PD-91279E
IRF3205
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 55V
R
DS(on)
= 8.0mΩ
G
S
I
D
= 110A
Description
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
110
80
390
200
1.3
± 20
62
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
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1
01/25/01
IRF3205
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
55
–––
–––
2.0
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
8.0
mΩ V
GS
= 10V, I
D
= 62A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 62A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
146
I
D
= 62A
35
nC V
DS
= 44V
54
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 62A
ns
–––
R
G
= 4.5Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3247 –––
V
GS
= 0V
781 –––
V
DS
= 25V
211 –––
pF
ƒ = 1.0MHz, See Fig. 5
1050 264 mJ I
AS
= 62A, L = 138µH
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
101
50
65
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
110
––– –––
showing the
A
G
integral reverse
––– ––– 390
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
––– 69 104
ns
T
J
= 25°C, I
F
= 62A
––– 143 215
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 138µH
R
G
= 25Ω, I
AS
= 62A. (See Figure 12)
Pulse width
≤
400µs; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
I
SD
≤
62A, di/dt
≤
207A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C.
2
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IRF3205
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
10
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
2.5
I
D
= 107A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
2.0
100
1.5
1.0
10
0.5
1
4
6
8
V DS = 25V
20µs PULSE WIDTH
10
12
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF3205
6000
V
GS
, Gate-to-Source Voltage (V)
5000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
16
14
12
10
8
6
4
2
0
I
D
=
62A
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
C, Capacitance(pF)
4000
Ciss
3000
2000
Coss
1000
Crss
0
1
10
100
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
I
D
, Drain Current (A)
100
1000
10us
10
100
100us
T
J
= 25
°
C
1
10
1ms
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
1
T
C
= 25 ° C
T
J
= 175 °C
Single Pulse
10
10ms
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
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IRF3205
R
D
120
V
DS
LIMITED BY PACKAGE
100
V
GS
R
G
D.U.T.
+
V
DD
I
D
, Drain Current (A)
-
80
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
60
Fig 10a.
Switching Time Test Circuit
40
V
DS
20
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1
Fig 10b.
Switching Time Waveforms
Thermal Response(Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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