IRFP9150
Data Sheet
January 2002
25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
Formerly developmental type TA49230.
Features
• 25A, 100V
• r
DS(ON)
= 0.150
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
Ordering Information
PART NUMBER
IRFP9150
PACKAGE
TO-247
BRAND
IRFP9150
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFP9150 Rev. B
IRFP9150
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP9150
-100
-100
-25
-18
-100
±
20
150
1.2
1300
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 10k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
=100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
as
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
TEST CONDITIONS
V
GS
= 0V, I
D
= -250
µ
A (Figure 10)
V
DS
= V
GS
, I
D
= -250
µ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
MIN
1
-2.0
-
-
-25
-
-
4
-
-
-
-
TYP
-
-
-
-
-
-
0.090
10
16
110
65
46
82
14
42
2400
850
400
5.0
MAX
-
-4.0
25
250
-
±
100
0.150
-
24
160
100
70
120
-
-
-
-
-
-
UNITS
V
V
µ
A
µ
A
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
DS
> I
D(ON)
x
r
DS(ON)MAX,
V
GS
= 10V
V
GS
=
±
20V
V
GS
= -10V, I
D
= -10A (Figure 8, 9)
V
DS
≤
-10V, I
D
= -12.5A (Figure 12)
V
DD
= -50V, I
D
≈
-25A, R
G
= 6.8
Ω
, R
L
= 2
Ω
(Figures 17 and 18) MOSFET switching times are es-
sentially independent of operating temperature).
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
V
GS
= -10V, I
D
= -25A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
(Gate Charge is Essentially Independent Of Operat-
ing Temperature)
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz
(Figure 11)
-
-
-
-
-
-
Measured From the Drain
Lead, 6mm (0.25in) From
the Package to the Center
of the Die
Measured From the Source
Pin, 6mm (0.25in) From
Header to the Source
Bonding Pad
Modified MOSFET
Symbol Showing the In-
ternal Device Induc-
tances
D
L
D
G
L
S
S
-
Internal Source Inductance
L
S
-
13
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θ
JC
R
θ
JA
Free Air Operation
-
-
-
-
0.83
30
o
C/W
0
C/W
©2002 Fairchild Semiconductor Corporation
IRFP9150 Rev. B
IRFP9150
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
-25
-100
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -25A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= -25A, dI
SD
/dt = 100A/
µ
s
T
J
= 25
o
C, I
SD
= -25A, dI
SD
/dt = 100A/
µ
s
-
-
0.3
-0.9
150
0.7
-1.5
300
1.5
V
ns
µ
C
2. Pulse test: pulse width
≤
300
µ
s, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3
4. V
DD
= 25V, start T
J
= 25
o
C, L = 3.2mH, R
G
= 25
Ω,
peak I
AS
= 25A (Figures 15, 16).
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
-30
-25
I
D
, DRAIN CURRENT (A)
-20
-15
-10
-5
0.8
0.6
0.4
0.2
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
DUTY CYCLE IN DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1
0.10
P
DM
t
1
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t
1
, SQUARE WAVE PULSE DURATION (s)
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFP9150 Rev. B
IRFP9150
Typical Performance Curves
200
IRFP9150,1
100
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
-80
Unless Otherwise Specified
(Continued)
-100
V
GS
= 14V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 12V
10ms
IRFP9150,1
100ms
10
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
1
1
V
GS
= 10V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
-60
-40
0.1s
1s
IRFP9150
IRFP9151
DC
100
-20
V
GS
= 4V
0
-10
-20
-30
V
GS
= 6V
V
GS
= 5V
-40
-50
10
V
DS
, DRAIN VOLTAGE (V)
(V
DS
), DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
I
D(ON),
DRAIN TO SOURCE CURRENT (A)
-50
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≤
-50V
-10
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
-40
-30
-20
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
-1
-10
0
0
-1
-2
-3
-4
-5
-0.1
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
-10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
350
300
ON RESISTANCE (mΩ)
250
200
150
100
50
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
2.2
r
DS(ON),
DRAIN TO SOURCE
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= -10A
1.4
1.0
V
GS
= 20V
0.6
0.2
0
-20
-40
-60
-80
-100
-40
I
D
, DRAIN CURRENT (A)
0
40
80
T
J
, JUNCTION TEMPERATURE (
o
C)
120
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
IRFP9150 Rev. B
IRFP9150
Typical Performance Curves
1.25
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
4000
1.15
C, CAPACITANCE (pF)
3500
3000
2500
2000
1500
1000
500
0.75
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
0
C
RSS
-10
-20
-30
-40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-50
C
OSS
C
ISS
Unless Otherwise Specified
(Continued)
4500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
0.95
0.85
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
g
fs,
TRANSCONDUCTANCE (S)
12
150
o
C
9
25
o
C
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
SD
, DRAIN CURRENT (A)
10
150
o
C
1
25
o
C
6
3
0
-10
-20
-30
I
D
, DRAIN CURRENT (A)
-40
-50
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
€=
-25A
-5
V
DS
€€=
-80V
-10
V
DS
€€=
-50V
-15
V
DS
€€=
-20V
-20
0
20
40
60
80
100
120
140
160
180
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP9150 Rev. B
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