DG271MIL
Vishay Siliconix
High-Speed Quad Monolithic SPST CMOS Analog Switch
FEATURES
D
D
D
D
D
Fast Switching t
ON
: 55 ns
Low Charge Injection: 5 pC
Low r
DS(on)
: 32
W
TTL/CMOS Compatible
Low Leakage: 50 pA
BENEFITS
D
Fast Settling Times
D
Reduced Switching Glitches
D
High Precision
APPLICATIONS
D
D
D
D
D
D
D
D
High-Speed Switching
Sample/Hold
Digital Filters
Op Amp Gain Switching
Flight Control Systems
Automatic Test Equipment
Choppers
Communication Systems
DESCRIPTION
The DG271 high speed quad single-pole single-throw analog
switch is intended for applications that require low
on-resistance, low leakage currents, and fast switching
speeds.
The military version of the DG271 is manufactured using the
Vishay Siliconix high voltage metal gate wafer fabrication
process. The military version of the DG271 shares the same
performance of the commercial DG271B, which uses the high
voltage silicon gate process.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
CerDIP
D
1
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
NC
NC
GND
S
3
S
4
D
3
IN
3
9
D
4
10
Key
3
S
1
V–
4
5
6
7
8
2
Ceramic LCC
IN
1
NC
1
IN
2
20
D
2
19
18
17
16
15
14
S
2
V+
NC
NC
S
3
11
12
13
D
3
IN
4
NC IN
3
Top View
TRUTH TABLE
Logic
0
1
Logic “0”
v
0.8 V
0
Logic “1”
w
2.4 V
Document Number: 70043
S-63984—Rev. G, 23-Aug-99
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ON
OFF
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DG271MIL
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
16-Pin CerDIP
16 Pi C DIP
–55 to 125 C
55 125_C
LCC-20
Part Number
DG271AK
DG271AK/883
5962-8671602MEA
DG271AZ/883
5962-8671602M2A
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or
20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature (AK and AZ Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
Power Dissipation (Package)b
16-Pin CerDIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
LCC-20
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 12 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5V
Reg
Level
Shift/
Drive
IN
X
V–
V+
S
X
D
X
GND
V–
FIGURE 1.
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Document Number: 70043
S-63984—Rev. G, 23-Aug-99
DG271MIL
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
V
ANALOG
r
DS(on)
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
I
D(on)
+
I
S(on)
V
S
= V
D
=
"14
V
V
D
=
"14
V, V
S
=
#14
V
I
S
= 1 mA, V
D
=
"10
V
Full
Room
Full
Room
Full
Room
Full
Room
Full
–1
–60
–1
–60
–1
–60
–15
32
"0.05
"0.05
"0.05
15
50
75
1
60
1
60
1
60
nA
A
V
W
A Suffix
–55 to 125_C
Symbol
V+ = 15 V, V– = –15 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Min
d
Typ
c
Max
d
Unit
Digital Control
Input Current with Voltage High
Input Current with Voltage Low
I
INH
I
INL
V
IN
= 2 V
V
IN
= 15 V
V
IN
= 0 V
Full
Full
Full
–1
–1
–1
0.010
0.010
0.010
1
1
1
mA
A
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
ON
t
OFF
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
W
See Figure 3
V
S
= 0 V, V
IN
= 5 V
,
f = 1 MHz
MH
V
D
= V
S
= 0 V, V
IN
= 0 V
C
L
= 10 pF, R
L
= 1 kW
f = 100 kHz
See Figures 4 and 5
V
S
=
"10
V
See Figure 3
S Fi
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
55
50
65
80
ns
65
80
pC
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Off Isolation
Crosstalk
Q
C
S(off)
C
D(off)
C
D
(
on)
OIRR
X
TALK
–5
8
8
30
85
pF
F
dB
100
Supply
Positive Supply Current
Negative Supply Current
I+
I–
All Channels On or Off
V
IN
= 5 V or 0 V
Room
Full
Room
Full
–6
–8
5.5
–3.4
7.5
9
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70043
S-63984—Rev. G, 23-Aug-99
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DG271MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply Voltages
70
r DS(on) Drain-Source On-Resistance (
W
)
–
r DS(on) Drain-Source On-Resistance ( )
–
W
60
50
40
"10
V
30
20
"20
V
10
0
–20 –16 –12
–8
–4
0
4
8
12
16
20
V
D
– Drain Voltage (V)
"15
V
50
V+ = 15 V
V– = –15 V
40
125_C
30
85_C
25_C
20
0_C
–55_C
10
r
DS(on)
vs. V
D
and Temperature
"5
V
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
2.5
10 nA
Leakage Currents vs. Temperature
I
D(on)
2
1 nA
V IN ( V )
Leakage
1.5
1
I
S(off),
I
D(off)
100 pA
0.5
0
"4
"6
"8
"10
"12
"14 "16
"18 "20
Positive/Negative Supplies (V)
10 pA
–55
–35
–15
5
25
45
65
85
105
125
Temperature (_C)
Switching Times vs. Temperature
55
V+ = 15 V
V– = –15 V
50
Switching Time (ns)
Switching Time (ns)
t
ON
50
55
Switching Time vs. Power Supply Voltage
45
45
40
t
OFF
40
t
ON
35
35
t
OFF
30
–55
30
–25
0
25
50
75
100
125
"4
"6
"8
"10
"12
"14 "16
"18 "20
Temperature (_C)
Supply Voltage (V)
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Document Number: 70043
S-63984—Rev. G, 23-Aug-99
DG271MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Times vs. Temperature
90
V+ = 15 V
V– = –15 V
180
160
140
70
t
(on)
Switching Time (ns)
120
100
80
60
40
"4
Switching Times vs. Power Supply Voltage
80
Switching Time (ns)
60
t
(on)
50
t
(off)
40
t
(off)
30
–55
–35
–15
5
25
45
65
85
105
125
"6
"8
"10
"12 "14 "16
"18 "20
Temperature (_C)
V+ – Positive Supply (V)
TEST CIRCUITS
+15 V
Logic
Input
5V
50%
0V
t
OFF
V
S
V
O
V
O
t
ON
90%
t
r
<20 ns
t
f
<20 ns
V+
10 V
S
IN
5V
GND
V–
R
L
1 kW
C
L
35 pF
D
V
O
Switch
Input
Switch
Output
C
L
(includes fixture and stray capacitance)
–15 V
V
O
= V
S
R
L
R
L
+ r
DS(on)
FIGURE 2.
Switching Time
Document Number: 70043
S-63984—Rev. G, 23-Aug-99
www.siliconix.com
S
FaxBack 408-970-5600
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