UNISONIC TECHNOLOGIES CO., LTD
MMBT2907A
PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
This UTC
MMBT2907A
is designed for use as a general
purpose amplifier and switch requiring collector currents to 600 mA.
PNP SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBT2907AL-AE3-R
MMBT2907AG-AE3-R
MMBT2907AL-AL3-R
MMBT2907AG-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
2F
L: Lead Free
G: Halogen Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R220-001.E
MMBT2907A
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°С unless otherwise specified)
RATINGS
UNIT
-60
V
-60
V
-5
V
-600
mA
SOT-23
350
mW
Power Dissipation
P
D
SOT-323
275
mW
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Case
SOT-23
SOT-323
SYMBOL
θ
JA
RATINGS
357
455
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note)
BV
CEO
I
C
=-10mA, I
B
=0
Collector-Base Breakdown Voltage
BV
CBO
I
C
=-10μA, I
E
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-10μA , I
C
=0
V
CB
=-30V, V
EB
=-0.5V
Base Cutoff Current
I
B
V
CE
=-30V, V
BE
=-0.5V
Collector Cutoff Current
I
CEX
V
CB
=-50V, I
E
=0
Collector Cutoff Current
I
CBO
V
CB
=-50V, I
E
=0, T
A
=150°С
ON CHARACTERISTICS
I
C
=-0.1mA, V
CE
=-10V
I
C
=-1.0 mA, V
CE
=-10V
I
C
=-10 mA, V
CE
=-10V
I
C
=-150 mA, V
CE
=-10V (Note)
I
C
=-500 mA, V
CE
=-10V (Note)
I
C
=-150 mA, I
B
=-15mA
I
C
=-500 mA, I
B
=-50mA
I
C
=-150 mA, I
B
=-15mA (Note)
I
C
=-500 mA, I
B
=-50mA
75
100
100
100
50
MIN
-60
-60
-5
-50
-50
-0.02
-20
TYP MAX UNIT
V
V
V
nA
nA
μA
μA
DC Current Gain
h
FE
300
-0.4
-1.6
-1.3
-2.6
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
f
T
I
C
=-50mA, V
CE
=-20V, f=100MHz
Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=100kHz
Input Capacitance
C
ib
V
EB
=-2V, I
C
=0, f=100kHz
SWITCHING CHARACTERISTICS
Turn-on Time
t
ON
V
CC
=30V, I
C
=-150mA,
Delay Time
t
DLY
I
B1
=-15mA
Rise Time
t
R
Turn-off Time
t
OFF
V
CC
=6V, I
C
=-150mA,
Storage Time
t
S
I
B1
= I
B2
=-15mA
Fall Time
t
F
Note: Pulse Test: Pulse Width
≤
300ms, Duty Cycle≤2.0%
200
8
30
45
10
40
100
80
30
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2 of 6
QW-R220-001.E
MMBT2907A
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
Collector Emitter Voltage, V
CE(SAT)
(V)
PNP SILICON TRANSISTOR
500
400
300
200
100
-0.5
-0.4
-0.3
-0.2
-0.1
0
-1
Collector Emitter Saturation Voltage
vs Collector Current
V
CE
=-5V
DC Current Gain, h
FE
β=10
125°С
25°С
25°С
125°С
-40°С
-10
-100
-500
-40°С
-3 -10 -30 -100 -300
-1
Collector Current, I
C
(mA)
0
-0.1 -0.3
Collector Current, I
C
(mA)
Base Emitter on Voltage
vs Collector Current
Base Emitter on Voltage, V
BE(ON)
(V)
-1
-0.8
-0.6
-0.4
-0.2
0
-0.1
Base Emitter Saturation Voltage
vs Collector Current
Base Emitter Voltage, V
BE(SAT)
(V)
-1
-40°С
-0.8
-0.6
-0.4
-0.2
0
-1
-40°С
25°С
125°С
β=10
25°С
125°С
V
CE
=-5V
-10
-100
Collector Current, I
C
(mA)
Collector Cutoff Current vs
Ambient Temperature
-500
-1
-10
-25
Collector Current, I
C
(mA)
Input And Output Capacitance vs
Reverse Bias Voltage
-100
Collector Current, I
CBO
(nA)
20
16
Capacitance (pF)
V
CB
=-35V
-10
-1
12
8
4
0
0.1
C
te
-0.1
C
ob
0.01
25
50
75
100
125
1
10
-50
Ambient Temperature, T
a
(°С)
Reverse Bias Voltage (V)
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QW-R220-001.E
MMBT2907A
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
Time (ns)
Turn On Base Current, I
B1
(mA)
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Time (ns)
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QW-R220-001.E