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HM624100H: 产品描述4M High Speed SRAM (1-Mword x 4-bit); 文件大小71KB，共13页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HM624100H概述

4M High Speed SRAM (1-Mword x 4-bit)

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HM624100H Series

4M High Speed SRAM (1-Mword

4-bit)

ADE-203-789D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword

4-bit. It has realized high speed

access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed and high density

memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ

for high density surface mounting.

Features

•

Single 5.0 V supply : 5.0 V

10 %

•

Access time 10/12/15 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current : 200/180/160 mA (max)

•

TTL standby current : 70/60/50 mA (max)

•

CMOS standby ccurrent : 5 mA (max)

: 1.2 mA (max) (L-version)

•

Data retension current : 0.8 mA (max) (L-version)

•

Data retension voltage : 2.0 V (min) (L-version)

•

Center V

and V

type pinout

HM624100H相似产品对比

	HM624100H	HM624100HJP-15	HM624100HLJP-10	HM624100HJP-10	HM624100HJP-12	HM624100HLJP-12	HM624100HLJP-15
描述	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)
零件包装代码	-	SOJ	SOJ	SOJ	SOJ	SOJ	SOJ
包装说明	-	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44
针数	-	32	32	32	32	32	32
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow
最长访问时间	-	15 ns	10 ns	10 ns	12 ns	12 ns	15 ns
I/O 类型	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	-	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32
长度	-	20.71 mm	20.71 mm	20.71 mm	20.71 mm	20.71 mm	20.71 mm
内存密度	-	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi
内存集成电路类型	-	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	-	4	4	4	4	4	4
功能数量	-	1	1	1	1	1	1
端子数量	-	32	32	32	32	32	32
字数	-	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	-	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	-	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	-	1MX4	1MX4	1MX4	1MX4	1MX4	1MX4
输出特性	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	-	SOJ	SOJ	SOJ	SOJ	SOJ	SOJ
封装等效代码	-	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	-	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	-	3.76 mm	3.76 mm	3.76 mm	3.76 mm	3.76 mm	3.76 mm
最小待机电流	-	4.5 V	2 V	4.5 V	4.5 V	2 V	2 V
最大压摆率	-	0.16 mA	0.2 mA	0.2 mA	0.18 mA	0.18 mA	0.16 mA
最大供电电压 (Vsup)	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	-	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	-	YES	YES	YES	YES	YES	YES
技术	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	-	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
端子节距	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	-	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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