电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IDT7025L17JG

产品描述Dual-Port SRAM, 8KX16, 17ns, CMOS, PQCC84, PLASTIC, LCC-84
产品类别存储    存储   
文件大小177KB,共22页
制造商IDT (Integrated Device Technology)
标准
下载文档 详细参数 全文预览

IDT7025L17JG概述

Dual-Port SRAM, 8KX16, 17ns, CMOS, PQCC84, PLASTIC, LCC-84

IDT7025L17JG规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码LCC
包装说明QCCJ,
针数84
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间17 ns
其他特性INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP
JESD-30 代码S-PQCC-J84
JESD-609代码e3
长度29.3116 mm
内存密度131072 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度16
功能数量1
端口数量2
端子数量84
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8KX16
输出特性3-STATE
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度4.57 mm
最小待机电流2 V
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层MATTE TIN
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度29.3116 mm
Base Number Matches1

文档预览

下载PDF文档
HIGH-SPEED
8K x 16 DUAL-PORT
STATIC RAM
Features
IDT7025S/L
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7025S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7025L
Active: 750mW (typ.)
Standby: 1mW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT7025 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for
BUSY
output flag on Master
M/S = L for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, Flatpack, PLCC, and 100-pin Thin
Quad Flatpack
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
0L
-I/O
7L
BUSY
L
A
12L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
A
12R
A
0R
(1,2)
Address
Decoder
13
MEMORY
ARRAY
13
Address
Decoder
CE
L
OE
L
R/W
L
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
R
INT
R
(2)
2683 drw 01
M/S
OCTOBER 2008
1
©2008 Integrated Device Technology, Inc.
DSC 2683/10

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2052  1359  2730  1927  1997  42  28  55  39  41 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved