Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> IR590SG12H

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IR590SG12H: 产品描述Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, DIE-2; 产品类别模拟混合信号IC 触发装置; 文件大小84KB，共3页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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IR590SG12H概述

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, DIE-2

IR590SG12H规格参数

参数名称	属性值
厂商名称	Vishay(威世)
零件包装代码	DIE
包装说明	UNCASED CHIP, S-XUUC-N2
针数	2
Reach Compliance Code	unknown
配置	SINGLE
最大直流栅极触发电流	140 mA
JESD-30 代码	S-XUUC-N2
元件数量	1
端子数量	2
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	UNCASED CHIP
认证状态	Not Qualified
断态重复峰值电压	1200 V
重复峰值反向电压	1200 V
表面贴装	YES
端子形式	NO LEAD
端子位置	UPPER
触发设备类型	SCR
Base Number Matches	1

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Bulletin I0213J 10/00

IR590SG..HCB

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

RRM

Class:

Passivation Process:

Reference IR Packaged Part:

Square 590 mils

600 to 1200 V

Glassivated MESA

181RKI Series

Major Ratings and Characteristics

Parameters

Maximum On-state Voltage

Units

1.2 V

600 to 1200 V

140 mA

5 to 180 mA

900 mA

Test Conditions

= 25°C, I

= 25 A

= 25°C, I

DRM

RRM

= 100 µA

(1)

DRM

/ V

RRM

Direct and Reverse Breakdown Voltage

Max. Required DC Gate Current to Trigger

Max. Required DC Gate Voltage to Trigger

Holding Current Range

Maximum Latching Current

= 25° C, anode supply = 6 V, resistive load

Anode supply = 6 V, resistive load

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

590 x 590 mils (see drawing)

100 mm, with std. <110> flat

370 µm ± 10 µm

130 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in dessicated

nitrogen, with no contamination

IR590SG12H相似产品对比

	IR590SG12H	IR590SG06H
描述	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, DIE-2	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, DIE-2
厂商名称	Vishay(威世)	Vishay(威世)
零件包装代码	DIE	DIE
包装说明	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2
针数	2	2
Reach Compliance Code	unknown	unknown
配置	SINGLE	SINGLE
最大直流栅极触发电流	140 mA	140 mA
JESD-30 代码	S-XUUC-N2	S-XUUC-N2
元件数量	1	1
端子数量	2	2
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE
封装形式	UNCASED CHIP	UNCASED CHIP
认证状态	Not Qualified	Not Qualified
断态重复峰值电压	1200 V	600 V
重复峰值反向电压	1200 V	600 V
表面贴装	YES	YES
端子形式	NO LEAD	NO LEAD
端子位置	UPPER	UPPER
触发设备类型	SCR	SCR
Base Number Matches	1	1

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