PD - 94247
HEXFET
®
POWER MOSFET
THRU-HOLE (TO-254AA)
IRF5M5210
100V, P-CHANNEL
Product Summary
Part Number
IRF5M5210
BVDSS
-100V
R
DS(on)
0.07Ω
I
D
-34A
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-254AA
Features:
n
n
n
n
n
n
n
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
-34
-21
-136
125
1.0
±20
520
-21
12.5
3.4
-55 to 150
W
W/°C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
For footnotes refer to the last page
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1
06/13/01
IRF5M5210
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
—
-0.12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.07
-4.0
—
-25
-250
-100
100
180
25
100
28
150
100
120
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -21A
➃
VDS = VGS, ID = -250µA
VDS = -15V, IDS = -21A
➃
VDS = -100V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -21A
VDS = -80V
VDD = -50V, ID = -21A,
VGS =-10V, RG = 2.5Ω
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV
DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
10
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2730
824
465
—
—
—
pF
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-34
-136
-1.6
260
1.8
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -21A, VGS = 0V
➃
Tj = 25°C, IF = -21A, di/dt
≥
100A/µs
VDD
≤
-30V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.0
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5M5210
1000
-I
D
, Drain-to-Source Current (A)
100
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
1000
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
10
-4.5V
1
-4.5V
1
0.1
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -34A
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
2.0
100
1.5
T
J
= 150
°
C
1.0
10
0.5
1
4
6
8
15
V DS = -50V
20µs PULSE WIDTH
10
12
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF5M5210
6000
5000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -21A
16
C, Capacitance (pF)
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
4000
Ciss
12
3000
C
oss
2000
8
C
rss
1000
4
0
1
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
240
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
T
J
= 25
°
C
1
-I D, Drain-to-Source Current (A)
100
10
1
ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
1
0ms
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
-V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF5M5210
35
V
DS
30
R
D
V
GS
-I
D
, Drain Current (A)
D.U.T.
+
25
20
15
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
5
V
GS
10%
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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R
G
V
DD
5
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