128Mb DDR SDRAM
Target
DDR SDRAM Specification
Version 0.61
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REV. 0.61 August 9. '99
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998)
- First version for internal review
Version 0.1(June, 1998)
- Added x4 organization
Version 0.2(Sep,1998)
1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.
2. In power down mode timing diagram, NOP condition is added to precharge power down exit.
Version 0.3(Dec,1998)
- Added QFC Function.
-
Added DC current value
- Reduce I/O capacitance values
Version 0.4(Feb,1999)
-Added DDR SDRAM history for reference(refer to the following page)
-Added low power version DC spec
Version 0.5(Apr,1999)
-Revised following first showing for JEDEC standard
-Added
DC target current based on new DC test condition
Version 0.6(July 1,1999)
1.Modified binning policy
From
To
-Z (133Mhz)
-Z (133Mhz/266Mbps@CL=2)
-8 (125Mhz)
-Y (133Mhz/266Mbps@CL=2.5)
-0 (100Mhz)
-0 (100Mhz/200Mbps@CL=2)
2.Modified the following AC spec values
From.
-Z
tAC
tDQSCK
tDQSQ
tDS/tDH
tCDLR
*1
tPRE
*1
tRPST
*1
tHZQ
*1
*1
Target
To.
-0
+/- 1ns
+/- 1ns
+/- 0.75ns
0.75 ns
2.5tCK-tDQSS
1tCK +/- 1ns
tCK/2 +/- 1ns
tCK/2 +/- 1ns
-Z
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/- 0.75ns
-Y
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/- 0.75ns
-0
+/- 0.8ns
+/- 0.8ns
+/- 0.6ns
0.6 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/-0.8ns
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
2.5tCK-tDQSS
1tCK +/- 0.75ns
tCK/2 +/- 0.75ns
tCK/2 +/- 0.75ns
: Changed description method for the same functionality. This means no difference from the previous version.
3.Changed the following AC parameter symbol
From.
To.
tDQCK
tAC
Output data access time from CK/CK
Version 0.61(August 9,1999)
- Changed the some values of "write with auto precharge" table for different bank in page 30.
Asserted
command
Old
Read
Read + AP
*1
Legal
Legal
For Different Bank
3
New
Illegal
Illegal
Old
Legal
Legal
4
New
Illegal
Illegal
- 2 of 63 -
REV. 0.61 August 9. '99
128Mb DDR SDRAM
Revision History
-
This revision history is for 64Mb and only for reference in other density.
Target
Version 0.5 (JUN, 1997)
- First version for external release
- Center aligned DQ on reads and writes, 3.3V Vdd/Vddq, LVTTL for command and SSTL for DQ, DQS, CK and DM.
Version 0.6 (SEP. 1997)
- Changed to Edge alignedDQ on reads
- Add detailed discription for each functionality
Version 0.7 (JAN. 1998)
- Power supply: 3.3V +10%,-5% power supply for device operation (Vdd)
2.5V Power supply for I/O interface (Vddq)
- Interface: Add SSTL_2 for CK/DM (class I), DQ/DQS(class II) for KM416H431T.
* Put two part numbers, KM416H430T and KM416H431T.
- Clock input: Change to differential clock from single ended clock.
* Use CK, CK instead of CLK.
- Package: Change to 66pin TSOP-II, instead of 54pin TSOP-II
- tDQSS: Change to 0.75 ~ 1.25 tCK form 3ns ~ 1 tCK.
Add tSDQS(DQS-in setup time)
- In page 13, "DM can be ~" is modified to "DM must be ~".
- Tighten AC specs Change CK/CK hign/low level width from 0.4(min)/0.6(max)tCK to 0.45(min)/0.55(max)tCK.
-> Better input clock duty ratio from differential clock.
Version 0.8 (FEB. 1998)
- Correct pin rotation on pin 48 and 49 from 48-Vref, 49-Vss to 48-Vss, 49-Vref.
Version 0.9 (MAR. 1998)
- Change power-up sequence
. Add EMRS for DLL enable/disable
. Change DLL reset pin from A9 to A8 on MRS.
- Change speed range
. Add 133Mhz (266Mbps/pin), remove -12 (83Mhz)
- Change output load circuit
- Change input capacitance
- Add a comment on read interrupting write timing: Read command interrupting write can not be
issued at the next clock edge of write command.
- Modify the simplified state diagram on page 24.
Version 0.91 (May, 1998)
- Changed part number from KM416H430T/KM416H431T to KM416H4030T/KM416H4031T
- Added the 66pin package dimension on page 30.
- Changed Output Load Circuit 2 in page 29
- Removed CL=1.5
- Corrected typos
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REV. 0.61 August 9. '99
128Mb DDR SDRAM
Contents
Revision History
DDR SDRAM Ordering Information
1. Key Features
1.1 Features
1.2 Operating Frequencies
1.3 Device Information by organization
2. Package Pinout & Dimension
2.1 Package Pintout
2.2 Input/Output Function Description
2.3 66 Pin TSOP(II)/MS-024FC Package Physical Dimension
3. Functional Description
3.1 Simplified State Diagram
3.2 Basic Functionality
3.2.1 Power-Up Sequence
3.2.2 Mode Register Definition
3.2.2.1 Mode Register Set(MRS)
3.2.2.2 Extended Mode Register Set(EMRS)
Target
2
8
9
9
9
9
10
10
11
12
13
13
14
14
15
15
17
18
18
19
19
19
20
20
21
22
22
23
24
3.2.3 Precharge
3.2.4 No Operation(NOP) & Device Deselect
3.2.5 Row Active
3.2.6 Read Bank
3.2.7 Write Bank
3.3 Essential Functionality for DDR SDRAM
3.3.1 Burst Read Operation
3.3.2 Burst Write Operation
3.3.3 Read Interrupted by a Read
3.3.4 Read Interrupted by a Write & Burst Stop
3.3.5 Read Interrupted by a Precharge
3.3.6 Write Interrupted by a Write
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REV. 0.61 August 9. '99
128Mb DDR SDRAM
3.3.7 Write Interrupted by a Read & DM
3.3.8 Write Interrupted by a Precharge & DM
3.3.9 Burst Stop
3.3.10 DM masking
3.3.11 Read With Auto Precharge
3.3.12 Write With Auto Precharge
3.3.13 Auto Refresh & Self Refresh
3.3.14 Power Down
Target
25
26
27
28
29
30
31
32
4. Command Truth Table
5. Functional Truth Table
6. Absolute Maximum Rating
7. DC Operating Conditions & Specifications
7.1 DC Operating Conditions
7.2 DC Specifications
8. AC Operating Conditions & Timming Specification
8.1 AC Operating Conditions
8.2 AC Timming Parameters & Specification
33
34
39
39
39
40
41
41
42
9. AC Operating Test Conditions
10. Input/Output Capacitance
11. IBIS: I/V Characteristics for Input and Output Buffers
11.1 Normal strength driver
11.2 Half strength driver( will be included in the future)
12. QFC function
QFC definition
QFC timming on Read Operation
QFC timming on Write operation with tDQSSmax
QFC timming on Write operation with tDQSSmin
44
44
45
45
47
48
48
48
49
49
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REV. 0.61 August 9. '99
嵌入式系统
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