HM62V8512C Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-1210A (Z)
Rev. 1.0
Jan. 31, 2001
Description
The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing CMOS process technology (6-transistor
memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is
available for high density mounting. The HM62V8512C is suitable for battery backup system.
Features
•
Single 3.0 V supply: 2.7 V to 3.6 V
•
Access time: 55/70 ns (max)
•
Power dissipation
Active: 6.0 mW/MHz (typ)
Standby: 2.4 µW (typ)
•
Completely static memory. No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly LV-TTL compatible: All inputs
•
Battery backup operation
HM62V8512C Series
Ordering Information
Type No.
HM62V8512CLFP-5
HM62V8512CLFP-7
HM62V8512CLFP-5SL
HM62V8512CLFP-7SL
HM62V8512CLTT-5
HM62V8512CLTT-7
HM62V8512CLTT-5SL
HM62V8512CLTT-7SL
HM62V8512CLRR-5
HM62V8512CLRR-7
HM62V8512CLRR-5SL
HM62V8512CLRR-7SL
Access time
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
400-mil 32-pin plastic TSOP II (TTP-32D)
Package
525-mil 32-pin plastic SOP (FP-32D)
2
HM62V8512C Series
Function Table
WE
×
H
H
L
L
CS
H
L
L
L
L
OE
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note:
×:
H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
–20 to +70
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. V
T
min: –3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is 4.6 V.
Recommended DC Operating Conditions
(Ta = –20 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
2.7
0
2.0
–0.3*
1
Typ
3.0
0
—
—
Max
3.6
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
1. V
IL
min: –3.0 V for pulse half-width
≤
30 ns.
5
模拟与混合信号
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