HM628512BFP Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-1078B (Z)
Rev. 2.0
Nov. 23, 1999
Description
The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged
in standard 32-pin SOP.
Features
•
Single 5 V supply
•
Access time: 55/70 ns (max)
•
Power dissipation
Active: 50 mW/MHz (typ)
Standby: 2 mW (max)
•
Completely static memory. No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly TTL compatible: All inputs and outputs
Ordering Information
Type No.
HM628512BFP-5
HM628512BFP-7
Access time
55 ns
70 ns
Package
525-mil 32-pin plastic SOP (FP-32D)
HM628512BFP Series
Pin Arrangement
32-pin SOP
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top view)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
Pin Description
Pin name
A0 to A18
I/O0 to I/O7
CS
OE
WE
V
CC
V
SS
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
2
HM628512BFP Series
Block Diagram
V
CC
V
SS
•
•
•
•
•
A18
A16
A1
A0
A2
A12
A14
A3
A7
A6
Row
Decoder
Memory Matrix
1,024
×
4,096
I/O0
Input
Data
Control
I/O7
•
•
Column I/O
Column Decoder
•
•
A10 A4 A5
A13 A17A15A8 A9 A11
•
•
CS
WE
OE
Timing Pulse Generator
Read/Write Control
3
HM628512BFP Series
Function Table
WE
×
H
H
L
L
CS
H
L
L
L
L
OE
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note:
×:
H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +7.0
–0.5*
1
to V
CC
+ 0.3*
2
1.0
–20 to +70
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. –3.0 V for pulse half-width
≤
30 ns
2. Maximum voltage is 7.0 V
Recommended DC Operating Conditions
(Ta = –20 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
4.5
0
2.2
–0.3
*1
Typ
5.0
0
—
—
Max
5.5
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
1. –3.0 V for pulse half-width
≤
30 ns
4
HM628512BFP Series
DC Characteristics
(Ta = –20 to +70°C, V
CC
= 5 V
±10%
, V
SS
= 0 V)
Parameter
Input leakage current
Output leakage current
Operating power supply current: DC
Operating power supply current
Symbol
|I
LI
|
|I
LO
|
I
CC
I
CC1
Min
—
—
—
—
Typ*
1
Max
—
—
8
40
1
1
15
60
Unit
µA
µA
mA
mA
Test conditions
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
IH
or
WE
= V
IL
, V
I/O
= V
SS
to V
CC
CS
= V
IL
,
others = V
IH
/V
IL
, I
I/O
= 0 mA
Min cycle, duty = 100%
CS
= V
IL
, others = V
IH
/V
IL
I
I/O
= 0 mA
Cycle time = 1
µs,
duty = 100%
I
I/O
= 0 mA,
CS
≤
0.2 V
V
IH
≥
V
CC
– 0.2 V, V
IL
≤
0.2 V
CS
= V
IH
Vin
≥
0 V,
CS
≥
V
CC
– 0.2 V
I
OL
= 2.1 mA
I
OH
= –1.0 mA
Operating power supply current
I
CC2
—
10
20
mA
Standby power supply current: DC
I
SB
—
—
—
2.4
1
300
—
—
3
400
0.4
—
mA
µA
V
V
Standby power supply current (1): DC I
SB1
Output low voltage
Output high voltage
Note:
V
OL
V
OH
1. Typical values are at V
CC
= 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance*
1
Input/output capacitance*
1
Note:
Symbol
Cin
C
I/O
Typ
—
—
Max
8
10
Unit
pF
pF
Test conditions
Vin = 0 V
V
I/O
= 0 V
1. This parameter is sampled and not 100% tested.
5
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