REVISIONS
LTR
A
B
C
DESCRIPTION
Add device type 02. Technical and editorial changes throughout.
Changes to 1.3 and 1.4. Update boilerplate. -rrp
Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535.
Changes to 1.5. - gt
DATE (YR-MO-DA)
96-03-25
99-06-09
03-09-24
APPROVED
M.A. FRYE
R. MONNIN
R. MONNIN
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
RICK OFFICER
C
1
C
2
C
3
C
4
C
5
C
6
C
7
C
8
C
9
C
10
C
11
C
12
C
13
C
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJESH PITHADIA
APPROVED BY
MICHAEL FRYE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, LOW POWER, OPERATIONAL
AMPLIFIER, MONOLITHIC SILICON
DRAWING APPROVAL DATE
95-08-30
AMSC N/A
REVISION LEVEL
C
SIZE
A
SHEET
CAGE CODE
67268
1 OF
14
5962-95670
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E169-03
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
D
89760
01
V
C
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
HS-2700ARH
HS-2700RH
Circuit function
Radiation hardened, D.I., low
power, operational amplifier
Radiation hardened, D.I., low
power, operational amplifier
Temperature range
-55°C to +125°C
-35°C to +125°C
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
G
Descriptive designator
GDIP1-T14 or CDIP2-T14
MACY1-X8
Terminals
14
8
Package style
Dual-in-line
Can
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95670
SHEET
C
2
1.3 Absolute maximum ratings. 1/
Voltage between +V
S
and -V
S
.................................................................
Differential input voltage (V
IND
).................................................................
Voltage at either input terminal ................................................................
Maximum package power dissipation (P
D
) at T
A
= +125°C:
Case C ................................................................................................
Case G ................................................................................................
Junction temperature (TJ) ........................................................................
+44 V
±18
V
+V
S
to -V
S
0.67 W 2/
0.31 W 2/
+175°C
Storage temperature range ..................................................................... -65°C to +150°C
Lead temperature (soldering, 10 seconds) ............................................. +275°C
Thermal resistance, junction-to-case (θJC):
Case C ................................................................................................ 20°C/W
Case G ................................................................................................ 70°C/W
Thermal resistance, junction-to-ambient (θJA):
Case C ................................................................................................ 75°C/W
Case G ................................................................................................ 160°C/W
1.4 Recommended operating conditions.
Supply voltage range (±V
S
) .....................................................................
Common mode input voltage (V
INCM
) .......................................................
Load resistance (R
L
) ................................................................................
Ambient operating temperature range (TA):
Device type 01 ......................................................................................
Device type 02 ......................................................................................
1.5 Radiation features.
Maximum total dose available (dose rate = 50 –300 rads (Si)/s) ............... 10 Krads (Si) 3/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
±15
V
≤
½ (+V
S
- -V
S
)
≥
2 kΩ
-55°C to +125°C
-35°C to +125°C
1/
2/
3/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:
13.3 mW/°C for case C and 6.3 mW/°C for case G.
These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883, method 1019, condition A.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95670
SHEET
C
3
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
MIL-STD-1835
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103
MIL-HDBK-780
-
-
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
-
-
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95670
SHEET
C
4
TABLE I. Electrical performance characteristics.
Conditions 1/
unless otherwise specified
Test
Symbol
Device
type
All
Group A
subgroups
1
2, 3
-3
-5
-5
Limits
Min
Max
+3
+5
+5
+20
+50
+50
+20
+50
+50
+10
+30
+30
Unit
Input offset voltage
VIO
VCM = 0 V
2/
mV
M, D 3/
Input bias current
+I
IB
VCM = 0 V, +R
S
= 10 kΩ,
-R
S
= 100
Ω
2/
M, D 3/
-I
IB
VCM = 0 V, +R
S
= 100
Ω,
-R
S
= 10 kΩ
2/
M, D 3/
Input offset current
I
IO
VCM = 0 V, +R
S
= 10 kΩ,
-R
S
= 10 kΩ
2/
M, D 3/
Large signal voltage
gain
+A
VOL
V
OUT
= 0 V and +10 V 2/
R
L
= 2 kΩ
M, D 3/
-A
VOL
V
OUT
= 0 V and -10 V 2/
R
L
= 2 kΩ
M, D 3/
Common mode
rejection ratio
+CMRR
∆V
CM
= +10 V 2/
+V
S
= +5 V, -V
S
= -25 V,
V
OUT
= -10 V
M, D 3/
∆V
CM
= -10 V 2/
+V
S
= +25 V, -V
S
= -5 V,
V
OUT
= +10 V
M, D 3/
All
All
All
All
1
1
2, 3
1
1
2, 3
1
1
2, 3
1
1
2, 3
1
1
2, 3
1
1, 2, 3
-20
-50
-50
-20
-50
-50
-10
-30
-30
200
100
100
200
100
100
86
nA
nA
kV/V
dB
1
1, 2, 3
86
86
-CMRR
1
86
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95670
SHEET
C
5
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