leakage current
Output leakage
current*
1
Operating power
supply current
Standby power supply
current
Symbol Min
|I
LI
|
|I
LO
|
15 ns cycle I
CC
—
—
—
Typ*
1
—
—
—
Max
2
2
160
Unit Test conditions
µA
µA
mA
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
IL
, Iout = 0 mA
Other inputs = V
IH
/V
IL
Min cycle,
CS
= V
IH
,
Other inputs = V
IH
/V
IL
f = 0 MHz
V
CC
≥
CS
≥
V
CC
– 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
I
OL
= 8 mA
I
OH
= –4 mA
15 ns cycle I
SB
I
SB1
—
—
—
0.05
50
5
mA
mA
Output voltage
V
OL
V
OH
—
2.4
—
—
0.4
—
V
V
Note:
1. Typical values are at V
CC
= 3.3 V, Ta = +25°C and not guaranteed.
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Input capacitance*
1
Input/output capacitance*
1
Note:
Symbol
Cin
C
I/O
Min
—
—
Typ
—
—
Max
6
8
Unit
pF
pF
Test conditions
Vin = 0 V
V
I/O
= 0 V
1. This parameter is sampled and not 100% tested.
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
