BZX84C2V4
THRU
BZX84C75
Features
Planar Die Construction
350mW Power Dissipation
Zener Voltages from 2.4V - 75V
Ideally Suited for Automated Assembly Processes
P/N suffix V means AEC-Q101
q
ualified, e.g:BZX84C2V4V
P/N suffix V means Halogen-free
A
SOT-23
Dim
Min
Max
B
TOP VIEW
C
E
D
G
H
K
J
L
M
All Dimensions in mm
Maximum Ratings
Forward Voltage
Power Dissipation (Note 1)
@T =25 C unless otherwise specified
Symbol
@ I
F
= 10mA
V
F
P
d
R
T
j,
T
STG
350
357
-65 to +150
Value
Unit
V
mW
K/W
C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300μ s pulse width, period = 5ms.
3. f = 1KHz.
2018-11/03
REV:
B
Nominal Zener Voltage
Max. Zener Impedance
Max.Reverse
Leakage
Part Number
Marking
Vz(V) @ I
ZT *1
Nom.
Min.
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40 85
44 65
48.45
58.0
64.60
71.25
Max.
2.52
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
45.15
49.35
53 55
66.0
71.40
78.75
Z
ZT
@ I
ZT
Ohm
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
100
215
240
265
5
2
2
2
2
2
5
5
5
2
2
2
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Z
ZK
@ I
ZK
Ohm
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
450
1600
1700
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.25
0.25
mA
1
1
1
1
Current
IR @ VR
μ
A
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.05
0.1
0.1
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
43.4
52
56
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
BZX84C47
BZX84C51
BZX84C62
BZX84C68
BZX84C75
Notes:
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y19
Y20
Y21
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
62
68
75
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300μs pulse width, period = 5ms.
3. f = 1KHz.
RATING AND CHARACTERISTICS CURVES (BZX84C2V4 THRU BZX84C75)
500
See Note 1
50
T
j
= 25°C
C2V7
C3V9
C5V6
C6V8
C3V3
C4V7
I
Z
, ZENER CURRENT (mA)
400
40
C8V2
P
d
, Power Dissipation (mW)
300
30
200
20
100
10
Test Current I
Z
5.0mA
0
0
100
200
0
0
1
T
A
, Ambient Temperature, (°C)
Fig. 1 Power Derating Curve
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
C47
C43 C51
2
10
30
T
j
= 25°C
C10
C12
10
Tj = 25°C
C39
I
Z
, ZENER CURRENT (mA)
20
C15
I
Z
, ZENER CURRENT (mA)
8
6
C18
Test current I
Z
2mA
10
Test current I
Z
5mA
C22
C27
C33
C36
4
Test Current I
Z
2mA
2
0
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
1000
0
40
10
30 40 50 60 70 80 90 100
V
Z
, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
20
T
j
= 25 °C
C
j
, JUNCTION CAPACITANCE (pF)
V
R
= 1V
V
R
= 2V
100
V
R
= 1V
V
R
= 2V
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
PACKAGING OF DIODE
REEL PACK
PACKAGE
SOT-23/-3L
PACKING
CODE
-T
REEL
( EA )
3,000
COMPONENT TAPE SPACE
SPACE(mm)
(mm)
---
---
REEL DIA
(mm)
178
CARTON SIZE
(mm)
438*438*220
EA PER
CARTON
180,000
GROSS
WEIGHT(Kg)
---
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
