HY23V28101
Description
8MX16BIT
CMOS MASK ROM
The HY23V28101 high performance read only memory is organized either as 8,388,608 x16 bit (word mode)
and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of
its asynchronous operation. It is designed to be suitable for use in program memory of game machine, data
memory and entertainments. The HY23V28101 is packaged in a 44SOP provides polarity programmable CE
and OE buffer as user option mode.
Key features
• Word Mode : 8,388,608 X 16 bit
• Single 3.3V power supply operation
• Access Time : 100/120ns (Max)
• Standby Current : 50uA(Max)
• Operating Current : 35mA(Max)
• TTL compatible inputs and outputs
• 3-State outputs for wired-OR expansion
• Programmable CE or OE pin
•Fully static operation
• High reliability
• Package
HY23V28101S : 44pin Plastic SOP(500mil)
Pin Description
Pin
A0~A22
Q0~Q15
CE/CE
OE/OE
VCC
VSS
Function
Address Inputs
Data Outputs
Chip Enable Input
Output Enable Input
Power Supply(+3.3V)
Ground
* User selectable polarity
• CEB : CE/CEB , OEB : OE/OEB
Pin Configuration
A21
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CEB
VSS
OEB
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
44SOP
33
32
31
30
29
28
27
26
25
24
23
A20
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
A22
VSS
Q15
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
HY23V28101S
Rev0 Page 1 of 5
HY23V28101
Absolute Maximum Ratings
Symbol
T
A
T
STG
V
CC
V
OUT
V
IN
Parameter
Ambient Operating Temperature
Storage Temperature
Supply Voltage to Ground Potential
Output Voltage
Input Voltage
Rating
-10 ~ 80
-55 ~ 150
-0.3 ~ 4.5
-0.3~Vcc+0.3
-0.3~Vcc+0.3
8MX16BIT
CMOS MASK ROM
Unit
O
C
C
O
V
V
V
Stress above those listed under “absolute maximum ratings” may cause permanent damage to the
device. These are stress ratings only. Functional operation of this device at these or any other
conditions above those indicated in the operational sections of this specification is not implied and
exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
0
2.2
-0.3
Typ
3.3
0
Max
3.6
0
Vcc+0.3
0.8
Unit
V
V
V
V
DC Electrical Characteristics(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
V
OH
V
OL
I
IL
I
OL
I
CC
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Supply Current
(tRC=100ns)
I
SB1
I
SB2
Standby Current(TTL)
Standby Current(CMOS)
Condition
I
OH
=-0.4mA
I
OL
=2.1mA
Min
2.4
Typ
Max
Unit
V
0.4
10
¡
V
uA
uA
mA
uA
uA
V
IN
=0V to V
CC
¡
V
OUT
=0V to V
CC
CEB=OEB=V
IL
All Output Open
CEB=V
IH
, all Output Open
CEB=V
CC
, all Output Open
10
35
500
50
Rev0 Page 3 of 5
HY23V28101
Capacitance(T
A
=25
O
C , f=1.0MHz)
Symbol
C
I
C
O
Parameter
Input Capacitance
Output Capacitance
Condition
VIN = 0V
VOUT = 0V
Min
8MX16BIT
CMOS MASK ROM
Max
10
10
Unit
pF
pF
Capacitance is periodically sampled and not 100% tested
Function Table
CE/CE
L/H
OE/OE
X
H/L
H/L
L/H
Output Disable
High Z
Mode
Standby
Operating
Data
High Z
DOUT
Active
Power
Standby
AC Characteristics(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
tRC
tACE
tAA
tAOE
tOH
tHZ
tLZ
Parameter
Min
Read cycle time
Chip enable access time
Address access time
Output enable access time
Output hold time from address change
Output or chip disable to output High-Z
Output or chip Enable to output Low-Z
10
0
20
10
100
100
100
50
0
20
Max
Min
120
120
120
60
Max
ns
ns
ns
ns
ns
ns
ns
100ns
120ns
Unit
AC Test Condition
• Input pulse level
• Input rise and fall time
• Input and output timing level
• Output load
0.4V to 2.4V
10ns
1.5V
1 TTL gate and CL=100pF
Rev0 Page 4 of 5
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