PD-94695F
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLF770Z4 100K Rads (Si)
0.6Ω
IRHLF730Z4
300K Rads (Si)
0.6Ω
I
D
1.6A*
1.6A*
2N7621T2
IRHLF770Z4
60V, N-CHANNEL
TECHNOLOGY
T0-39
International Rectifier’s R7
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLF7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ V GS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.6*
1.0*
6.4
5.0
0.04
±10
6.9
1.6
0.5
3.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the complimentary P-Channel logic level power MOSFET - IRHLF7970Z4
For footnotes refer to the last page
www.irf.com
09/16/10
1
IRHLF770Z4, 2N7621T2
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
1.0
—
1.1
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.08
—
—
-3.5
—
—
—
—
—
—
—
—
—
—
—
—
7.0
—
—
0.60
2.0
—
—
1.0
10
100
-100
2.6
0.8
1.5
6.5
14
30
13
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 1.0A
Ã
VDS = VGS, ID = 250µA
V DS = 10V, IDS = 1.0A
Ã
VDS = 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.6A
VDS = 30V
VDD = 30V, ID = 1.6A,
VGS = 4.5V, RG = 24Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nC
ns
nH
Measured from Drain lead (6mm/0.25in
from package)to Source lead (6mm/0.25in
from package)with Source wire interanally
bonded from Source pin to Drain pad
Ciss
Coss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
152
39
1.6
—
—
—
17
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 5.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
1.6*
6.4
1.2
78
150
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 1.6A, VGS = 0V
Ã
Tj = 25°C, IF = 1.6A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Derated to match the complimentary P-Channel logic level power MOSFET - IRHLF7970Z4
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
25
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHLF770Z4, 2N7621T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Up to 300K Rads(Si)
1
Min
60
1.0
—
—
—
—
—
Max
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 1.0A
V
GS
= 0V, I
D
= 1.6A
—
2.0
100
-100
1.0
0.6
1.2
1. Part numbers IRHLF770Z4, IRHLF730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
62 ± 5%
85 ± 5%
2
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
40
-6V
60
30
-
-7V
35
-
-
70
60
50
40
30
20
10
0
0
-1
-2
-3
-4
-5
-6
-7
Bias VGS (V)
Bias VDS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLF770Z4, 2N7621T2
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
1
ID, Drain-to-Source Current (A)
VGS
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
10
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
TOP
1
2.25V
2.25V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 1.6A
1.5
ID, Drain-to-Source Current (
Α)
TJ = 150°C
T J = 25°C
1
1.0
0.5
0
2
2.5
3
VDS = 25V
15
60µs PULSE WIDTH
3.5
4
4.5
5
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLF770Z4, 2N7621T2
RDS(on), Drain-to -Source On Resistance
(Ω)
3.5
3
2.5
2
1.5
1
0.5
0
2
3
4
5
6
7
8
9
ID = 1.6A
RDS(on), Drain-to -Source On Resistance (
Ω)
4
1.2
1.0
T J = 150°C
0.8
T J = 150°C
T J = 25°C
0.6
T J = 25°C
0.4
Vgs = 4.5V
0.2
0
1
2
3
4
5
6
7
ID, Drain Current (A)
10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
3.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.5
70
2.0
1.5
60
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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