Datasheet> 器件分类 > 分立半导体> 二极管> BY228-13-TR

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BY228-13-TR: 产品描述DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode; 产品类别分立半导体二极管; 文件大小110KB，共4页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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BY228-13-TR概述

DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

BY228-13-TR规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
包装说明	E-LALF-W2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
应用	EFFICIENCY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.5 V
JESD-30 代码	E-LALF-W2
JESD-609代码	e2
湿度敏感等级	1
最大非重复峰值正向电流	50 A
元件数量	1
相数	1
端子数量	2
最高工作温度	140 °C
最大输出电流	3 A
封装主体材料	GLASS
封装形状	ELLIPTICAL
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
最大重复峰值反向电压	1300 V
最大反向恢复时间	20 µs
表面贴装	NO
技术	AVALANCHE
端子面层	Tin/Silver (Sn/Ag)
端子形式	WIRE
端子位置	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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BY228/13 / BY228/15

Vishay Semiconductors

Standard Avalanche Sinterglass Diode

Features

•

Glass passivated junction

Hermetically sealed package

Lead (Pb)-free component

Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

949588

Applications

High voltage rectification

Efficiency diode in horizontal deflection circuits

Mechanical Data

Case:

SOD-64 Sintered glass case

Terminals:

Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

approx. 858 mg

Parts Table

Part

BY228-13

BY228-15

Type differentiation

= 1000 V; I

FAV

= 3 A

= 1200 V; I

FAV

= 3 A

SOD-64

Package

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Parameter

Peak reverse voltage, non

repetitive

Reverse voltage

Peak forward surge current

Average forward current

Junction temperature

Storage temperature range

Non repetitive reverse

avalanche energy

(BR)R

= 0.4 A

Test condition

= 100

µA

Part

BY228/13

BY228/15

see electrical characteristics

= 10 ms, half sinewave

BY228/13

BY228/15

Symbol

RSM

FSM

FAV

stg

Value

1300

1500

1000

1200

140

- 55 to + 175

Unit

°C

Maximum Thermal Resistance

amb

= 25 °C, unless otherwise specified

Parameter

Junction ambient

Test condition

on PC board with spacing

25 mm

Symbol

thJA

Value

Unit

K/W

Document Number 86004

Rev. 1.6, 14-Apr-05

www.vishay.com

BY228/13 / BY228/15

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

Document Number 86004

Rev. 1.6, 14-Apr-05

BY228-13-TR相似产品对比

	BY228-13-TR	BY228-13-TAP	BY228-15-TR	BY228-TAP	BY228-15-TAP	BY228-TR
描述	DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode	DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode	DIODE 3 A, 1500 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode	DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode	DIODE 3 A, 1500 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode	DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合
包装说明	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
针数	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
JESD-609代码	e2	e2	e2	e2	e2	e2
最大非重复峰值正向电流	50 A	50 A	50 A	50 A	50 A	50 A
元件数量	1	1	1	1	1	1
相数	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	140 °C	140 °C	140 °C	140 °C	140 °C	140 °C
最大输出电流	3 A	3 A	3 A	3 A	3 A	3 A
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	1300 V	1300 V	1500 V	1300 V	1500 V	1300 V
最大反向恢复时间	20 µs	20 µs	20 µs	20 µs	20 µs	20 µs
表面贴装	NO	NO	NO	NO	NO	NO
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子面层	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大正向电压 (VF)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-
湿度敏感等级	1	1	-	-	1	1
厂商名称	-	-	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)

BY228-13-TR

BY228-13-TR概述

BY228-13-TR规格参数

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