1 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-30311
Features
• Internally Biased, Single 3 V
Supply (6 mA)
• 3.5 dB NF
• 13 dB Gain
• Unconditionally Stable
SOT-143 Surface Mount
Package
Description
Hewlett-Packard’s INA-30311 is a
Silicon monolithic amplifier for
applications to 1.0 GHz. Packaged
in a miniature SOT-143 package,
it requires very little board space.
The INA-30311 uses an internally
biased topology which eliminates
the need for external components
and provides decreased sensitiv-
ity to ground inductance.
The INA-30311 is designed with
an output impedance that varies
from near 200
Ω
at low
frequencies to near 50
Ω
at higher
frequencies. This provides a
matching advantage for IF
circuits, as well as improved
power efficiency, making it
suitable for battery powered
designs.
The INA-30311 is fabricated using
HP’s 30 GHz f
MAX
ISOSAT
TM
Silicon bipolar process which
uses nitride self-alignment sub-
micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
Applications
• LNA or IF Amplifier for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM, and
Wireless LAN Applications
Pin Connections and
Package Marking
INPUT
GND
N30
V
CC
RF
OUTPUT
V
CC
OUTPUT
Equivalent Circuit (Simplified)
RF
INPUT
GROUND
5963-6679E
6-140
Absolute Maximum Ratings
Symbol
V
CC
P
in
T
j
T
STG
Parameter
Device Voltage, to ground
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
dBm
°C
°C
Absolute
Maximum
[1]
12
+13
150
-65 to 150
Thermal Resistance
[2]
:
θ
j-c
= 550°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25°C (T
C
is defined to be the
temperature at the package pins where
contact is made to the circuit board).
INA-30311 Electrical Specifications
[3]
, T
C
= 25°C, Z
O
= 50
Ω,
V
CC
= 3 V
Symbol
G
p
NF
P
1dB
IP
3
VSWR
I
cc
ι
d
Parameters and Test Conditions
Power Gain (|S
21
|
2
)
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Input VSWR
Device Current
Group Delay
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
mA
ps
Units
dB
dB
dBm
dBm
Min.
11
Typ.
13
3.5
-11
-2
1.7
6.3
325
7.5
Max.
INA-30311 Typical Scattering Parameters
[3]
, T
C
= 25°C, Z
O
= 50
Ω,
V
CC
= 3 V
Freq.
GHz
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.50
S
11
Mag
Ang
0.09
0.09
0.10
0.13
0.16
0.18
0.21
0.22
0.24
0.25
0.26
0.27
0.27
0.27
0.27
0.27
0.27
0.26
0.26
-1
-2
-6
-16
-29
-42
-59
-75
-92
-107
-122
-144
-162
-177
173
163
156
150
147
dB
16.12
16.11
16.12
16.14
16.07
15.90
15.56
15.04
14.34
13.44
12.53
10.50
8.50
6.69
5.01
3.58
2.35
1.21
0.75
S
21
Mag
6.40
6.39
6.40
6.41
6.36
6.24
6.00
5.65
5.21
4.70
4.23
3.35
2.66
2.16
1.78
1.51
1.31
1.15
1.09
Ang
-6
-12
-25
-38
-52
-66
-81
-95
-109
-122
-135
-155
-173
172
159
147
136
126
122
dB
-38.1
-38.2
-38.4
-38.9
-39.4
-40.1
-40.7
-40.7
-39.6
-37.6
-35.5
-32.3
-29.6
-27.5
-25.7
-24.1
-22.5
-21.4
-20.9
S
12
Mag
0.012
0.012
0.012
0.011
0.011
0.010
0.009
0.009
0.011
0.013
0.017
0.024
0.033
0.042
0.052
0.062
0.075
0.085
0.091
S
22
Ang
2
4
8
13
19
27
40
57
74
86
94
100
101
100
99
97
95
92
91
Mag
0.57
0.56
0.56
0.55
0.54
0.52
0.50
0.47
0.46
0.44
0.43
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.41
Ang
-1
-3
-7
-11
-14
-18
-20
-23
-24
-24
-25
-26
-27
-28
-30
-32
-35
-37
-39
K
Factor
4.35
4.43
4.41
4.83
4.88
5.60
6.58
7.26
6.49
6.23
5.35
4.83
4.43
4.31
4.22
4.17
3.97
4.04
3.99
Note:
3. Reference plane per Figure 9 in Applications Information section.
6-141
INA-30311 Typical Performance,
T
C
= 25°C, Z
O
= 50
Ω,
V
CC
= 3 V
20
4.0
3.5
NOISE FIGURE (dB)
0
2.7 V
3.0 V
3.3 V
-2
-4
P 1 dB (dBm)
15
GAIN (dB)
3.0
2.5
2.0
1.5
1.0
0.5
-6
-8
-10
-12
3.3 V
3.0 V
2.7 V
1.5
10
3.3 V
3.0 V
2.7 V
5
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-14
0.1
0.3
0.5
0.7
0.9
1.1
1.3
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Power Gain vs. Frequency
and Voltage.
Figure 2. Noise Figure vs. Frequency
and Voltage.
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
20
5
+85
+25
-40
3
P 1 dB (dBm)
-8
10
-40
+25
+85
NOISE FIGURE (dB)
15
GAIN (dB)
4
-9
-10
+85
+25
-40
2
5
1
0
0.1
-11
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-12
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and
Temperature.
Figure 5. Noise Figure vs. Frequency
and Temperature.
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and
Temperature.
4.0
3.5
16
12
VSWR (n:1)
3.0
2.5
2.0
4
OUTPUT
I
CC
(mA)
8
1.5
INPUT
1
0.1
0
+85
+50
+25
0
-40
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
1
2
3
4
5
FREQUENCY (GHz)
V
CC
(V)
Figure 7. Input and Output VSWR vs.
Frequency.
Figure 8. Supply Current vs. Voltage
and Temperature.
6-142
INA-30311 Applications
Information
Introduction
The INA-30311 is a silicon RF
integrated circuit that provides an
easy-to-use solution for low noise
or multi-purpose gain block
applications up to 1000 MHz. This
two-stage amplifier design uses
resistive feedback to provide flat
gain over a wide frequency range.
This device is assembled in a
miniature, surface mount package
and is intended for use in low
cost wireless communication
products.
A unique feature of the INA-30311
is that it is designed with a 50
Ω
input impedance and an output
impedance that approaches 200
Ω
at lower frequencies. This imped-
ance converting feature is very
useful for applications such as
receiver IF circuits in which the
INA-30311 is followed by high
input impedance devices like
signal processing circuits, filters,
or mixed signal ICs.
In addition to simplifying the
match to higher impedance
devices, a key benefit of the
higher output impedance feature
is an improvement in power
efficiency.
Phase Reference Planes
The positions of the reference
planes used to measure
S-Parameters are shown in
Figure 9. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
REFERENCE
PLANES
Biasing
The INA-30311 is a voltage biased
device and operates from a single
+3 volt power supply. With a
current drain of 6 mA, this
amplifier is suitable for use in
battery powered applications. All
bias circuitry is fully integrated
into the IC eliminating the need
for external DC components. RF
performance is very stable for
3-volt battery supplies that may
range from 2.7 to 3.3 volts,
depending on battery “freshness”
or state of charge in the case of
rechargeable batteries.
While the INA-30311 was
designed for use in +3 volt battery
powered applications, the
internal bias regulation circuitry
allows it to be used with any
power supply voltage from +2.7
to +5 volts.
Typical Configurations
The way in which the INA-30311
is used depends on the particular
application and operating
frequency.
• For receiver IF amplifier appli-
cations up to several hundred
MHz, the relatively higher out-
put impedance level of the
INA-30311 may be used to
advantage when interfacing
directly with devices having
higher than 50
Ω
input imped-
ances, such as certain signal
processing or mixed signal ICs.
This application is shown in
Figure 10.
• A second implementation,
shown in Figure 11, uses a
simple reactive network at the
amplifier’s output to match the
output impedance to 50
Ω.
This matched output arrangement
will provide an additional 0.9 dB
of gain and output power at
900 MHz when driving into a 50
Ω
stage.
• The third way to use the INA-
30311 is to simply cascade
several INA-30311’s with 50
Ω
stages and neglect the effects of
the output mismatch.
The 50
Ω
cascade without
impedance matching, shown in
Figure 12, trades off the
improvement in stage gain and
output power for a more
simplified interstage circuit and
reduced circuit board space.
INA-30
MATCHED
50
Ω
OUTPUT
Figure 11. Impedance Matched
Output.
50
Ω
INPUT
INA-30
INA-30
HIGH Z
OUTPUT
INA-30
HIGH INPUT
IMPEDANCE
STAGE
Figure 12. Simple Cascade without
Impedance Matching.
TEST CIRCUIT
Figure 10. INA-30311 Driving a High
Input Impedance Stage.
Figure 9. Reference Planes.
6-143
Operating Details
The basic application of the INA-
30311 is shown in Figure 13. DC
blocking capacitors should be
placed in series with the RF Input
and RF Output to isolate adjoin-
ing circuits from the internal bias
voltages that are present at these
terminals. The values of the
blocking capacitors are deter-
mined by the lowest frequency of
operation for a particular applica-
tion. The capacitor’s reactances
are chosen to be 5% or less of the
amplifier’s input or output imped-
ance at the lowest operating
frequency. For example, an ampli-
fier to be used in an application
covering the 902 to 928 MHz band
would require an input blocking
capacitor of at least 70 pF, which
is 2.5
Ω
of reactance, or 5% of
50
Ω
at 902 MHz.
The V
CC
connection to the amplifier
must be RF bypassed by placing a
capacitor to ground directly at
the bias pin of the package. Like
the DC blocking capacitors, the
value of the V
CC
bypass capacitor
is determined by the lowest
operating frequency for the ampli-
fier. This value is typically the
same as that of the DC blocking
capacitors. If long bias lines are
used to the amplifier to the V
CC
supply, additional bypass
capacitors may be needed to
prevent resonances that would
otherwise result in undesirable
gain responses. A well-bypassed
V
CC
line is also desirable to
prevent possible oscillations that
may occur due to feedback
through the bias line from other
stages in a cascade.
Adequate grounding is needed to
obtain maximum performance.
The ground pin of the INA-30311
should be connected to directly
to RF ground by using plated
through holes (vias) near the
package terminals.
FR-4 or G-10 PCB material is a
good choice for most low cost
wireless applications. Typical
board thickness is 0.025 or
0.031 inches. The width of 50
Ω
microstriplines in these PCB
thicknesses is also convenient for
mounting chip components such
as the series DC blocking
capacitors.
50
Ω
Example
The demonstration circuit in Figure
14 shows the INA-30311 used
without output impedance
matching and is an example of the
cascade depicted in Figure 12. This
layout illustrates the simplest
implementation of the INA-30311
by using 50
Ω
microstriplines
with DC blocking capacitors for
both the input and output. The
V
CC
supply connection is RF
bypassed very close to the lead of
the RFIC. Provision is also made
for an additional bypass capacitor
on the V
CC
line near the edge of
the PCB.
900 MHz Matched Example
This section describes a
demonstration circuit for
900 MHz that is based on the
matched output configuration
shown in Figure 11.
The output VSWR of the INA-
30311 is approximately 2.6:1 at
900 MHz and results in a 0.9 dB
mismatch loss when used in a
50
Ω
system. The use of a simple
impedance matching circuit at the
output will increase both gain and
output power by 0.9 dB. The
noise figure of the amplifier
remains the same and does not
depend on whether or not the
output is matched.
There are many circuit topologies
that may be used to match the
output impedance of the
INA-30311 to a 50
Ω
load. The
example presented in Figure 15 is
designed to match the amplifier’s
output for frequencies near
900 MHz.
This circuit is representative for
applications in the 800 MHz
cellular or 900 MHz unregulated
frequency bands. This example
uses a series capacitor to resonate
with a shunt, high impedance
transmission line. The transmis-
sion line is tapped at a 50
Ω
level
for the output. This circuit
provides the desired impedance
transformation with a minimum
of components, using only one
chip capacitor that also doubles
as the output DC block.
RF
OUTPUT
RF
INPUT
V
CC
Figure 13. Basic Amplifier
Application.
6-144
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