FLASH
AS8F512K32
512K x 32 FLASH
FLASH MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
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SMD 5962-94612
MIL-STD-883
Fast Access Times: 70, 90, 120 and 150ns
Operation with single 5V (±10%)
Theta JC= 1.00°
C
/w
User configurable as 512Kx32, 1Mx16, or 2Mx8
Eight Equal Sectors of 64K Bytes for each 512Kx8
Compatible with JEDEC EEPROM command set
Any Combination of Sectors can be Erased
Supports Full Chip Erase
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Built in decoupling caps for low noise operation
Suspend Erase/Resume Function
Individual Byte Read/ Write Control
20 years data retention
1,000,000 Program/Erase Cycles per sector minimum
PIN ASSIGNMENT
(Top View)
68 Lead CQFP (Q & Q1)
FEATURES
66 Lead PGA (P)
OPTIONS
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Timing
70ns
90ns
120ns
150ns
Package
Ceramic Quad Flat pack
Ceramic Quad Flatpack
Pin Grid Array
MARKINGS
-70
-90
-120
-150
Q
Q1
P
No. 702
No. 904
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GENERAL DESCRIPTION
The AS8F512K32 is a 16 Megabit CMOS FLASH Memory
Module organized as 512Kx32 bits. The AS8F512K32 achieves
high speed access (70 to 150 ns), low power consumption and high
reliability by employing advanced CMOS memory technology.
An on-chip state machine controls the program and erase func-
tions. The embedded byte-program and sector/chip erase functions
are fully automatic. Data-protection of any sector combination is
accomplished using a hardware sector-protection feature.
The
Erase/Resume function
allows the sector erase operation to
read data from, or program to a non-erasing sector, then resume the
erase operation.
Device operations are selected by using standard commands into
the command register using standard microprocessor write timings.
The command register acts as an input to an internal state machine
that interprets the commands, controls the erase and programming
operations, outputs the status of the device, and outputs data stored
in the device. On initial power-up operation, the device defaults to
the read mode.
AS8F512K32
Rev. 5.4 08/10
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
FLASH
AS8F512K32
OPERATIONS
Read Mode
A low-level logic signal is applied to CE\ and OE\ pins to
read the output of the AS8F512K32. The CE\ is power control
and is used for device selection.
The delay from stable address to valid output data is the address
access time (t
AVQA
). The delay from CE\ equals logic low and
stable addresses to valid output data is the chip-enable access
time (t
ELQV
). The output-enable access time (t
GLQV
) is the delay
from OE\ =low logic to valid output data, when CE\ =low logic
and addresses are stable for at least t
AVQA
-t
GLQV
.
Standby Mode
Icc supply current is reduced by applying a logic-high on the
CE\ to enter the standby mode. In the standby mode, the outputs
are placed in the high impedance state.
If the device is deselected during erasure or programming, the
device continues to draw active current until the operation is
complete.
Output Disable
OE\= V
IL
or CE\=V
IH
, output from the device is disabled and
the output pins (DQ0 - DQ7) are placed in the high-impedance
state.
Erasure and Programming
Erasure and programming of the AS8F512K32 are accom-
plished by writing a sequence of commands using standard
microprocessor write timings. The commands are written to
a command register and input to the command state machine.
The command state machine interprets the command entered
and initiates program, erase, suspend, and resume operations
as instructed. The command state machine acts as the interface
between the write-state machine and external chip operations.
The write-state machine controls all voltage generation, pulse
generation, preconditioning and verification of the contents of
the memory. Program and block/chip-erase functions are fully
automatic. Once the end of a program or erase operation has
been reached, the device internally resets to the read mode. If
Vcc drops below the low-voltage-detect level (VLKO), any
operation in progress is aborted and the device resets to the
read mode. If a byte-program or chip-erase operation is in
progress, additional program/erase operations are ignored until
the operation completes.
Command Definitions
Operating modes are selected by writing particular address and
data sequences into the command register
Command Sequence
Table
. The device will reset to read mode if an incorrect ad-
dress and data value or writing them in the incorrect sequence
transpires. The command register does not fill an addressable
AS8F512K32
Rev. 5.4 08/10
memory location. The register is used to store the command se-
quence, along with the address and data needed by the memory
array. Commands are written by setting CE\=V
IL
and OE\= V
IH
and bring WE\ from logic-high to logic-low. Addresses are
latched on the falling edge of WE\ and data is latched on the
rising edge of WE\. Holding WE\ =V
IL
and toggling CE\ can
be used as an alternative.
Read/Reset Command
The read/reset mode is activated by writing either of the two
read/reset command register. The device remains in this mode
until one of the other valid command sequences is input into
the command register. Memory data can be read with standard
microprocessor read-cycle timing in the read mode.
On power up, the device defaults to the read/reset mode. A
read/reset command sequence if not required and memory
data is available.
Algorithm-Selection Command
The algorithm-selection command allows access to binary code
that matches the device with the proper programming -and
erase-command operations. After writing the three bus cycle
command sequence, the first byte of the algorithm-selection
code (01) can be read from address XX00. The second byte
of the code (A4) can be read from address XX01. This mode
remains in effect until another valid command sequence is
written to the device.
Byte-Program Command
Byte-programming is a four-bus-cycle-command sequence.
The first three bus cycles put the device into the program-setup
state. The fourth bus cycle loads the address location and the
data to be programmed into the device. The addresses are
latched on the falling edge of WE\ and the data is latched on
the rising edge of WE\ in the fourth cycle. The raising edge of
WE\ starts the byte-program operation. The embedded byte-
programming function automatically provides needed voltage
and timing to program and verify the cell margin. Any further
commands written to the device during the program operation
are ignored.
Programming can be preformed at any address location in
any order. When erased, all bits are in a logic state 1. Logic
0s are programmed into the device. Attempting to program
logic 1 into a bit that has been previously programmed to logic
0 causes the internal pulse counter to exceed the pulse-count
limit. This sets the exceed-timing-limit indicator (DQ5) to a
logic high state. Only an erase operation can change bits from
logic 0 to logic 1.
The status of the device during the automatic programming
operation can be monitored for the completion using the data-
polling feature or the toggle-bit feature . See the “operation
status” for the full description.
Micross Components reserves the right to change products or specifications without notice.
2
FLASH
AS8F512K32
Chip Erase Command
Chip-erase is a six-bus-cycle command sequence. The
first three bus cycles put the device into the erase-setup state.
The next two bus cycles unlock the erase mode. The sixth bus
cycle loads the chip erase command. This command sequence
is required to ensure that the memory contents are not erased
accidentally. The rising edge of WE\ starts the chip erase op-
eration. Any further commands written to the device during
the chip erase operation is ignored.
The embedded chip erase function automatically provides volt-
age and timings needed to program and verify all the memory
cells prior to electrical erase. It then erases and verifies the cell
margin automatically. The user is not required to program the
memory cells prior to erase. The status of the device during the
automatic chip erase operation can be monitored for comple-
tion using the data-polling feature. See the "operation status"
section for a full description.
Sector-Erase Command
Sector erase is a six-bus-cycle command sequence. The first
three bus cycles put the device into the erase-setup state. The
next two bus cycles unlock the erase mode. The sixth bus cycle
loads the sector erase command and the sector address location
to be erased. Any address location within the desired sector
can be used. The addresses are latched on the falling edge of
WE\ in the sixth bus cycle. After a delay of 100-ms from the
rising edge of WE\, the sector erase operation begins in the
selected source.
Sectors can be selected to be erased concurrently during the
sector-erase command sequence. For each additional sector
selected for erase, another bus cycle is issued. The bus cycle
loads the next sector-address location and the sector-erase com-
mand. The time between the end of the previous bus cycle and
the start of the next bus cycle must be less than 100 ms-other
wise, the new sector location is not loaded. A time delay of
100 ms from the raising edge of the last WE\ starts the sector
erase operation. If there is a falling edge of WE\ within the
100 ms time delay, the timer is reset.
One to eight sector address locations can be loaded in any
order. The state of the delay timer can be monitored using the
sector-erase-delay indicator (DQ3). If DQ3 is logic low, the
time delay has not expired. See the “operation status” for the
full description.
Any commands other than erase-suspend (B0) or sector erase
(30) written to the device during the sector erase operation
causes the device to exit the sector erase mode. The contents
of the sector(s) selected for erase is not valid. To complete the
sector-erase operation, reissue the sector erase command.
The embedded sector erase function automatically provides
voltage and timings needed to program and verify all the
memory cells prior to electrical erase and then erases and
verifies the cell margin automatically. The user is not required
to program the memory cells prior to erase. The status of the
device during the automatic sector erase operation can be
monitored for completion using the data-polling feature or
the toggle bit feature. See the "operation status" section for a
full description.
Erase-Suspend Command
Sector-erase operations may be interrupted by the erase-sus-
pend command (B0) , in order to read data from an unaltered
sectors of the device. Erase-suspend is a one-bus-cycle com-
mand. The addresses can be V
IL
or V
IH
and the erase-suspend
command (B0) is latched on the rising edge of WE\. Once the
sector-erase operation is in progress, the erase-suspend com-
mand request the internal write-state-machine to halt operation
at predetermined break points. The erase-suspend command
is valid only during the sector-erase operation and is valid
only during the byte-programming and chip-erase operations.
The sector-erase delay timer expires immediately if the erase-
suspend command is issued while the delay is active.
After erase-suspend is issued, the device takes between
0.1ms and 15 ms to suspend the operation. The toggle bit must
be monitored to determine when the suspend has been executed.
When the toggle bit stops toggling, data can be read from sec-
tors that are not selected for erase. See the “operation status”
section for a full definition. Reading from a sector marked for
erase can result in invalid data.
Once the sector-erase operation is suspended, further writes of
the erase-suspend command are ignored. Any command other
than erase-suspend (B0) or erase-resume (30H) written to the
device during the erase-suspend mode causes the device to exit
the suspend mode. To complete the sector-erase operation,
reissue the sector-erase command sequence.
Erase-Resume Command
The erase-resume command (30H) restarts a suspended sector
erase operation from where it was halted to completion. Erase-
resume is a one-bus-cycle command. The addresses can be V
IL
or V
IH
and the erase-resume command (30H) is latched on the
rising edge of WE\. When an erase-suspend/ erase-resume
command combination is written, the internal pulse counter
(exceed timing limit) is reset. The erase-resume command is
valid only in the erase-suspend state. After the erase-resume
command is executed, the device returns to the valid sector-
erase state and further writes of the erase-resume commands
are ignored. After the device has resumed the sector-erase
operation, another erase-resume command can be issued to
the device.
AS8F512K32
Rev. 5.4 08/10
Micross Components reserves the right to change products or specifications without notice.
3
FLASH
AS8F512K32
Device Operations
Byte-programming in progress
Byte-programming exceed time limit
Byte-programming complete
Sector/chip erase in progress
Sector/chip erase exceed time limit
Sector/chip erase complete
2
Operation Status Flags
1
Table
DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
T
0
X
0
X
X
X
D\
T
1
X
0
X
X
X
D\
D
D
D
D
D
D
D
D
0
T
0
X
1
X
X
X
0
T
1
X
1
X
X
X
1
1
1
1
1
1
1
1
NOTES:
1. T= toggle, D=data, X=data undefined
2. DQ4, DQ2, DQ1, DQ0 are reserved for future use.
OPERATION STATUS
Status Bit Definition
During operation of the automatic embedded program and
erase functions, the status of the device can be determined by
reading the data state of designated outputs. The data-polling
bit (DQ7) and toggle-bit (DQ6) require multiple successive
reads to observe a change in the state of the designated output.
Operation Status Flags Table defines the values of the Flag
status.
Data-Polling DQ7
The data-polling status outputs the complement of the
data latched into the DQ7 data register while the write-state
machine is engaged in a program or erase operation. Data bit
DQ7 changing from complement to true indicates the end of
an operation. Data-polling is available only during the byte-
programming, chip-erase, sector-erase, and sector-erase timing
delay. Data-polling is valid after the rising edge of
?W/E
in the
last bus cycle of the command sequence loaded into the com-
mand register. During a byte-program operation, reading DQ7
outputs the complement of the DQ7 data to be programmed at
the selected address location. Upon completion, reading DQ7
outputs the true DQ7 data loaded into the program data register.
During the erase operations, reading DQ7 outputs a 0. Upon
completion, reading DQ7 outputs a 1. Also, data polling must
be performed at a new sector address that is within a sector
being erased; otherwise the status is not valid. When using
data-polling, the address should remain stable throughout the
operation.
During a data-polling read, while
?W/E
is low, data bit
DQ7 can change asynchronously. Depending on the read tim-
ing, the system can read valid data on DQ7, while other DQ pins
are still invalid. A subsequent read of the device is valid.
Data-Polling DQ6
The function of toggle-bit status, is to output data on DQ6
that toggles between 1 and 0 while the write-state machine is
engaged in a program or erase operation. When toggle-bit DQ6
AS8F512K32
Rev. 5.4 08/10
stops toggling after two consecutive reads to the same address,
the operation is complete. The toggle-bit is only available dur-
ing the byte-programming, chip-erase, and sector-erase timing
delay. Toggle-bit data is valid after the raising edge of
?W/E
in the last bus cycle of the command sequence loaded into the
command register. Depending on the read timing, DQ6 can stop
toggling while other DQ pins are still invalid. A subsequent
read of the device is valid.
Exceed Time Limit DQ5
The program and erase operations use an internal pulse
counter to limit the number of pulses applied. If the pulse count
limit is exceeded, DQ5 is set to a 1 data state. This indicates
that the program or erase operation has failed. DQ7 will not
change from complemented data to true data and DQ6 will not
stop toggling when read. To continue operation, the device
must be reset.
This condition occurs when attempting to program a logic
1 state into a bit that has been programmed previously to a
logic 0. Only an erase operation can change bits from 0 to
1. After reset, the device is functional and can be erased and
reprogrammed.
Sector-Load- Timer DQ3
DQ3 is the sector-load timer status bit it determines if
the time to load additional sector addresses has expired. DQ3
remains a logic low for 80
μs
after completion of a sector-
erase sequence. This indicates another sector-erase command
sequence can be issued. If DQ3 is at logic high, it indicates
that the delay has expired and attempts to issue additional
sector-erase commands are ignored.
The data polling bit and toggle bit are valid during the 100
μs
time delay and can be used to determine if a valid sector erase
command has been issued. To ensure additional sector erase
commands have been accepted, the status of DQ3 should be
read before and after each additional sector-erase command. If
DQ3 is at a logic low on both reads, then the additional sector-
erase was accepted.
Micross Components reserves the right to change products or specifications without notice.
4
FLASH
AS8F512K32
DATA PROTECTION
Hardware-Sector Protection Feature
This feature disables both programming and erase opera-
tions on any combination of one to eight sectors. Commands
to program or erase a protected sector do not change the data
contained in the sector. The data-polling and toggle bits operate
for 2ms to 100ms and then return to valid data. This feature
is enabled using high-voltage V
ID
(11.5V to 12V) on address
pin A9 and control pin OE\ and V
IL
on control pin CE\.
The device is delivered with all sector unprotected.
Sector-unprotected mode is available to unprotect protected
sectors.
Sector Protect Operation
The sector protect mode is activated when WE\=V
IH
,
CE\=V
IL
, and address pin A9 and control pin OE\ are forced
to V
ID
. The sector-select address pins A18, A17, and A16 are
used to select the sector to be protected. Address pins A0-A15
and I/O pins DQ0- DQ7 must be stable and can be V
IL
or V
IH
.
Once the addresses are stable, WE\ is pulsed low for 100 ms.
The operation begins on the falling edge of WE\ and terminates
on the raising edge of WE\.
Sector Protect Verify
Verification of sector protection is activated when
WE\=V
IH
, CE\=V
IL
, OE\=V
IL
, and address pin A9 is V
ID
. Ad-
dress pins A0 and A6 are set to V
IL
, and A1 is set to V
IH
. The
sector address pins A18, A17, and A16 select the sector to be
verified. The other addresses can be V
IH
or V
IL
. If the sector
selected if protected, the DQs output O1. If the sector selected
is unprotected the DQs output is 00.
Sector protection can also be verified using the algorithm-
selection command. After issuing the three bus-cycle command
sequence, the sector protection status can be read on DQ0. Set
address pins A0 = V
IL
, A1 = V
IH
, and A6 = V
IL
. Sector ad-
dress pins A18, A17, and A16 select the sector to be verified.
The remaining addresses are set to V
IL
. If the sector selected
is protected. DQ0 outputs a 1 state, and if the sector selected
is unprotected DQ0 outputs a 0 state. This mode remains in
effect until another valid sequence is written to the device.
Sector Unprotect
Prior to sector unprotected, all sectors should be protected
using the sector unprotect mode. The sector unprotect is acti-
vated when WE\=V
IH
, and control pin CE\, OE\, and address
pin A9 are forced to V
ID
. Address pins A6, A12, and A16 are
set to V
IH
. The sector select address pins A18, A17, and A16
can be V
IL
or V
IH
. All eight sectors are unprotected in parallel.
Once the inputs are stable, WE\ is pulsed low for 10ms. The
unprotect operation begins on the falling edge of WE\ and
terminates on the raising edge of WE\.
Sector Unprotect Verify
Verification of the sector unprotected is activated when
WE\ = V
IH
, OE\ = V
IL
, CE\ = V
IL
, and address pin A9 = V
ID
.
Select the sector to be verified. Address A1 and A6 are set to
V
IH
and A0 to V
IL
. The other addresses can be V
IL
or V
IH
. If
the sector selected is protected, the DQs output a 01, if sector
selected is unprotected the DQs output a 00. Sector unprotect
can also be read using the algorithm selection command.
Low VCC Write Lock Out
During power-up and power-down , are locked out for
V
CC
less than VLKO If V
CC
<VLKO, the command inputs is
disabled and the device is reset to the read mode. On power-up,
if CE\=V
IL
, WE\= V
IL
, and OE\=V
IH
, the device does not accept
commands on the raising edge of WE. The device automatically
powers up in the read mode.
Glitiching
Pulses of less than 5ns (typical) on WE\, OE\, and CE\ will
not issue a write cycle.
Power Supply Consideration
Each device should have as a maximum of 0.1 mF ceramic
capacitor connected between Vcc and Vss to suppress circuit
noise. Printed circuit traces to Vcc should have be appropriate
to handle the current demand and minimize inductance.
AS8F512K32
Rev. 5.4 08/10
Micross Components reserves the right to change products or specifications without notice.
5
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