• Available in Pb-free and non-Pb-free 32-pin (450
mil-wide) SOIC, 32-pin STSOP and 32-pin TSOP-I
Functional Description
[1]
The CY62128BN is a high-performance CMOS static RAM
organized as 128K words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE
1
), an active
HIGH Chip Enable (CE
2
), an active LOW Output Enable (OE),
and tri-state drivers. This device has an automatic
power-down feature that reduces power consumption by more
than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable
One (CE
1
) and Write Enable (WE) inputs LOW and Chip
Enable Two (CE
2
) input HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written into the location specified on the
address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
Logic Block Diagram
Pin Configuration
Top View
SOIC
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
I/O
1
I/O
2
GN
G
GND
g
gnc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
CE
2
WE
A13
A8
A9
A11
OE
A10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
INPUT BUFFER
A0
A1
A2
A3
A4
A5
A6
A7
A8
I/O 0
I/O 1
ROW DECODER
SENSE AMPS
I/O 2
I/O 3
I/O 4
I/O 5
128K x 8
ARRAY
CE1
CE2
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O 6
I/O 7
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
Cypress Semiconductor Corporation
Document #: 001-06498 Rev. *A
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised August 3, 2006
[+] Feedback
CY62128BN
MoBL
®
Product Portfolio
Power Dissipation
V
CC
Range (V)
Product
CY62128BNLL Commercial
Industrial
Automotive-A
Automotive-E
Min.
4.5
Typ.
[2]
Max.
5.5
Speed
(ns)
55
70
55
70
70
70
Operating, I
CC
(mA) Standby, I
SB2
(µA)
Typ.
[2]
7.5
6
7.5
6
6
6
Max.
20
15
20
15
15
25
Typ.
[2]
2.5
2.5
2.5
2.5
2.5
2.5
Max.
15
15
15
15
15
25
5.0
Pin Configurations
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
STSOP
Top View
(not to scale)
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP I
Top View
(not to scale)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
Pin Definitions
Input
Input/Output
Input/Control
Input/Control
Input/Control
Input/Control
Ground
A
0
–A
16
. Address Inputs
I/O
0
–I/O
7
. Data lines. Used as input or output lines depending on operation
WE.
Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is
conducted.
CE
1
. Chip Enable 1, Active LOW.
CE
2
. Chip Enable 2, Active HIGH.
OE.
Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins
GND.
Ground for the device
Power Supply
V
CC
. Power supply for the device
Note:
2. Typical values are included for reference only and are not tested or guaranteed. Typical values are an average of the distribution across normal production
variations as measured at V
CC
= 5.0V, T
A
= 25°C, and t
AA
= 70 ns.
Document #: 001-06498 Rev. *A
Page 2 of 12
[+] Feedback
CY62128BN
MoBL
®
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Automotive-A
Automotive-E
Ambient
Temperature (T
A
)
[4]
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
V
CC
5V
±
10%
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input
Voltage
[3]
.................................–0.5V
to V
CC
+ 0.5V
Current into Outputs (LOW) .........................................20 mA
Electrical Characteristics
Over the Operating Range
-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
Description
Output HIGH
Voltage
Input HIGH Voltage
Input LOW Voltage
[3]
Input Leakage
Current
GND
≤
V
I
≤
V
CC
Commercial/
Industrial
Automotive-A
Automotive-E
I
OZ
Output Leakage
Current
GND
≤
V
I
≤
V
CC
,
Output Disabled
Commercial/
Industrial
Automotive-A
Automotive-E
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Commercial/
Industrial
Automotive-A
Automotive-E
I
SB1
Automatic CE
Max. V
CC
, CE
1
≥
V
IH
Commercial/
Power-down Current or CE
2
< V
IL
,
Industrial
—TTL Inputs
V
IN
≥
V
IH
or
Automotive-A
V
IN
≤
V
IL
, f = f
MAX
Automotive-E
Automatic CE
Max. V
CC
,
Power-down Current CE
1
≥
V
CC
– 0.3V,
or CE
2
≤
0.3V,
—CMOS Inputs
V
IN
≥
V
CC
– 0.3V,
or V
IN
≤
0.3V, f = 0
Commercial/
Industrial
Automotive-A
Automotive-E
0.1
2
7.5
20
–1
+1
Test Conditions
V
CC
= Min., I
OH
= –1.0 mA
Min.
2.4
0.4
2.2
–0.3
–1
V
CC
+ 0.3
0.8
+1
2.2
–0.3
–1
–1
–10
–1
–1
–10
6
6
6
0.1
0.1
0.1
2.5
15
2.5
2.5
2.5
Typ.
[2]
Max.
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
+10
+1
+1
+10
15
15
25
1
1
2
15
15
25
-70
Typ.
[2]
Max.
Unit
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
µA
µA
µA
Output LOW Voltage V
CC
= Min., I
OL
= 2.1 mA
I
SB2
Notes:
3. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
4. T
A
is the “Instant On” case temperature.
Document #: 001-06498 Rev. *A
Page 3 of 12
[+] Feedback
CY62128BN
MoBL
®
Capacitance
[5]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
9
9
Unit
pF
pF
Thermal Resistance
[5]
Parameter
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
32 SOIC
66.17
30.87
32 STSOP
105.14
14.09
32 TSOP
97.44
26.05
Unit
°C/W
°C/W
Θ
JA
Θ
JC
AC Test Loads and Waveforms
5V
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
(a)
R2
990Ω
R1 1800Ω
R1 1800Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R2
990Ω
GND
Rise TIme:
1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
639Ω
1.77V
OUTPUT
V
CC
ALL INPUT PULSES
90%
10%
90%
10%
Fall TIme:
1 V/ns
Data Retention Waveform
DATA RETENTION MODE
V
DR
> 2V
V
CC
CE
1
V
CC
, min.
t
CDR
V
CC
, min.
t
R
or
CE
2
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= V
DR
= 2.0V,
CE
1
≥
V
CC
– 0.3V, or CE
2
≤
0.3V,
V
IN
≥
V
CC
– 0.3V or, V
IN
≤
0.3V
Commercial/
Industrial
Automotive-A
Automotive-E
t
CDR
t
R
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
70
Conditions
[6]
Min.
2.0
1.5
15
Typ.
Max.
Unit
V
µA
1.5
25
µA
ns
ns
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
CC
+ 0.5V.
Document #: 001-06498 Rev. *A
Page 4 of 12
[+] Feedback
CY62128BN
MoBL
®
Switching Characteristics
[7]
Over the Operating Range
CY62128BN-55
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
1
LOW to Data Valid, CE
2
HIGH to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
[7, 9]
CE
1
LOW to Low Z, CE
2
HIGH to Low Z
[9]
CE
1
HIGH to High Z, CE
2
LOW to High Z
[8, 9]
CE
1
LOW to Power-up, CE
2
HIGH to Power-up
CE
1
HIGH to Power-down, CE
2
LOW to Power-down
Write Cycle Time
CE
1
LOW to Write End, CE
2
HIGH to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE HIGH to Low Z
[9]
WE LOW to High Z
[8, 9]
55
45
45
0
0
45
25
0
5
20
0
55
70
60
60
0
0
50
30
0
5
25
5
20
0
70
0
20
5
25
5
55
20
0
25
55
55
5
70
35
70
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
CY62128BN-70
Min.
Max.
Unit
WRITE CYCLE
[10]
Switching Waveforms
Read Cycle No.1
[11, 12]
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Notes:
7. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 100-pF load capacitance.
8. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured
±500
mV from steady-state voltage.
9. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
10. The internal write time of the memory is defined by the overlap of CE
1
LOW, CE
2
HIGH, and WE LOW. CE
1
and WE must be LOW and CE
2
HIGH to initiate a
write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the
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