PD- 94504
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Motor Control
l
Uninterrutible Power Supplies
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
IRF1312
IRF1312S
IRF1312L
I
D
95A
V
DSS
80V
R
DS(on)
max
10mΩ
TO-220AB
IRF1312
D
2
Pak
IRF1312S
TO-262
IRF1312L
Max.
95
67
380
3.8
210
1.4
± 20
5.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Notes
through
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
are on page 11
Typ.
–––
0.50
–––
–––
Max.
0.73
–––
62
40
Units
°C/W
www.irf.com
1
7/01/02
IRF1312/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
80
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.078
6.6
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
10
mΩ V
GS
= 10V, I
D
= 57A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
1.0
V
DS
= 76V, V
GS
= 0V
µA
250
V
DS
= 64V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
92
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
93
36
34
25
130
47
51
5450
550
340
1910
380
620
Max. Units
Conditions
–––
S
V
DS
= 25V, I
D
= 57A
140
I
D
= 57A
–––
nC V
DS
= 40V
–––
V
GS
= 10V,
–––
V
DD
= 40V
–––
I
D
= 57A
ns
–––
R
G
= 4.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 64V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
250
57
21
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 95
showing the
A
G
integral reverse
––– ––– 380
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 57A, V
GS
= 0V
––– 64
96
ns
T
J
= 25°C, I
F
= 57A
––– 150 230
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
www.irf.com
IRF1312/S/L
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
1
10
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
5.0V
0.01
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.5
ID, Drain-to-Source Current
(
A)
100.00
T J = 175°C
RDS(on) , Drain-to-Source On Resistance
ID = 95A
VGS = 10V
2.0
T J = 25°C
1.00
(Normalized)
10.00
1.5
0.10
1.0
0.01
5
6
7
VDS = 25V
20µs PULSE WIDTH
8
9
10
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF1312/S/L
100000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
ID= 57A
C ds
16
VDS= 64V
VDS= 40V
VDS= 16V
C, Capacitance (pF)
10000
12
Ciss
8
1000
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
1
10
100
0
40
80
120
160
200
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100.0
T J = 175°C
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10.0
1.0
T J = 25°C
10msec
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
1.8
0.1
100
1000
VDS , Drain-toSource Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1312/S/L
100
LIMITED BY PACKAGE
80
ID , Drain Current (A)
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
60
V
GS
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
0.1
0.05
0.02
0.01
J
= P
DM
x Z
thJC
0.01
0.00001
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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