Bulletin I27101 rev. B 04/98
IRK. SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
INT-A-pakä Power Modules
135 A
140 A
160 A
Description
These series of INT-A-paks modules uses high voltage
power thyristors/ diodes in seven basic configurations.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built. They can be interconnected to
form single phase or three phase bridges or as AC-
switches when modules are connected in anti-parallel.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/ V
RRM
T
J
range
IRK.135.. IRK.141.. IRK.161..
IRK.136.. IRK.142.. IRK.162.. Units
135
85
300
3200
3360
51.5
47
515
140
85
310
4750
5000
113
103
1130
160
85
355
5100
5350
131
119
1310
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
°C
up to 1600 up to 2000 up to 1600
- 40 to 130
- 40 to 125
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1
IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
04
08
12
14
16
IRK.141, IRK.142
08
12
16
18
20
V
RRM
, maximum repetitive
peak reverse voltage
V
400
800
1200
1400
1600
800
1200
1600
1800
2000
V
RSM
, maximum non-repetitive
peak reverse voltage
V
500
900
1300
1500
1700
900
1300
1700
1900
2100
I
RRM
max.
@ 150°C
mA
50
IRK.135, IRK.136
IRK.161, IRK.162
50
Forward Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Maximum peak, one-cycle
on-state, non-repetitive
surge current
IRK.135.
IRK.136.
135
85
300
3200
3360
2700
2800
IRK.141.
IRK.142.
140
85
310
4750
5000
4000
4200
113
103
80
73
1130
0.75
IRK.161.
IRK.162.
160
85
355
5100
5350
4300
4500
131
119
92
84
1310
0.79
Units Conditions
A
°C
A
A
as AC switch
t = 10ms
No voltage
180° conduction, half sine wave
t = 8.3ms reapplied
t = 10ms
100% V
RRM
Sine half wave,
Initial T
J
= T
J
max.
No voltage
t = 8.3ms reapplied
KA
2
s
t = 10ms
I
2
t
Maximum I
2
t for fusing
51.5
47
36
33
t = 8.3ms reapplied
t = 10ms
100% V
RRM
t = 8.3ms reapplied
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
(I >
π
x I
T(AV)
), @ T
J
max.
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
(I >
π
x I
T(AV)
), @ T
J
max.
V
I
FM
=
π
x I
F(AV)
, T
J
= max., 180°conduction
Av. power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
Anode supply = 12V initial I
T
= 30A, T
J
= 25°C
Anode supply = 12V resistive load = 1Ω gate
pulse: 10V, 100µs, T
J
= 25°C
I
2
√t
Maximum I
2
√t
for fusing
515
0.98
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
r
t2
V
FM
I
H
I
L
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum forward voltage drop
101
0.86
0.92
1.62
0.92
0.64
1.56
0.77
0.49
1.66
1.32
1.26
Maximum holding current
Maximum latching current
500
300
mA
mA
2
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
Switching
Parameter
t
d
t
r
t
q
Typical delay time
Typical rise time
Typical turn-off time
IRK.135.
IRK.136.
2.0
3.0
IRK.141.
IRK.142.
1.0
2.0
50 - 150
IRK.161.
IRK.162.
1.0
2.0
Units Conditions
µs
µs
µs
T
J
= 25
o
C Gate Current = 1A dIg/
dt
= 1A/µs
T
J
= 25
o
C Vd = 0,67% V
DRM
I
TM
= 300 A; -dI/dt = 15 A/µs; T
J
= T
J
max
V
r
= 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
Blocking
Parameter
I
RRM
I
DRM
V
INS
dv/
dt
Maximum peak reverse and
off-state leakage current
RMS isolation voltage
critical rate of rise of off-state
voltage
IRK.135.
IRK.136.
IRK.141.
IRK.142.
50
3000
1000
IRK.161.
IRK.162.
Units Conditions
mA
V
V/µs
T
J
= 150
o
C
50Hz, circuit to base, all terminals shorted,
t = 1s
T
J
= T
J
max., exponential to 67% rated V
DRM
Triggering
Parameter
P
GM
I
GM
-V
GT
V
GT
Max. peak gate power
IRK.135.
IRK.136.
5
1
2
5
4.0
3.0
2.0
350
200
100
0.25
10
300
IRK.141.
IRK.142.
10
2
3
5
4.0
3.0
2.0
350
200
100
0.30
10
500
IRK.161.
IRK.162.
10
2
3
5
4.0
3.0
2.0
350
200
100
0.30
10
500
Units Conditions
W
W
A
V
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
mA
V
mA
A/µs
@ T
J
= T
J
max., I
TM
= 400A rated V
DRM
applied
T
J
= 25°C
Anode supply = 12V, resistive
load; Ra = 1Ω
Anode supply = 12V, resistive
load; Ra = 1Ω
tp
≤
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
≤
5ms, T
J
= T
J
max.
P
G(AV)
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. required DC gate
voltage to trigger
I
GT
Max. required DC gate
current to trigger
V
GD
I
GD
di/
dt
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
0.20
0.17
0.035
4 to 6
4 to 6
500 (17.8)
0.17
K/W
K/W
Nm
DC operation, per junction
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
g (oz)
Lubricated threads.
IRK.135.
IRK.136.
-40 to 130
IRK.141.
IRK.142.
IRK.161.
IRK.162.
Units Conditions
°C
°C
-40 to 150
-40 to 150
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
wt
Mounting
torque ± 10%
IAP to heatsink
busbar to IAP
Approximate weight
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3
IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.135, IRK.136
IRK.141, IRK.142
IRK.161, IRK.162
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.019
0.020
0.020
90
o
0.026
0.027
0.027
60
o
0.037
0.037
0.037
30
o
0.060
0.060
0.060
Units
K/W
0.016
0.016
0.015
0.019
0.019
0.019
0.024
0.025
0.024
0.035
0.036
0.036
0.060
0.060
0.060
0.011
0.012
0.012
INT-A-paks Suitable for Current Source Inverters
Thyristor
V
DRM
V
RRM
1400
1400
1600
1600
1800
1800
2000
2000
1500
1500
1700
1700
1900
1900
2100
2100
Diode
V
RSM
V
RRM
V
RSM
2000
2000
2500
2500
2800
2800
3200
3200
I
T(AV)
/ I
F(AV)
@ T
C
135A
@ 85°C
IRKH135-14D20
IRKH136-14D20
IRKL135-14D20
IRKL136-14D20
IRKH135-16D25
IRKH135-16D25
IRKL136-16D25
IRKL136-16D25
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
140A
@ 85°C
IRKH141-14D20
IRKH142-14D20
IRKL141-14D20
IRKL142-14D20
IRKH141-16D25
IRKH141-16D25
IRKL142-16D25
IRKL142-16D25
IRKH141-18D28
IRKL141-18D28
IRKL142-18D28
IRKL142-18D28
IRKH141-20D32
IRKH142-20D32
IRKL141-20D32
IRKL142-20D32
160A
@ 85°C
IRKH161-14D20
IRKH162-14D20
IRKL161-14D20
IRKL162-14D20
IRKH161-16D25
IRKH162-16D25
IRKL161-16D25
IRKL162-16D25
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Application Notes
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as op-
posed to Fast) Thyristors and Diodes.
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation induc-
tances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of INT-A-paks
which allow the power circuit of an Inverter to be
realised with 6 capacitors and 9 INT-A-paks all mounted
on just one heatsink.
The optimal design of Current Source Inverters re-
quires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by INT-A-pak range with Thyristors up to
2000V and Diodes up to 3200V.
3xIR L
K ...
M
3xIR H
K ...
3xIR T
K ...
Current Source Inverter using 9 INT-A-paks
4
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
Ordering Information Table
Device Code
IRK
1
1
2
3
4
-
-
-
-
T
2
16
3
2
4
-
16
5
D25
6
N
7
5
6
7
Module type
Circuit configuration
Current rating: I
T(AV)
x 10 rounded
For IRK.13. only:
5 = option with spacers and longer terminal screws
6 = option with standard terminal screws
For IRK.14. and IRK.16. only:
1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
- Current Source Inverters types (See Table)
- None = Standard devices
N
= Aluminum nitrade substrate
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
IRK...5 & ...1
IRK...6 & ...2
A
25 (0.98)
23 (0.91)
B
----
30 (1.18)
C
----
36 (1.42)
D
41 (1.61)
----
E
47 (1.85)
----
IRKT...
IRKH...
IRKL...
IRKU...
IRKV...
IRKK...
IRKN...
NOTE: To order the Optional Hardware see Bulletin I27900
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