BXY44-TES,BXY44-TES pdf中文资料,BXY44-TES引脚图,BXY44-TES电路-Datasheet-电子工程世界

BXY44-TES: 产品描述Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2; 产品类别分立半导体二极管; 文件大小190KB，共5页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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BXY44-TES概述

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2

BXY44-TES规格参数

参数名称	属性值
厂商名称	Infineon(英飞凌)
包装说明	O-CELF-R2
针数	2
Reach Compliance Code	compliant
其他特性	HIGH RELIABILITY
应用	ATTENUATOR; SWITCHING
最小击穿电压	200 V
外壳连接	ISOLATED
配置	SINGLE
最大二极管电容	0.35 pF
标称二极管电容	0.2 pF
二极管元件材料	SILICON
最大二极管正向电阻	5 Ω
二极管电阻测试电流	1 mA
二极管电阻测试频率	100 MHz
二极管类型	PIN DIODE
JESD-30 代码	O-CELF-R2
JESD-609代码	e3
少数载流子标称寿命	0.8 µs
元件数量	1
端子数量	2
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	LONG FORM
最大功率耗散	0.5 W
认证状态	Not Qualified
参考标准	ESA-SCC-5513/030
反向测试电压	50 V
表面贴装	YES
技术	POSITIVE-INTRINSIC-NEGATIVE
端子面层	MATTE TIN
端子形式	WRAP AROUND
端子位置	END
Base Number Matches	1

BXY44-TES相似产品对比

	BXY44-TES	BXY44-T1S	BXY44-T1ES	BXY44-T1P	BXY44-T1H	BXY44-TP
描述	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
包装说明	O-CELF-R2	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CELF-R2
针数	2	2	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
应用	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING
最小击穿电压	200 V	200 V	200 V	200 V	200 V	200 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最大二极管电容	0.35 pF	0.35 pF	0.35 pF	0.35 pF	0.35 pF	0.35 pF
标称二极管电容	0.2 pF	0.2 pF	0.2 pF	0.2 pF	0.2 pF	0.2 pF
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最大二极管正向电阻	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω
二极管电阻测试电流	1 mA	1 mA	1 mA	1 mA	1 mA	1 mA
二极管电阻测试频率	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
二极管类型	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
JESD-30 代码	O-CELF-R2	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CELF-R2
JESD-609代码	e3	e3	e3	e3	e3	e3
少数载流子标称寿命	0.8 µs	0.8 µs	0.8 µs	0.8 µs	0.8 µs	0.8 µs
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	LONG FORM
最大功率耗散	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
参考标准	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030
反向测试电压	50 V	50 V	50 V	50 V	50 V	50 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	WRAP AROUND	GULL WING	GULL WING	GULL WING	GULL WING	WRAP AROUND
端子位置	END	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	END
厂商名称	Infineon(英飞凌)	-	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
Base Number Matches	1	1	1	1	1	-

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