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MUR440X0G

产品描述Rectifier Diode, 1 Phase, 1 Element, 4A, 400V V(RRM), Silicon, DO-201AD,
产品类别分立半导体    二极管   
文件大小423KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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MUR440X0G概述

Rectifier Diode, 1 Phase, 1 Element, 4A, 400V V(RRM), Silicon, DO-201AD,

MUR440X0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明O-PALF-W2
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.28 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压400 V
最大反向电流10 µA
最大反向恢复时间0.05 µs
表面贴装NO
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
Base Number Matches1

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4.0AMPS. Ultrafast Glass Passivated Rectifiers
DO-201AD
Features
Ideally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
Ultrafast recovery time for high efficiency
Excellent high temperature switching
Glass passivated junction
Green compound with suffix "G" on packing
code & prefix "G" on datecode
MUR420 - MUR460
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260℃/10s
Mounting position: Any
Weight:1.2 grams
Ordering Information (example)
Part No.
Package
Packing
INNER
TAPE
52mm
Packing
code
A0
Packing code
(Green)
A0G
MUR420 DO-201AD 500 / AMMO box
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage (Note 1)
@4A
Maximum DC Reverse Current @ T
A
=25
at Rated DC Blocking Voltage @ T
A
=125
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse test: tp = 300uS, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
rr
Cj
R
θJA
T
J
T
STG
MUR420
200
140
200
MUR440
400
280
400
4
125
MUR460
600
420
600
Units
V
V
V
A
A
0.89
5
150
25
65
28
-55 to + 150
-55 to + 150
1.28
10
250
50
O
V
uA
nS
pF
C/W
O
O
C
C
Note 2: Reverse Recovery Test Condition:IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Version:F13

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