DATA SHEET
COMPOUND TRANSISTOR
BP1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing
of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA
equipments such as VCRs and TVs.
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
BP1 SERIES LISTS
Products
BP1A4A
BP1L2Q
BP1A3M
BP1F3P
BP1J3P
BP1L3N
BP1A4M
R
1
(KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R
2
(KΩ)
10
4.7
1.0
10
10
10
10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11740EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
BP1 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base volgate
Colletor to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Note 1
I
B(DC)
P
T
T
j
T
stg
Ratings
−25
−25
−10
−0.7
−1.0
−0.02
250
150
−55
to +150
Unit
V
V
V
A
A
A
mW
°C
°C
Note 1
PW
≤
10 ms, duty cycle
≤
50 %
BP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
Note 2
h
FE2
Note 2
h
FE3
Note 2
V
CE(sat)
Note 2
V
IL
Note 2
R
1
R
2
Conditions
V
CB
=
−22
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−0.7
A
I
C
=
−0.3
A, I
B
=
−6
mA
V
CE
=
−5.0
V, I
C
=
−100
µ
A
−
7
−
10
200
100
50
−0.28
−0.4
−0.3
−
13
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
Ω
kΩ
Note 2
PW
≤
350
µ
s, duty cycle
≤
2 %
BP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
Note 2
h
FE2
Note 2
h
FE3
Note 2
V
OL
Note 2
V
IL
Note 2
Conditions
V
CB
=
−22
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−0.7
A
V
IN
=
−5.0
V, I
C
=
−0.3
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
150
100
50
350
300
200
−0.30
−0.4
−0.3
V
V
Ω
kΩ
R
1
R
2
329
3.29
470
4.7
611
6.11
Note 2
PW
≤
350
µ
s, duty cycle
≤
2 %
2
Data Sheet D11740EJ2V0DS
BP1 SERIES
BP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
Note 2
h
FE2
Note 2
h
FE3
Note 2
V
OL
Note 2
V
IL
Note 2
R
1
R
2
Conditions
V
CB
=
−22
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−0.7
A
V
IN
=
−5.0
V, I
C
=
−0.2
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
0.7
0.7
1.0
1.0
80
100
50
−0.3
−0.4
−0.3
1.3
1.3
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
kΩ
kΩ
Note 2
PW
≤
350
µ
s, duty cycle
≤
2 %
BP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
Note 2
Conditions
V
CB
=
−22
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−0.7
A
V
IN
=
−5.0
V, I
C
=
−0.2
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
200
100
50
−0.4
−0.3
1.54
7
2.2
10
2.86
13
Note 2
h
FE3
Note 2
V
OL
Note 2
V
IL
Note 2
R
1
R
2
V
V
kΩ
kΩ
Note 2
PW
≤
350
µ
s, duty cycle
≤
2 %
BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
Note 2
h
FE2
Note 2
h
FE3
Note 2
V
OL
Note 2
V
IL
Note 2
R
1
R
2
Conditions
V
CB
=
−22
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−0.7
A
V
IN
=
−5.0
V, I
C
=
−0.2
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
2.3
7
3.3
10
200
100
50
470
300
200
−0.28
−0.4
−0.3
4.3
13
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
kΩ
kΩ
Note 2
PW
≤
350
µ
s, duty cycle
≤
2 %
Data Sheet D11740EJ2V0DS
3
测试/测量
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