SRAM Module, 128KX32, 20ns, CMOS,
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Micross |
| 包装说明 | , |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 20 ns |
| 其他特性 | USER CONFIGURABLE AS 512K X 8 |
| 备用内存宽度 | 16 |
| JESD-30 代码 | R-XQMA-N68 |
| JESD-609代码 | e0 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端子数量 | 68 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 128KX32 |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| AS7S128K32ECJ-20M | AS7S128K32F-35M | AS7S128K32F-15M | AS7S128K32ECJ-15M | AS7S128K32ECJ-35M | AS7S128K32F-25M | AS7S128K32F-20M | AS7S128K32P-15M | AS7S128K32ECJ-25M | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 128KX32, 20ns, CMOS, | SRAM Module, 128KX32, 35ns, CMOS, | SRAM Module, 128KX32, 15ns, CMOS, | SRAM Module, 128KX32, 15ns, CMOS, | SRAM Module, 128KX32, 35ns, CMOS, | SRAM Module, 128KX32, 25ns, CMOS, | SRAM Module, 128KX32, 20ns, CMOS, | SRAM Module, 128KX32, 15ns, CMOS, CPGA66, 1.090 X 1.090 INCH, CERAMIC, PGA-66 | SRAM Module, 128KX32, 25ns, CMOS, |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 20 ns | 35 ns | 15 ns | 15 ns | 35 ns | 25 ns | 20 ns | 15 ns | 25 ns |
| 其他特性 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 | USER CONFIGURABLE AS 512K X 8 |
| 备用内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| JESD-30 代码 | R-XQMA-N68 | R-XQMA-F32 | R-XQMA-F32 | R-XQMA-N68 | R-XQMA-N68 | R-XQMA-F32 | R-XQMA-F32 | S-CPGA-P66 | R-XQMA-N68 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 68 | 32 | 32 | 68 | 68 | 32 | 32 | 66 | 68 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 128KX32 | 128KX32 | 128KX32 | 128KX32 | 128KX32 | 128KX32 | 128KX32 | 128KX32 | 128KX32 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | GRID ARRAY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | NO LEAD | FLAT | FLAT | NO LEAD | NO LEAD | FLAT | FLAT | PIN/PEG | NO LEAD |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | PERPENDICULAR | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
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