PD- 94239A
IRGPS60B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Motor Control Co-Pack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
V
CES
= 1200V
V
CE(on)
typ. = 2.50V
G
E
@ V
GE
= 15V,
N-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
I
CE
= 60A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
105
60
240
240
120
60
240
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Le
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.41
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
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1
8/18/04
IRGPS60B120KD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆
V
GE(th)
/
∆
T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 1200 –––
Temperature Coeff. of Breakdown Voltage ––– 0.40
Collector-to-Emitter Saturation Voltage ––– 2.33
––– 2.50
––– 2.79
––– 3.04
Gate Threshold Voltage
4.0 5.0
Temperature Coeff. of Threshold Voltage ––– -12
Forward Transconductance
––– 34.4
Zero Gate Voltage Collector Current
––– –––
––– 650
Diode Forward Voltage Drop
––– 1.82
––– 1.93
––– 1.96
––– 2.13
Gate-to-Emitter Leakage Current
––– –––
Ref.Fig.
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 500µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
5, 6
2.50
I
C
= 50A
V
GE
= 15V
7, 9
2.75
V
I
C
= 60A
10
3.1
I
C
= 50A, T
J
= 125°C
3.5
I
C
= 60A, T
J
= 125°C
11
9,10
6.0
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
11 ,12
–––
S
V
CE
= 50V, I
C
= 60A, PW=80µs
500
µA
V
GE
= 0V, V
CE
= 1200V
1350
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
2.10
I
C
= 50A
8
2.20
V
I
C
= 60A
2.20
I
C
= 50A, T
J
= 125°C
2.40
I
C
= 60A, T
J
= 125°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Qg
Qge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
340 510
I
C
= 60A
40
60
nC V
CC
= 600V
165 248
V
GE
= 15V
3214 4870
µJ
I
C
= 60A, V
CC
= 600V
4783 5450
V
GE
= 15V,R
G
= 4.7Ω, L =200µH
8000 10320
Ls = 150nH
T
J
= 25°C
5032 6890
T
J
= 125°C
7457 8385
µJ
Energy losses include "tail" and
12500 15275
diode reverse recovery.
72
94
I
C
= 15A, V
CC
= 600V
32
45
V
GE
= 15V, R
G
= 4.7Ω L =200µH
366 400
ns
Ls = 150nH, T
J
= 125°C
45
58
4300 –––
V
GE
= 0V
395 –––
pF
V
CC
= 30V
160 –––
f = 1.0MHz
T
J
= 150°C, I
C
= 240A, Vp =1200V
FULL SQUARE
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7Ω
T
J
= 150°C, Vp =1200V
10 ––– –––
µs V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7Ω
––– 3346 –––
µJ
T
J
= 125°C
––– 180 –––
ns
V
CC
= 600V, I
F
= 60A, L =200µH
––– 50 –––
A
V
GE
= 15V,R
G
= 4.7Ω, Ls = 150nH
Ref.Fig.
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
SCSOA
Erec
t
rr
I
rr
Short Circuit Safe Operting Area
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
20, 21
CT4,WF3
2
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IRGPS60B120KD
140
LIMITED BY PACKAGE
120
100
600
500
700
P tot (W)
0
20
40
60
80
100 120 140 160
IC (A)
80
60
40
20
0
400
300
200
100
0
0
50
100
150
200
T C (°C)
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
1000
100
2 µs
10 µs
100
IC (A)
10
DC
1
100 µs
1ms
IC A)
10
1
10
100
1000
10000
10ms
0.1
1
10
100
VCE (V)
1000
10000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
JS
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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3
IRGPS60B120KD
120
100
80
ICE (A)
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0
1
2
3
VCE (V)
4
5
60
40
20
0
0
1
2
3
VCE (V)
4
5
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
120
100
80
ICE (A)
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
IF (A)
-40°C
25°C
125°C
60
40
20
0
0
1
2
3
VCE (V)
4
5
60
40
20
0
0
1
VF (V)
2
3
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
4
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IRGPS60B120KD
20
18
16
14
VCE (V)
VCE (V)
20
18
16
14
ICE = 30A
ICE = 60A
ICE = 120A
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
5
10
VGE (V)
15
20
ICE = 30A
ICE = 60A
ICE = 120A
12
10
8
6
4
2
0
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
500
450
400
350
ICE (A)
T J = 25°C
T J = 125°C
VCE (V)
12
10
8
6
4
2
5
10
VGE (V)
ICE = 30A
ICE = 60A
ICE = 120A
300
250
200
150
100
50
0
0
5
10
VGE (V)
T J = 125°C
T J = 25°C
15
20
15
20
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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