HM62V8512B Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-905G (Z)
Rev. 6.0
Mar. 31, 2000
Description
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.35
µm
Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high
density mounting. The HM62V8512B is suitable for battery backup system.
Features
•
Single 3.0 V supply: 2.7 V to 3.6 V
•
Access time: 70/85 ns (max)
•
Power dissipation
Active: 15 mW/MHz (typ)
Standby: 3
µW
(typ)
•
Completely static memory. No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly LV-TTL compatible: All inputs
•
Battery backup operation
HM62V8512B Series
Ordering Information
Type No.
HM62V8512BLFP-7
HM62V8512BLFP-8
HM62V8512BLFP-7SL
HM62V8512BLFP-8SL
HM62V8512BLFP-7UL
HM62V8512BLFP-8UL
HM62V8512BLTT-7
HM62V8512BLTT-8
HM62V8512BLTT-7SL
HM62V8512BLTT-8SL
HM62V8512BLTT-7UL
HM62V8512BLTT-8UL
HM62V8512BLRR-7
HM62V8512BLRR-8
HM62V8512BLRR-7SL
HM62V8512BLRR-8SL
HM62V8512BLRR-7UL
HM62V8512BLRR-8UL
Access time
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
400-mil 32-pin plastic TSOP II (TTP-32D)
Package
525-mil 32-pin plastic SOP (FP-32D)
2
HM62V8512B Series
Function Table
WE
×
H
H
L
L
CS
H
L
L
L
L
OE
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note:
×:
H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
–20 to +70
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. –3.0 V for pulse half-width
≤
30 ns
2. Maximum voltage is 4.6 V
Recommended DC Operating Conditions
(Ta = –20 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
2.7
0
2.0
–0.3*
1
Typ
3.0
0
—
—
Max
3.6
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
1. –3.0 V for pulse half-width
≤
30 ns
5
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