SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4292, REV. -
SHD426110
NPN POWER TRANSISTOR
•
Hermetic Package
•
Generic Part Number 2N5154
•
JANTX Screening (S-100) available, add an “S” to the end of the part number
•
JANS Screening (SS-100) Available, add an “SS” to the end of the part number
Absolute Maximum Ratings*
Symbol
Parameter
V
CEO
V
CBO
V
EBO
I
C
T
J
T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Operating Junction Temperature Range
Storage Temperature Range
T
A
= 25°C unless otherwise noted
Value
80
100
5.5
2.0
-65 to +200
-65 to +200
Units
V
V
V
A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJC
T
C
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Max
11.8
66.7
15
Units
W
mW/°C
°C/W
Electrical Characteristics
Symbol
Parameter
Test Conditions
OFF CHARACTERISTICS
V
(BR)CBO
I
EBO1
I
EBO2
I
CES1
I
CES2
I
CEO
I
CEX
Collector-Base Breakdown Voltage
Base-Emitter Cutoff Current
Collector-Emitter Cutoff Current
T
A
= 25°C unless otherwise noted
Min
Max
Units
I
C
= 100mA, I
B
= 0, pulsed
V
EB
= 4V, I
C
= 0
V
EB
= 5.5V, I
C
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 60V, V
EB
= 2V, T
C
= 150°C
80
-
-
-
-
-
-
-
1.0
1.0
1.0
1.0
50
500
V
µA
mA
µA
mA
µA
µA
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SHD426110
SENSITRON
DATA SHEET 4292 REV. -
Electrical Characteristics
Symbol
Parameter
Test Conditions
ON CHARACTERISTICS*
h
FE1
h
FE2
h
FE3
h
FE4
V
BE
V
BE(sat)1
V
BE(sat)2
V
CE(sat1
V
CE(sat)2
Forward Current Transfer Ratio
T
A
= 25°C unless otherwise noted
Min
Max
Units
Base-Emitter Voltage, non-saturated
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
I
C
= 50mA, V
CE
= 5.0V
I
C
= 2.5A, V
CE
= 5.0V,
pulsed
I
C
= 5.0A, V
CE
= 5.0V,
pulsed
I
C
= 2.55A, V
CE
= 5.0V,
pulsed
,
T
C
= -55C
V
CE
= 5.0V, I
C
= 2.5A,
pulsed
I
C
= 2.5A, I
B
= 250mA,
pulsed
I
C
= 5A, I
B
= 500mA,
pulsed
I
C
= 2.5A, I
B
= 250 mA,
pulsed
I
C
= 5A, I
B
= 500mA,
pulsed
50
70
40
25
-
-
-
-
-
-
-
-
-
1.45
1.45
2.2
0.75
1.5
-
200
-
-
Vdc
Vdc
Vdc
Vdc
Vdc
SMALL SIGNAL CHARACTERISTICS
|h
fe
|
h
fe
C
obo
Magnitude of Common Emitter
Small Signal Short Circuit
Forward Current Transfer Ratio
Common Emitter
Small Signal Short Circuit
Forward Current Transfer Ratio
Output Capacitance
I
C
= 500mA, V
CE
= 5.0V,
f = 10 MHz
I
C
= 100mA, V
CE
= 5V,
f = 1kHz
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
7.0
50
-
-
-
250
-
-
pF
SWITCHING TIME
t
on
t
s
t
f
t
off
Delay Time
Storage Time
Fall Time
Turn-Off Time
I
C
= 5A, I
B1
= 500mA
I
B2
= -500mA
V
BE(off)
= 3.7V
R
L
= 6 Ohms
-
-
-
-
0.5
1.4
0.5
1.5
µs
µs
µs
µs
MECHANICAL DIMENSIONS: in Inches / mm
.150 (3.81
Dia.
.140 3.56)
.420 (10.67
.410 10.41)
.200 (5.08
.190 4.82)
.045 (1.14
.035 0.89)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
.665 (16.89
.645 16.38)
.430 (10.92
.410 10.41)
1
2
3
.035 (0.89
.025 0.63)
3 Places
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
PIN ASSIGNMENTS
DEVICE TYPE
NPN Transistor
in a TO-257 Package
PIN 1
COLLECTOR
PIN 2
BASE
PIN 3
EMITTER
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
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