Provisional Data Sheet No. PD 9.809
HEXFET
®
TRANSISTOR
200 Volt, 0.060Ω, HEXFET
Ω
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry design achieves ver y
low on-state resistance combined with high trans-
conductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
IRFI260
N-CHANNEL
Product Summary
Part Number
IRFI260
BV
DSS
200V
R
DS(on)
0.060Ω
I
D
45A*
Features:
n
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
I D @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* ID current limited by pin diameter
300 (0.063 in. (1.6mm) from case for 10 sec.)
10.9 (typical)
IRFI260
45*
29
180
300
2.4
±20
700
45
30
4.3
-55 to 150
Units
A
W
W/K
V
mJ
A
mJ
V/ns
o
C
g
IRFI260 Device
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV DSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temp. Coefficient of Breakdown Voltage
R DS(on)
Static Drain-to-Source
On-State Resistance
V GS(th)
g fs
I DSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
200
—
—
—
2.0
22
—
—
Typ. Max. Units
—
—
V
0.24
—
V/°C
— 0.060
Ω
— 0.068
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
4.0
—
25
250
100
-100
230
40
110
29
120
110
92
—
V
S( )
µA
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
VGS = 10V, ID =29A
VGS = 10V, ID = 45A
VDS = VGS, I D = 250µA
VDS
≥
15V, IDS = 29A
VDS =0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, I D = 45A
VDS = Max. Rating x 0.5
VDD = 100V, ID =45A,
RG = 2.35Ω, VGS =10V
I GSS
I GSS
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
8.7
—
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5100
1100
280
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
IRFI260 Device
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
45*
180
A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
Diode Forward Voltage
—
—
—
—
—
—
1.8
420
4.9
V
ns
µC
T
j
= 25°C, IS = 45A, VGS = 0V
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDD
≤
50V
t rr
Reverse Recovery Time
Q RR Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min. Typ. Max. Units Test Conditions
—
—
—
— 0.42
—
30
0.21 —
K/W
typical socket mount
mounting surface flat, smooth
Repetitive Rating; Pulse width limited by
maximum junction temperature.
ISD
≤
45A, di/dt
≤
130 A/µs,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35Ω
Pulse width
≤
300
µs;
Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
@ VDD = 50V, Star ting T J = 25°C,
EAS = [0.5 * L * (I
L2
) * [BVDSS/(BVDSS-VDD)]
Peak IL = 45A, VGS = 10V, 25
≤
R G
≤
200Ω
IRFI260 Device
Case Outline and Dimensions — TO-259AA
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
2. All dimensions in millimeters (inches)
LEGEND:
1. Drain
2.. Source
3. Gate
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which will
produce beryllia or beryllium dust. Furthermore, beryllium oxides
packages shall not be placed in acids that will produce fumes
containing beryllium.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
7/96
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
