Semiconductor
HCTS374MS
Radiation Hardened Octal D-Type
Flip-Flop, Three-State, Positive Edge Triggered
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
1
2
3
4
5
6
7
8
9
20 VCC
19 Q7
18 D7
17 D6
16 Q6
15 Q5
14 D5
13 D4
12 Q4
11 CP
August 1995
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
10
12
RAD (Si)/s
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
GND 10
Description
The Harris HCTS374MS is a Radiation Hardened non-inverting
octal D-type, positive edge triggered flip-flop with three-stateable
outputs. The eight flip-flops enter data into their registers on the
LOW-to-HIGH transition of the clock (CP). Data is also trans-
ferred to the outputs during this transition. The output enable
(OE) controls the three-state outputs and is independent of the
register operation. When the output enable is high, the outputs
are in the high impedance state.
The HCTS374MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS374MS is supplied in a 20 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
GND
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP
Ordering Information
PART NUMBER
HCTS374DMSR
HCTS374KMSR
HCTS374D/Sample
HCTS374K/Sample
HCTS374HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Harris Class S Equivalent
Harris Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
DB NA
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
©
Harris Corporation 1995
Spec Number
File Number
650
518635
2134.2
HCTS374MS
Functional Diagram
1 OF 8
(3, 4, 7, 8, 13, 14, 17, 18)
D
COMMON CONTROLS
CP
11
FF
D
Q
OE
Q
(2, 5, 6, 9, 12, 15, 16, 19)
CP
OE
1
TRUTH TABLE
INPUTS
OE
L
L
L
H
H =High Level (Steady State)
L =Low Level (Steady State)
X =Immaterial
Z =High Impedance
= Transition from Low to High Level
Q0 =The level of Q before the indicated input conditions were established
L
X
CP
Dn
H
L
X
X
OUTPUTS
Qn
H
L
Q0
Z
Spec Number
651
518635
Specifications HCTS374MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 107
o
C/W 28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
7.2
6.0
-7.2
-6.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
±1
±50
-
µA
µA
µA
µA
-
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or
VCC, VCC = 5.5V
1
2, 3
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
652
518635
Specifications HCTS374MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
Enable to Output
TPZL
VCC = 4.5V
9
10, 11
TPZH
VCC = 4.5V
9
10, 11
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
MAX
27
31
31
35
32
36
26
29
22
25
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Clock to Q
SYMBOL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
1
Max Operating Fre-
quency
FMAX
VCC = 4.5V
1
1
Setup Time Data to
Clock
TSU
VCC = 4.5V
1
1
Hold Time Data to
Clock
TH
VCC = 4.5V
1
1
Pulse Width Clock
TW
VCC = 4.5V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
-
-
12
18
5
5
16
24
MAX
60
60
10
10
12
18
30
20
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
Spec Number
653
518635
Specifications HCTS374MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
Applied Voltage = 0V or VCC, VCC = 5.5V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
6.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-6.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
Clock to Q
IIN
IOZ
+25
o
C
+25
o
C
±5
±50
µA
µA
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25
o
C
-
-
-
TPLH
TPHL
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
2
2
2
2
2
31
35
36
29
25
ns
ns
Enable to Output
TPZL
TPZH
ns
ns
Disable to Output
TPLZ,
TPHZ
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
5
PARAMETER
ICC
IOL/IOH
IOZL/IOZH
DELTA LIMIT
12µA
-15% of 0 Hour
±200nA
Spec Number
654
518635
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
