380BV25
PRELIMINARY
CY7C1380BV25
CY7C1382BV25
512K x 36 / 1M x 18 Pipelined SRAM
Features
Fast clock speed: 200, 167, 150, 133 MHz
Provide high-performance 3-1-1-1 access rate
Fast OE access times: 3.0, 3.4, 3.8, 4.2 ns
Optimal for depth expansion
2.5V (±5%) Operation
Common data inputs and data outputs
Byte Write Enable and Global Write control
Chip enable for address pipeline
Address, data, and control registers
Internally self-timed WRITE CYCLE
Burst control pins (interleaved or linear burst se-
quence)
• Automatic power-down for portable applications
• High-density, high-speed packages
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(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), burst control in-
puts (ADSC, ADSP and ADV), Write Enables (BWa, BWb,
,
BWc, BWd and BWE), and global write (GW).
Asynchronous inputs include the output enable (OE) and burst
mode control (MODE). The data (DQ
a,b,c,d
) and the data parity
(DQP
a,b,c,d
) outputs, enabled by OE, are also asynchronous.
DQ
a,b,c,d
and DQP
a,b,c,d
apply to CY7C1380BV25 and DQ
a,b
and DQP
a,b
apply to CY7C1382BV25. a, b, c, d each are of 8
bits wide in the case of DQ and 1 bit wide in the case of DP
.
Addresses and chip enables are registered with either address
status processor (ADSP) or address status controller (ADSC)
input pins. Subsequent burst addresses can be internally gen-
erated as controlled by the burst advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate self-timed WRITE cycle. WRITE cycles can be one
to four bytes wide as controlled by the write control inputs.
Individual byte write allows individual byte to be written. BWa
controls DQa and DQPa. BWb controls DQb and DQPb. BWc
controls DQc and DQPd. BWd controls DQd-DQd and DQPd.
BWa, BWb BWc, and BWd can be active only with BWE being
LOW. GW being LOW causes all bytes to be written. WRITE
pass-through capability allows written data available at the out-
put for the immediately next READ cycle. This device also in-
corporates pipelined enable circuit for easy depth expansion
without penalizing system performance.
All inputs and outputs of the CY7C1380BV25 and the
CY7C1382BV25 are JEDEC standard JESD8-5 compatible.
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced tri-
ple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1382BV25 and CY7C1380BV25 SRAMs integrate
1,048,576x18 and 524,288x36 SRAM cells with advanced
synchronous peripheral circuitry and a 2-bit counter for inter-
nal burst operation. All synchronous inputs are gated by reg-
isters controlled by a positive-edge-triggered clock input
Selection Guide
200 MHz
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Shaded areas contain advance information.
167 MHz
3.4
350
30
150 MHz
3.8
310
30
133 MHz
4.2
280
30
3.0
Commercial
400
30
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
November 30, 2000
PRELIMINARY
Pin Definitions
Name
A0
A1
A
BWa
BWb
BWc
BWd
GW
I/O
Input-
Synchronous
Input-
Synchronous
CY7C1380BV25
CY7C1382BV25
Description
Address Inputs used to select one of the address locations. Sampled at the
rising edge of the CLK if ADSP or ADSC is active LOW, and CE
1,
CE
2,
and
CE
3
are sampled active. A
[1:0]
feed the 2-bit counter.
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte
writes to the SRAM. Sampled on the rising edge of CLK.
Input-
Synchronous
Input-
Synchronous
Input-Clock
BWE
CLK
CE
1
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Asynchronous
CE
2
CE
3
OE
ADV
ADSP
Input-
Synchronous
Input-
Synchronous
ADSC
Input-
Synchronous
MODE
Input-
Static
Input-
Asynchronous
I/O-
Synchronous
ZZ
DQa, DQPa
DQb, DQPb
DQc, DQPc
DQd, DQPd
TDO
TDI
TMS
JTAG serial
output
Synchronous
JTAG serial
input
Synchronous
Test Mode Select
Synchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising
edge of CLK, a global write is conducted (ALL bytes are written, regardless of
the values on BW
a,b,c,d
and BWE).
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This
signal must be asserted LOW to conduct a byte write.
Clock Input. Used to capture all synchronous inputs to the device. Also used
to increment the burst counter when ADV is asserted LOW, during a burst
operation.
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used
in conjunction with CE
2
and CE
3
to select/deselect the device. ADSP is ig-
nored if CE
1
is HIGH.
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used
in conjunction with CE
1
and CE
3
to select/deselect the device. (TQFP Only)
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used
in conjunction with CE
1
and CE
2
to select/deselect the device. (TQFP Only)
Output Enable, asynchronous input, active LOW. Controls the direction of the
I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH,
I/O pins are three-stated, and act as input data pins. OE is masked during the
first clock of a read cycle when emerging from a deselected state.
Advance Input signal, sampled on the rising edge of CLK. When asserted, it
automatically increments the address in a burst cycle.
Address Strobe from Processor, sampled on the rising edge of CLK. When
asserted LOW, A is captured in the address registers. A
[1:0]
are also loaded
into the burst counter. When ADSP and ADSC are both asserted, only ADSP
is recognized. ASDP is ignored when CE
1
is deasserted HIGH.
Address Strobe from Controller, sampled on the rising edge of CLK. When
asserted LOW, A
[x:0]
is captured in the address registers. A
[1:0]
are also loaded
into the burst counter. When ADSP and ADSC are both asserted, only ADSP
is recognized.
Selects Burst Order. When tied to GND selects linear burst sequence. When
tied to V
DDQ
or left floating selects interleaved burst sequence. This is a strap
pin and should remain static during device operation.
ZZ “sleep” Input. This active HIGH input places the device in a non-time critical
“sleep” condition with data integrity preserved.
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register
that is triggered by the rising edge of CLK. As outputs, they deliver the data
contained in the memory location specified by A during the previous clock rise
of the read cycle. The direction of the pins is controlled by OE. When OE is
asserted LOW, the pins behave as outputs. When HIGH, DQx and DPx are
placed in a three-state condition.
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK
(BGA Only).
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK (BGA
Only).
This pin controls the Test Access Port state machine. Sampled on the rising
edge of TCK (BGA Only).
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