UNISONIC TECHNOLOGIES CO., LTD
BTB308A
8A TRIACS
DESCRIPTION
1
TO-220
1
TO-263
The UTC
BTB308A
is a 8A triacs which can be operated in 3
quadrants only, it uses UTC’s advanced technology to provide
customers with high commutation performances.
The UTC
BTB308A
is suitable for inductive load switching
operations, also can be used in ON/OFF function applications such
as induction motor starting circuits, heating regulation, static relays
etc.
TRIAC
1
SYMBOL
MT2
DFN5060-8
G
MT1
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
1
2
3
G
G
G
4
-
5
-
6
-
7
-
8
-
MT1 MT2
MT1 MT2
MT1 MT2
Packing
Tube
BTB308AL-x-xx-TA3-T
BTB308AL-x-xx-TQ2-T
BTB308AG-x-xx-TA3-T
BTB308AG-x-xx-TQ2-T
TO-220
TO-263
TO-263
-
-
G
-
-
-
-
-
-
-
-
BTB308AL-x-xx-TQ2-R BTB308AG-x-xx-TQ2-R
Tube
Tape
Reel
BTB308AG-x-xx-K08-5060-R BTB308AG-x-xx-K08-5060-R
DFN5060-8 MT1 MT1 MT1
MT2 MT2 MT2 MT2 Tape Reel
Note: Pin Assignment: MT1: MT1
BTB308AG-x-xx-TA3-T
MT2: MT2
G: Gate
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TQ2: TO-263, K08-5060: DFN5060-8
(3) refer to SENSITIVITY AND TYPE
(4) 6: 600V, 8: 800V
(5) G: Halogen Free and Lead Free, L: Lead Free
(1)Packing Type
(2)Package Type
(3)Sensitivity and type
(4)Voltage
(5)Green Package
SENSITIVITY AND TYPE
PART NUMBER
VOLTAGE
600V
◎
◎
◎
◎
800V
◎
◎
◎
◎
SENSITIVITY
50mA
35mA
10mA
5mA
TYPE
SNUBBERLESS
SNUBBERLESS
LOGIC LEVEL
LOGIC LEVEL
BW
CW
SW
TW
◎:
Available
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
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QW-R401-059.H
BTB308A
MARKING
TO-220 / TO-263
UTC
BTB308A
Lot Code
1
L: Lead Free
G: Halogen Free
Date Code
TRIAC
DFN5060-8
UTC
308A
Lot Code
Date Code
BTB
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QW-R401-059.H
BTB308A
ABSOLUTE MAXIMUM RATINGS
T
C
=100°C
F=50Hz
t=20ms
SYMBOL
I
T(RMS)
I
TSM
2
TRIAC
PARAMETER
RMS On-State Current (Full Sine Wave)
Non Repetitive Surge Peak On-State
Current (Full Cycle T
J
initial=25°C)
2
RATINGS
8
80
84
36
UNIT
A
A
A
2
As
A/µs
A
W
°C
°C
I t Value for Fusing
It
Critical Rate of Rise of On-State Current:
F=120Hz T
J
=125°C
dI/dt
50
I
G
=2xI
GT
, tr≤100ns
Peak Gate Current
t
P
=20µs T
J
=125°C
I
GM
4
Average Gate Power Dissipation
T
J
=125°C
P
G(AV)
1
Operating Junction Temperature
T
J
-40~+125
Storage Junction Temperature
T
STG
-40~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
F=60Hz t=16.7ms
t
P
=10ms
THERMAL RESISTANCES
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
60
75 (Note)
1.6
4 (Note)
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220/TO-263
DFN5060-8
TO-220/TO-263
Junction to Case (AC)
DFN5060-8
Note: Surface Mounted on 1"x1" FR4 board.
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
FOR SNUBBERLESS AND LOGIC LEVEL (3 QUADRANTS)
TW
SW
CW
BW
TEST
PARAMETER SYMBOL
UNIT
CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gate Trigger
I
GT
I-II-III
5
10
35
50 mA
Current (Note 1)
V
D
=12V
R
L
=30Ω
Gate Trigger
V
GT
I-II-III
1.3
1.3
1.3
1.3
V
Voltage
V
D
=V
DRM
,
Gate Non-Trigger
V
GD
R
L
=3.3kΩ, I-II-III 0.2
0.2
0.2
0.2
V
Voltage
T
J
=125°C
Holding Current
I
H
I
T
=100mA
10
15
35
50 mA
(Note 2)
I-III
10
25
50
70 mA
Latching Current
I
L
I
G
=1.2I
GT
II
15
30
60
80 mA
Critical Rate of
V
D
=67%V
DRM
,
Rise of Off-State
dV/dt Gate Open,
20
40
400
1000
V/µs
Voltage(Note 2)
T
J
=125°C
Critical Rate of
Rise of Off-State
Voltage at
Commutation
(Note 2)
(dV/dt)c=0.1V/µs,
3.5
T
J
=125°C
(dI/dt)c (dV/dt)c=10V/µs,
T
J
=125°C
1.5
5.4
A/ms
2.98
4.5
7
A/ms
A/ms
Without Snubber
T
J
= 125°C
Notes: 1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of MT2 referenced to MT1.
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QW-R401-059.H
BTB308A
STATIC CHARACTERISTICS
MIN
SYMBOL
TEST CONDITIONS
V
TM
I
TM
=11A, t
p
=380μs
T
J
=25°C
V
TO
T
J
=125°C
R
D
T
J
=125°C
I
DRM
T
J
=25°C
Repetitive Peak Off-State Current
V
DRM
=V
RRM
I
RRM
T
J
=125°C
Note: 1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of MT2 referenced to MT1.
PARAMETER
Peak On-State Voltage (Note 1)
Threshold Voltage (Note 2)
Dynamic Resistance (Note 2)
TRIAC
TYP MAX UNIT
1.55
V
0.85
V
50
mΩ
5
μA
1
mA
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QW-R401-059.H
BTB308A
TYPICAL CHARACTERISTICS
Power Dissipation vs. RMS On-State
Current
TRIAC
12
10
RMS On-State Current
vs. Junction Temperature
Maximum power dissipation, P
D
(W)
10
8
6
4
2
0
0
2
4
6
8
10
RMS On-State Current, I
T(RMS)
(A)
Non-repetitive surge peak on-state
current vs. Pulse With Width
RMS On-State Current, I
T(RMS)
(A)
8
6
4
2
0
25
50
75
100 125 150 175
Junction Temperature,
T
J
(°C)
RMS On-State Current vs. Pulse
Duration
1000
25
RMS On-State Current, I
T(RMS)
(A)
Non-repetitive surge peak
on-state current, I
TSM
(A)
20
15
10
5
0
0.01
100
di/dt limit
I
T
I
TSM
time
10
0.01
T
J
initial=25°C max
0.1
1
10
100
Pulse With Width, tp (ms)
10
100
1000
Pulse Duration, t
s
(s)
2.5
Normalised Gate Trigger Current
vs.
Junction Temperature
T2+G+
T2+G-
T2-G-
25
On-State
Current vs.
On-State
Voltage
T
J
=125°C
T
J
=25°C
Normalised Gate Trigger Current,
I
GT
(T
J
) / I
GT
(25°C)
On-State
Current, I
T
(A)
2.0
1.5
1.0
0.5
0
20
15
10
5
0
T
J
Max.
V
TO
=0.85V
R
D
=50mΩ
-50 -25
0
25
50
75 100 125
0.5
Junction Temperature,
T
J
(°C)
0.7
1.0
1.2
1.5 1.7
5
On-State Voltage,
V
TM
(V)
5
5
2.0
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QW-R401-059.H
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