Agilent 1N5711, 1N5712, 5082-2300
Series, 5082-2800 Series, 5082-2900
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Up to 70 V
• Matched Characteristics
Available
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
Outline 15
0.41 (.016)
0.36 (.014)
4.32 (.170)
3.81 (.150)
CATHODE
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 .................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835 ............................................................................ -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE
= 25
°
C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. V
BR
2
Package Characteristics
Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish .............................................................................. 95-5% Tin-Lead
Max. Soldering Temperature ................................................ 260°C for 5 sec
Min. Lead Strength .................................................................... 4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................ 2.0 nH
2300 Series, 2900: .............................................................................. 3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at T
A
= 25
°
C
General Purpose Diodes
Min.
Breakdown
Voltage
V
BR
(V)
70
70
20
20
15
8*
I
R
= 10
µA
*I
R
= 100
µA
Max.
Forward
Voltage
V
F
(mV)
410
410
410
550
410
340
I
F
= 1 mA
V
F
= 1 V Max.
at Forward
Current
I
F
(mA)
15
15
35
35
20
10*
*V
F
= 0.45 V
Max.
Reverse Leakage
Current
I
R
(nA) at V
R
(V)
200
200
100
150
100
100
50
50
15
16
8
1
Max.
Capaci-
tance
C
T
(pF)
2.0
2.0
1.2
1.2
1.2
1.0
V
R
= 0 V
f =1.0 MHz
Part
Number
5082-2800
1N5711
5082-2810
1N5712
5082-2811
5082-2835
Test
Conditions
Package
Outline
15
15
15
15
15
15
Note:
Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
3
Low 1/f (Flicker) Noise Diodes
Part
Number
5082-
2303
2900
Test
Conditions
Min.
Breakdown
Voltage
V
BR
(V)
20
10
I
R
= 10
µA
Max.
Forward
Voltage
V
F
(mV)
400
400
I
F
= 1 mA
V
F
= 1 V Max.
at Forward
Current
I
F
(mA)
35
20
Max.
Reverse Leakage
Current
I
R
(nA) at V
R
(V)
500
100
15
5
Max.
Capaci-
tance
C
T
(pF)
1.0
1.2
V
R
= 0 V
f =1.0 MHz
Package
Outline
15
15
Note:
Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.
Matched Pairs and Quads
Basic
Part Number
5082-
2900
2800
5082-2804
∆V
F
= 20 mV
5082-2805
∆V
F
= 20 mV
5082-2826
∆V
F
= 10 mV
∆C
O
= 0.1 pF
5082-2080
∆V
F
= 10 mV
∆C
O
= 0.1 pF
Matched
Pair
Unconnected
Matched
Quad
Unconnected
Batch
Matched
[1]
Test Conditions
∆V
F
at I
F
= 1.0, 10 mA
∆V
F
at I
F
= 0.5, 5 mA
*I
F
= 10 mA
∆C
O
at f = 1.0 MHz
∆V
F
at I
F
= 10 mA
∆C
O
at f = 1.0 MHz
∆V
F
at I
F
=10 mA
∆C
O
at f = 1.0 MHz
2811
2835
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
Units
V
pF
eV
A
A
Ω
5082-2800
75
1.6
0.69
10E - 5
2.2 x 10E - 9
1.08
25
5082-2810
25
0.8
0.69
10E - 5
1.1 x 10E - 9
1.08
10
5082-2811
18
1.0
0.69
10E -5
0.3 x 10E - 8
1.08
10
5082-2835
9
0.7
0.69
10E - 5
2.2 x 10E - 8
1.08
5
5082-2303
25
0.7
0.69
10E - 5
7 x 1.0E-9
1.08
10
5082-2900
10
1.1
0.69
10E - 5
10E-8
1.08
15
P
B
P
T
M
V
0.6
2
0.5
0.6
2
0.5
0.6
2
0.5
0.56
2
0.5
0.64
2
0.5
0.64
2
0.5
4
Typical Parameters
100
10.000
1000
10
1,000
75
50
100°C
1
50°C
25°C
0°C
–50°C
100
R
D
- DYNAMIC RESISTANCE (Ω)
I
F
- FORWARD CURRENT (mA)
100
I
R
(nA)
25
T
A
= 25°C
100
0.1
10
0.01
0
0.10
0.20
0.30
0.40
0.50
0.60
1
0
5
V
BR
(V)
10
15
10
0.01
0
10
100
V
F
– FORWARD VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2300
Series and 5082-2900 Schottky Diodes.
1.2
Figure 2. 5082-2300 Series Typical
Reverse Current vs. Reverse Voltage
at Various Temperatures.
50
Figure 3. 5082-2300 Series and 5082-2900
Typical Dynamic Resistance (R
D
) vs.
Forward Current (I
F
).
100,000
150
125
100
1000
75
50
100
25
10
0
T
A
=
°C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
- FORWARD CURRENT (mA)
C
T
- CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0
4
8
12
16
20
V
R
- REVERSE VOLTAGE (V)
5082-2900
5082-2303
10
5
1
0.5
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
0.1
0.05
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
I
R
- REVERSE CURRENT (nA)
10,000
V
F
- FORWARD VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
Figure 4. 5082-2300 and 5082-2900
Typical Capacitance vs. Reverse
Voltage.
Figure 5. I-V Curve Showing Typical
Temperature Variation for 5082-2800
or 1N5711 Schottky Diodes.
Figure 6. (5082-2800 OR 1N5711)
Typical Variation of Reverse Current
(I
R
) vs. Reverse Voltage (V
R
) at
Various Temperatures.
10,000
12.0
100
I
F
- FORWARD CURRENT (mA)
1.5
10
I
R
- REVERSE CURRENT (nA)
C
T
- CAPACITANCE (pF)
150
125
1000
100
75
100
50
25
10
T
A
=
°C
1.0
1.0
+150°C
+100°C
+50°C
0.5
0.1
+25°C
0°C
–50°C
0
0
10
20
30
40
50
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
0
5
10
15
20
25
30
V
R
- REVERSE VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
Figure 7. (5082-2800 or 1N5711)
Typical Capacitance (C
T
) vs. Reverse
Voltage (V
R
).
Figure 8. I-V Curve Showing Typical
Temperature Variation for the 5082-
2810 or 1N5712 Schottky Diode.
Figure 9. (5082-2810 or IN5712)
Typical Variation of Reverse Current
(I
R
) vs. Reverse Voltage (V
R
) at
Various Temperatures.
5
Typical Parameters,
continued
100
I
F
- FORWARD CURRENT (mA)
100,000
150
100
1000
50
I
F
- FORWARD CURRENT (mA)
I
R
- REVERSE CURRENT (nA)
100
10
10,000
10
1.0
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
- FORWARD VOLTAGE (V)
1.0
100
25
T
A
=
°C
0.1
0.1
10
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
0.01
1
0.01
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
V
R
- REVERSE VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811
Schottky Diode.
100,000
I
R
- REVERSE CURRENT (nA)
Figure 11. (5082-2811) Typical Variation
of Reverse Current (I
R
) vs. Reverse
Voltage (V
R
) at Various Temperatures.
11.4
Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
1000
R
D
- DYNAMIC RESISTANCE (Ω)
5082-2800, 1N5711
+150°C
+125°C
+100°C
1000
+75°C
100
+50°C
+25°C
10
C
T
- CAPACITANCE (pF)
1.2
1.0
0.8
0.6
0.4
0.2
0
5082-2810/2811
IN5712
5082-2835
10,000
100
5082-2811
5082-2811
1N5712
10
5082-2835
1
0
2
4
6
8
10
1
0
1
2
3
4
5
6
0
2
4
6
8
10
V
R
- REVERSE VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Figure 13. (5082-2835) Typical Variation
of Reverse Current (I
R
) vs. Reverse
Voltage (V
R
) at Various Temperatures.
Figure 14. Typical Capacitance (C
T
) vs.
Reverse Voltage (V
R
).
Figure 15. Typical Dynamic Resistance
(R
D
) vs. Forward Current (I
F
).
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