Planar Back (Tunnel) Diodes
MBD Series
Description
The MDB series of back (tunnel) diodes are fabricated
on germanium substrates using passivated, planar
construction and gold metallization for reliable operation up
to +110 °C. Unlike the standard tunnel diode I
P
is minimized
for detector operation and offered in five nominal values
with varying degrees of sensitivity and video impedance.
The back detector is generally operated with zero bias and
is known for its exellent temperature stability and fast video
rise times.
Features
•
•
•
•
Zero bias operation
Exellent temperature stability
Low Video Impedance
Screening per MIL-PRF-19500
and MIL-PRF-35834 available.
Absolute Maximum Ratings
Parameters
Input Power
Operating Temperature
Storage Temperature
Soldering Temperature
Chip
Packaged
Rating
+1 dBm CW or Pulsed in a tuned detector
4
-65
°C
to +1
°C
10
-65
°C
to +1
°C
25
See chip assembly instructions on page 8
+230
°C
for 5 seconds (must be hand soldered)
Chip
Electrical Specifications,
T
A
= 25
°C
I
P
C
J
MAX
μA
200
300
400
500
600
γ
TYP
mV / mW
1,000
750
500
275
250
R
V
TYP
Ω
180
1
30
80
65
60
I
P
/ I
V
MIN
2.5
2.5
2.5
2.5
2.5
V
R
MIN
mV
420
410
400
400
400
I
R
=
500
μA
V
F
MAX
mV
1
35
1
30
1
25
1
20
1
10
I
F
= 3 mA
Model
MBD1057-C18
MBD2057-C18
MBD3057-C18
MBD4057-C18
MBD5057-C18
Test Conditions
MIN
μA
100
200
300
400
500
MAX
pF
0.30
0.30
0.30
0.30
0.30
V
R
= V
V
F=
100 MHz
Package
C18
C18
C18
C18
C18
P
IN
= -20 dBm
R
L
= 10 KΩ F = 10 GHz
Revision Date: 1
2/01/05
Planar Back (Tunnel) Diodes
MBD Series
Back Diode Perameters
I
3mA
Diode Equivalent Circuit
L
S
PACKAGE
V
R
V
v
I
V
V
F
I
p
500μA
V
C
p
R
j
C
j
R
S
R
V
≅R
S
+ R
j
C
T
=C
p
+ C
j
@
100 MHz
Package
Electrical Specifications,
T
A
= 25
°C
I
P
C
T
MAX
μA
200
200
200
200
300
300
300
300
400
400
400
400
500
500
500
500
600
600
600
600
Model
MBD1057-E28 / 28X
MBD1057-H20
MBD1057-T54
MBD1057-T80
MBD2057-E28 / 28X
MBD2057-H20
MBD2057-T54
MBD2057-T80
MBD3057-E28 / 28X
MBD3057-H20
MBD3057-T54
MBD3057-T80
MBD4057-E28 / 28X
MBD4057-H20
MBD4057-T54
MBD4057-T80
MBD5057-E28 / 28X
MBD5057- H20
MBD5057- T54
MBD5057- T80
Test Conditions
γ
TYP
mV / mW
1,000
1,000
1,000
1,000
750
750
750
750
500
500
500
500
275
275
275
275
250
250
250
250
MIN
μA
100
100
100
100
200
200
200
200
300
300
300
300
400
400
400
400
500
500
500
500
MAX
pF
0.40
0.50
0.55
0.65
0.40
0.50
0.55
0.65
0.45
0.55
0.60
0.70
0.50
0.60
0.65
0.75
0.55
0.65
0.70
0.80
V
R
= V
V
F= 100 MHz
R
V
TYP
Ω
180
180
180
180
1
30
1
30
1
30
1
30
80
80
80
80
65
65
65
65
60
60
60
60
I
P
/ I
V
MIN
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
V
R
MIN
mV
420
420
420
420
410
410
410
410
400
400
400
400
400
400
400
400
400
400
400
400
I
R
=
500
μA
V
F
MAX
mV
1
35
1
35
1
35
1
35
1
30
1
30
1
30
1
30
1
25
1
25
1
25
1
25
1
20
1
20
1
20
1
20
1
10
1
10
1
10
1
10
I
F
= 3 mA
Package
E28 / 28X
H20
T54
T80
E28 / 28X
H20
T54
T80
E28 / 28X
H20
T54
T80
E28 / 28X
H20
T54
T80
E28 / 28X
H20
T54
T80
P
IN
= -20 dBm
R
L
= 10 KΩ F =10 GHz
2
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 1
2/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance,
T
A
= 25
°C
Video Resistance vs. Input Power
200
F =10 GHz
MBD2057
150
R
v
(Ω)
100
MBD5057
50
0
_ 30
_ 20
_ 10
P
IN
(dBm)
0
+
10
Video Impedance & Sensitivity vs. Peak Current
1000
F = 1 GHz
0
R
L
= 1 KΩ
0
P
IN
= -20 dBm
200
750
150
γ
(mV/mW)
γ
500
100
R
V
250
50
0
0
100
200
I
P
(μA)
0
300
400
500
R
V
(Ω)
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
3
Revision Date: 1
2/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance,
T
A
= 25
°C,
Output Voltage Vs. Input Power
300
200
F = 1 GHz
0
R
L
= 1
0KΩ
100
MBD1057
MBD2057
10
V
OUT
(mV)
MBD3057
MBD4057
MBD5057
1
0.1
–40
–35
–30
–25
–20
–15
–10
–5
0
5
10
P
IN
(dBm)
1 GHz RF Detector Test Circuit
0
TUNER
4
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 1
2/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance,
T
A
= 25
°C,
MDB2057
Output Voltage vs. Input Power
300
200
R
L
= 10KΩ
F = 1 GHz
0
100
R
L
= 1KΩ
R
L
= 500Ω
R
L
= 100Ω
R
L
= 50Ω
R
L
= 10Ω
10
V
OUT
(mV)
1
0.1
–40
–35
–30
–25
–20
–15
–10
–5
0
5
10
P
IN
(dBm)
Output Voltage vs. Temperature
300
200
R
L
= 10KΩ
+ 100° C
– 55° C
100
F = 1 GHz
0
R
L
= 100Ω
V
OUT
(mV)
10
1
0.1
–40
–35
–30
–25
–20
–15
–10
–5
0
5
10
P
IN
(dBm)
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
5
Revision Date: 1
2/01/05
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
