DDR SDRAM Unbuffered Module
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | DIMM |
包装说明 | DIMM, DIMM184 |
针数 | 184 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 0.75 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 133 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-XDMA-N184 |
内存密度 | 9663676416 bi |
内存集成电路类型 | DDR DRAM MODULE |
内存宽度 | 72 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 184 |
字数 | 134217728 words |
字数代码 | 128000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 128MX72 |
输出特性 | 3-STATE |
封装主体材料 | UNSPECIFIED |
封装代码 | DIMM |
封装等效代码 | DIMM184 |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
电源 | 2.5 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
自我刷新 | YES |
最大待机电流 | 0.108 A |
最大压摆率 | 3.825 mA |
最大供电电压 (Vsup) | 2.7 V |
最小供电电压 (Vsup) | 2.3 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | NO LEAD |
端子节距 | 1.27 mm |
端子位置 | DUAL |
M381L5623MTM-CA2 | M381L5623MTN | M381L5623MTM-CB0 | M381L5623MTM-CB3 | M368L5623MTN-CB3 | M368L5623MTN-CA2 | M368L5623MTN-CB0 | M368L5623MTN | |
---|---|---|---|---|---|---|---|---|
描述 | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module | DDR SDRAM Unbuffered Module |
是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | - |
厂商名称 | SAMSUNG(三星) | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - |
零件包装代码 | DIMM | - | DIMM | DIMM | DIMM | DIMM | DIMM | - |
包装说明 | DIMM, DIMM184 | - | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | - |
针数 | 184 | - | 184 | 184 | 184 | 184 | 184 | - |
Reach Compliance Code | compli | - | compli | compli | compli | compli | compli | - |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - |
访问模式 | FOUR BANK PAGE BURST | - | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | - |
最长访问时间 | 0.75 ns | - | 0.75 ns | 0.7 ns | 0.7 ns | 0.75 ns | 0.75 ns | - |
其他特性 | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - |
最大时钟频率 (fCLK) | 133 MHz | - | 133 MHz | 166 MHz | 166 MHz | 133 MHz | 133 MHz | - |
I/O 类型 | COMMON | - | COMMON | COMMON | COMMON | COMMON | COMMON | - |
JESD-30 代码 | R-XDMA-N184 | - | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 | - |
内存密度 | 9663676416 bi | - | 9663676416 bi | 9663676416 bi | 8589934592 bi | 8589934592 bi | 8589934592 bi | - |
内存集成电路类型 | DDR DRAM MODULE | - | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | - |
内存宽度 | 72 | - | 72 | 72 | 64 | 64 | 64 | - |
功能数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | - |
端口数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | - |
端子数量 | 184 | - | 184 | 184 | 184 | 184 | 184 | - |
字数 | 134217728 words | - | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | - |
字数代码 | 128000000 | - | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | - |
工作模式 | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - |
最高工作温度 | 70 °C | - | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | - |
组织 | 128MX72 | - | 128MX72 | 128MX72 | 128MX64 | 128MX64 | 128MX64 | - |
输出特性 | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - |
封装主体材料 | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - |
封装代码 | DIMM | - | DIMM | DIMM | DIMM | DIMM | DIMM | - |
封装等效代码 | DIMM184 | - | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | - |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
封装形式 | MICROELECTRONIC ASSEMBLY | - | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | - |
电源 | 2.5 V | - | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | - |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
刷新周期 | 8192 | - | 8192 | 8192 | 8192 | 8192 | 8192 | - |
自我刷新 | YES | - | YES | YES | YES | YES | YES | - |
最大待机电流 | 0.108 A | - | 0.108 A | 0.108 A | 0.096 A | 0.096 A | 0.096 A | - |
最大压摆率 | 3.825 mA | - | 3.825 mA | 4.41 mA | 3.92 mA | 3.4 mA | 3.4 mA | - |
最大供电电压 (Vsup) | 2.7 V | - | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | - |
最小供电电压 (Vsup) | 2.3 V | - | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | - |
标称供电电压 (Vsup) | 2.5 V | - | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | - |
表面贴装 | NO | - | NO | NO | NO | NO | NO | - |
技术 | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS | - |
温度等级 | COMMERCIAL | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - |
端子形式 | NO LEAD | - | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | - |
端子节距 | 1.27 mm | - | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | - |
端子位置 | DUAL | - | DUAL | DUAL | DUAL | DUAL | DUAL | - |
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