PD- 95139
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High Speed Power Switching
l
Lead-Free
Benefits
l
Low Gate Charge Qg Results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss specified (See AN 1001)
IRF830AS/LPbF
HEXFET
®
Power MOSFET
V
DSS
500V
R
DS(on)
max
1.40Ω
I
D
5.0A
D
2
Pak
TO-262
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.0
3.2
20
3.1
74
0.59
± 30
5.3
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l
l
Two Transistor Forward
Half Bridge and Full Bridge
Notes
through
are on page 10
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1
04/21/04
IRF830AS/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.60
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
–––
V/°C Reference to 25°C, I
D
= 1mA
1.4
Ω
V
GS
= 10V, I
D
= 3.0A
4.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 500V, V
GS
= 0V
µA
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 3.0A
24
I
D
= 5.0A
6.3
nC V
DS
= 400V
11
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 250V
–––
I
D
= 5.0A
ns
–––
R
G
= 14Ω
–––
R
D
= 49Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
10
21
21
15
620
93
4.3
886
27
39
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
230
5.0
7.4
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
–––
Max.
1.7
40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2
Conditions
D
MOSFET symbol
5.0
––– –––
showing the
A
G
integral reverse
20
––– –––
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
––– 430 650
ns
T
J
= 25°C, I
F
= 5.0A
––– 2.0 3.0
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
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IRF830AS/LPbF
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1
1
0.1
4.5V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
4.5V
0.01
0.1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
= 5.0A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.0
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1.5
1.0
0.5
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
7.0
5.0
6.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF830AS/LPbF
10000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rs s
=
C
oss
=
0V,
f = 1M Hz
C
g s
+ C
g d
, C
d s
SHO RTE D
C
gd
C
ds
+ C
gd
20
I
D
= 5.0A
16
C, Capacitance (pF)
1000
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C
iss
12
100
C
os s
8
10
4
C
rss
1
1
10
100
1000
A
0
FOR TEST CIRCUIT
SEE FIGURE 13
16
20
0
4
8
12
24
V
D S
, D ra in-to-S ource V oltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
10us
10
10
T
J
= 150
°
C
100us
1ms
10ms
1
1
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF830AS/LPbF
5.0
V
DS
V
GS
R
D
4.0
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
3.0
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
1.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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